L. B. Abdalla

TL;DR: In this paper, the authors focus on the possibility of converting a normal insulator into a topological one by application of an external electric field that shifts different bands by different energies and induces a specific band inversion.

TL;DR: This work predicts a continuous transition from the normal insulator to a topological insulator and eventually to a metal as a function of F⊥ on few-layer phosphorene, and opens the possibility of converting normal insulators into topological ones via electric field and making a multifunctional "field effect topological transistor" that could manipulate simultaneously both spin and charge carrier.

TL;DR: In this article, a map of the energetic stability and the electronic behavior of the topologically protected surface states of topological insulator (TI), Bi{}_{2}$Se${}_{3}$, doped with transition metals (TMs), was provided.

TL;DR: In this article, the authors identify the topological band inversion (TIB) of oxide topological insulators (TIs) and trace the basic design principles necessary to identify the window of opportunity of stable TIs.

TL;DR: In this article, the authors trace the principles needed to design stable oxide topological insulators at ambient pressures as a) a search for oxides with small inversion energies; b) design of large inversion-energy oxide TIs that can be stabilized by pressure; and c) search for covalent oxides where TI-removing atomic displacements can be effectively screened out.