Showing papers in "arXiv: Materials Science in 2014"

Weyl semimetal phase in non-centrosymmetric transition metal monophosphides

Abstract: Based on first principle calculations, we show that a family of nonmagnetic materials including TaAs, TaP, NbAs and NbP are Weyl semimetal (WSM) without inversion center. We find twelve pairs of Weyl points in the whole Brillouin zone (BZ) for each of them. In the absence of spin-orbit coupling (SOC), band inversions in mirror invariant planes lead to gapless nodal rings in the energy-momentum dispersion. The strong SOC in these materials then opens full gaps in the mirror planes, generating nonzero mirror Chern numbers and Weyl points off the mirror planes. The resulting surface state Fermi arc structures on both (001) and (100) surfaces are also obtained and show interesting shapes, pointing to fascinating playgrounds for future experimental studies.

Graphene Plasmonics for Terahertz to Mid-Infrared Applications

Abstract: In recent years, we have seen a rapid progress in the field of graphene plasmonics, motivated by graphene's unique electrical and optical properties, tunabilty, long-lived collective excitation and their extreme light confinement. Here, we review the basic properties of graphene plasmons; their energy dispersion, localization and propagation, plasmon-phonon hybridization, lifetimes and damping pathways. The application space of graphene plasmonics lies in the technologically significant, but relatively unexploited terahertz to mid-infrared regime. We discuss emerging and potential applications, such as modulators, notch filters, polarizers, mid-infrared photodetectors, mid-infrared vibrational spectroscopy, among many others.

Semiconducting Black Phosphorus: Synthesis, Transport Properties and Electronic Applications

Abstract: Phosphorus is one of the most abundant elements preserved in earth, constructing with a fraction of ~0.1% of the earth crust. In general, phosphorus has several allotropes. The two most commonly seen allotropes, white and red phosphorus, are widely used in explosives and safety matches. In addition, black phosphorus, though rarely mentioned, is a layered semiconductor and have great potentials in optical and electronic applications. Remarkably, this layered material can be reduced to one single atomic layer in the vertical direction owing to the van der Waals structure, known as phosphorene, where the physical properties can be tremendously different from its bulk counterpart. In this review article, we trace back to the 100 years research history on black phosphorus from the synthesis to material properties, and extend the topic from black phosphorus to phosphorene. The physical and transport properties are highlighted, aiming at further applications in electronic and optoelectronics devices.

Dirac materials

Abstract: A wide range of materials, like d-wave superconductors, graphene, and topological insulators, share a fundamental similarity: their low-energy fermionic excitations behave as massless Dirac particles rather than fermions obeying the usual Schrodinger Hamiltonian This emergent behavior of Dirac fermions in condensed matter systems defines the unifying framework for a class of materials we call "Dirac materials'' In order to establish this class of materials, we illustrate how Dirac fermions emerge in multiple entirely different condensed matter systems and we discuss how Dirac fermions have been identified experimentally using electron spectroscopy techniques (angle-resolved photoemission spectroscopy and scanning tunneling spectroscopy) As a consequence of their common low-energy excitations, this diverse set of materials shares a significant number of universal properties in the low-energy (infrared) limit We review these common properties including nodal points in the excitation spectrum, density of states, specific heat, transport, thermodynamic properties, impurity resonances, and magnetic field responses, as well as discuss many-body interaction effects We further review how the emergence of Dirac excitations is controlled by specific symmetries of the material, such as time-reversal, gauge, and spin-orbit symmetries, and how by breaking these symmetries a finite Dirac mass is generated We give examples of how the interaction of Dirac fermions with their distinct real material background leads to rich novel physics with common fingerprints such as the suppression of back scattering and impurity-induced resonant states

