L. Agazzi

TL;DR: Erbium-doped aluminum oxide integrated optical amplifiers were fabricated on silicon substrates, and their characteristics were investigated for Er concentrations ranging from 0.27 to 4.2×1020 cm−3.

TL;DR: This work reports the realization and performance of a distributed feedback channel waveguide laser in erbium-doped aluminum oxide on a standard thermally oxidized silicon substrate and the diode-pumped continuous-wave laser, which demonstrated a threshold of 2.2 mW absorbed pump power and a maximum output power of more than 3 mW.

TL;DR: The straightforward wafer-scale fabrication process, which includes reactive co-sputtering and subsequent reactive ion etching, allows for parallel integration of multiple amplifier and laser sections with silicon or other photonic circuits on a chip.

TL;DR: In this paper, the influence of energy migration and energy-transfer upconversion (ETU) among neighboring Er3+ ions on luminescence decay and steady-state population densities in Al2O3:Er3+ thin films is investigated by means of photolumine decay measurements under quasi-CW excitation.

TL;DR: Integrated Al(2)O(3):Er(3+) channel waveguide ring lasers were realized on thermally oxidized silicon substrates and wavelength selection in the range 1530-1557 nm was demonstrated by varying the length of the output coupler from the ring.