Environmental instability of few-layer black phosphorus

Abstract: We study the environmental instability of mechanically exfoliated few-layer black phosphorus (BP). From continuous measurements of flake topography over several days, we observe an increase of over 200% in volume due to the condensation of moisture from air. We find that long term exposure to ambient conditions results in a layer-by-layer etching process of BP flakes. Interestingly, flakes can be etched down to single layer (phosphorene) thicknesses. BP's strong affinity for water greatly modifies the performance of fabricated field-effect transistors (FETs) measured in ambient conditions. Upon exposure to air, we differentiate between two timescales for doping of BP FET transfer characterisitcs: a short timescale (minutes) in which a shift in the threshold voltage occurs due to physisorbed oxygen and nitrogen, and a long timescale (hours) in which p-type doping occurs from water absorption. Continuous measurements of BP FETs in air reveal eventual degradation and break-down of the channel material after several days due to the layer-by-layer etching process.

A black phosphorus photo-detector for multispectral, high-resolution imaging

Abstract: Black phosphorus is a layered semiconductor that is intensely researched in view of applications in optoelectronics. In this Letter, we investigate a multi-layer black phosphorus photo-detector that is capable of acquiring high-contrast (V>0.9) images both in the visible ({\lambda}_{VIS}=532nm) as well as in the infrared ({\lambda}_{IR}=1550nm) spectral regime. In a first step, by using photocurrent microscopy, we map the active area of the device and we characterize responsivity and gain. In a second step, by deploying the black phosphorus device as a point-like detector in a confocal microsope setup, we acquire diffraction-limited optical images with sub-micron resolution. The results demonstrate the usefulness of black phosphorus as an optoelectronic material for hyperspectral imaging applications.

van der Waals forces in density functional theory: The vdW-DF method

Abstract: A density functional theory (DFT) that accounts for van der Waals (vdW) interactions in condensed matter, materials physics, chemistry, and biology is reviewed. The insights that led to the construction of the Rutgers-Chalmers van der Waals Density Functional (vdW-DF) are presented with the aim of giving a historical perspective, while also emphasising more recent efforts which have sought to improve its accuracy. In addition to technical details, we discuss a range of recent applications that illustrate the necessity of including dispersion interactions in DFT. This review highlights the value of the vdW-DF method as a general-purpose method, not only for dispersion bound systems, but also in densely packed systems where these types of interactions are traditionally thought to be negligible.

Two dimensional semiconductors with possible high room temperature mobility

Abstract: We calculated the longitudinal acoustic phonon limited electron mobility of 14 two dimensional semiconductors with composition of MX$_2$, where M (= Mo, W, Sn, Hf, Zr and Pt) is the transition metal, and X is S, Se and Te. We treated the scattering matrix by deformation potential approximation. We found that out of the 14 compounds, MoTe$_2$, HfSe$_2$ and HfTe$_2$, are promising regarding to the possible high mobility and finite band gap. The phonon limited mobility can be above 2500 cm$^2$V$^{-1}$s$^{-1}$ at room temperature.

Strong Oxidation Resistance of Atomically Thin Boron Nitride Nanosheets

Abstract: Investigation on oxidation resistance of two-dimensional (2D) materials is critical for many of their applications, because 2D materials could have higher oxidation kinetics than their bulk counterparts due to predominant surface atoms and structural distortions. In this study, the oxidation behavior of high-quality boron nitride (BN) nanosheets of 1-4 layer thick has been examined by heating in air. Atomic force microscopy and Raman spectroscopy analyses reveal that monolayer BN nanosheets can sustain up to 850 °C and the starting temperature of oxygen doping/oxidation of BN nanosheets only slightly increases with the increase of nanosheet layer and depends on heating conditions. Elongated etch lines are found on the oxidized monolayer BN nanosheets, suggesting that the BN nanosheets are first cut along the chemisorbed oxygen chains and then the oxidative etching grows perpendicularly to these cut lines. The stronger oxidation resistance of BN nanosheets suggests that they are more preferable for high-temperature applications than graphene.

Plasma-assisted fabrication of monolayer phosphorene and its Raman characterization

Abstract: There have been continuous efforts to seek for novel functional two-dimensional semiconductors with high performance for future applications in nanoelectronics and optoelectronics. In this work, we introduce a successful experimental approach to fabricate monolayer phosphorene by mechanical cleavage and the following Ar+ plasma thinning process. The thickness of phosphorene is unambiguously determined by optical contrast combined with atomic force microscope (AFM). Raman spectroscopy is used to characterize the pristine and plasma-treated samples. The Raman frequency of A2g mode stiffens, and the intensity ratio of A2g to A1g modes shows monotonic discrete increase with the decrease of phosphorene thickness down to monolayer. All those phenomena can be used to identify the thickness of this novel two-dimensional semiconductor efficiently. This work for monolayer phosphorene fabrication and thickness determination will facilitates the research of phosphorene.

A Hydrazone-based Covalent Organic Framework for Photocatalytic Hydrogen Production

Abstract: Covalent organic frameworks (COFs) have recently emerged as a new generation of porous polymers combining molecular functionality with the robustness and structural definition of crystalline solids. Drawing on the recent development of tailor-made semiconducting COFs, we here report on a new COF capable of visible-light driven hydrogen generation. The COF is based on hydrazone-linked functionalized triazine and phenyl building blocks and adopts a layered structure with a honeycomb-type lattice featuring mesopores of 3.8 nm and the highest surface area among all hydrazone-based COFs reported to date. When illuminated with visible light, the COF continuously produces hydrogen from water without signs of degradation. With their precise molecular organization and modular structure combined with high porosity, photoactive COFs represent well-defined model systems to study and adjust the molecular entities central to the photocatalyic process.

Elastic Properties of Chemical-Vapor-Deposited Monolayer MoS2, WS2, and Their Bilayer Heterostructures

Abstract: Elastic properties of materials are an important factor in their integration in applications. Chemical vapor deposited (CVD) monolayer semiconductors are proposed as key components in industrial-scale flexible devices and building blocks of 2D van der Waals heterostructures. However, their mechanical and elastic properties have not been fully characterized. Here we report high 2D elastic moduli of CVD monolayer MoS2 and WS2 (~ 170 N/m), which is very close to the value of exfoliated MoS2 monolayers and almost half the value of the strongest material, graphene. The 2D moduli of their bilayer heterostructures are lower than the sum of 2D modulus of each layer, but comparable to the corresponding bilayer homostructure, implying similar interactions between the hetero monolayers as between homo monolayers. These results not only provide deep insight to understanding interlayer interactions in 2D van der Waals structures, but also potentially allow engineering of their elastic properties as desired.

Direct imaging of the band profile in single layer ${\small MoS_2}$ on graphite: quasiparticle energy gap, metallic edge states and edge band bending

Abstract: Using Scanning Tunneling Microscopy and Spectroscopy, we probe the electronic structures of single layer ${\small MoS_2}$ on graphite. We show that the quasiparticle energy gap of single layer ${\small MoS_2}$ is 2.15 $\pm$ 0.07 eV at 77 K. Combining with temperature dependent photoluminescence studies, we deduce an exciton binding energy of 0.22 $\pm$ 0.1 eV, a value that is much lower than current theoretical predictions. Consistent with theoretical predictions we directly observed metallic edge states of single layer ${\small MoS_2}$. In the bulk region of ${\small MoS_2}$, the Fermi level is located at 1.8 eV above the valence band maximum, possibly due to the formation of a graphite/${\small MoS_2}$ heterojunction. At the edge, however, we observe an upward band bending of 0.6 eV within a short depletion length of about 5 nm, analogous to the phenomena of Fermi level pinning of a 3D semiconductor by metallic surface states.

Device Perspective for Black Phosphorus Field-Effect Transistors: Contact Resistance, Ambipolar and Scaling

Abstract: Although monolayer black phosphorus (BP) or phosphorene has been successfully exfoliated and its optical properties have been explored, most of electrical performance of the devices is demonstrated on few-layer phosphorene and ultra-thin BP films. In this paper, we study the channel length scaling of ultra-thin BP field-effect transistors (FETs), and discuss a scheme for using various contact metals to change transistor characteristics. Through studying transistor behaviors with various channel lengths, the contact resistance can be extracted from the transfer length method (TLM). With different contact metals, we find out that the metal/BP interface has different Schottky barrier heights, leading to a significant difference in contact resistance, which is quite different from previous studies of transition metal dichalcogenides (TMDs) such as MoS2 where Fermi-level is strongly pinned near conduction band edge at metal/MoS2 interface. The nature of BP transistors are Schottky barrier FETs, where the on and off states are controlled by tuning the Schottky barriers at the two contacts. We also observe the ambipolar characteristics of BP transistors with enhanced n-type drain current and demonstrate that the p-type carriers can be easily shifted to n-type or vice versus by controlling the gate bias and drain bias, showing the potential to realize BP CMOS logic circuits.

Electric Field Induced Topological Phase Transition in Two-Dimensional Few-layer Black Phosphorus

Abstract: Phosphorene is a novel two-dimensional material that can be isolated through mechanical exfoliation from layered black phosphorus, but unlike graphene and silicene, monolayer phosphorene has a large band gap. It was thus unsuspected to exhibit band inversion and the ensuing topological insulator behavior. It has recently attracted interest because of its proposed application as field effect transistors. Using first-principles calculations with applied perpendicular electric field F we predict a continuous transition from the normal insulator to a topological insulator and eventually to a metal as a function of F. The continuous tuning of topological behavior with electric field would lead to spin-separated, gapless edge states, i.e., quantum spins Hall effect. This finding opens the possibility of converting normal insulating materials into topological ones via electric field, and making a multi-functional field effect topological transistor that could manipulate simultaneously both spins and charge carrier.

Applications of exchange coupled bi-magnetic hard/soft and soft/hard magnetic core/shell nanoparticles

Abstract: The applications of exchange coupled bi-magnetic hard/soft and soft/hard ferromagnetic core/shell nanoparticles are reviewed. After a brief description of the main synthesis approaches and the core/shell structural-morphological characterization, the basic static and dynamic magnetic properties are presented. Five different types of perspective applications, based on diverse patents and research articles, are described: permanent magnets, recording media, microwave absorption, biomedical applications and other applications. Both the advantages of the core/shell morphology and some of the remaining challenges are discussed.

Strain Engineering for Phosphorene: The Potential Application as a Photocatalyst

Abstract: Phosphorene has been attracted intense interest due to its unexpected high carrier mobility and distinguished anisotropic optoelectronic and electronic properties. In this work, we unraveled strain engineered phosphorene as a photocatalyst in the application of water splitting hydrogen production based on density functional theory calculations. Lattice dynamic calculations demonstrated the stability for such kind of artificial materials under different strains. The phosphorene lattice is unstable under compression strains and could be crashed. Whereas, phosphorene lattice shows very good stability under tensile strains. Further guarantee of the stability of phosphorene in liquid water is studied by ab initio molecular dynamics simulations. Tunable band gap from 1.54 eV at ambient condition to 1.82 eV under tensile strains for phosphorene is evaluated using parameter-free hybrid functional calculations. Appropriate band gaps and band edge alignments at certain pH demonstrate the potential application of phosphorene as a sufficiently efficient photocatalyst for visible light water splitting. We found that the strained phosphorene exhibits significantly improved photocatalytic properties under visible-light irradiation by calculating optical absorption spectra. Negative splitting energy of absorbed H2O indicates the water splitting on phosphorene is energy favorable both without and with strains.

A lithium-ion battery based on a graphene nanoflakes ink anode and a lithium iron phosphate cathode

Abstract: Li-ion rechargeable batteries have enabled the wireless revolution transforming global communication. Future challenges, however, demands distributed energy supply at a level that is not feasible with the current energy-storage technology. New materials, capable of providing higher energy density are needed. Here we report a new class of lithium-ion batteries based on a graphene ink anode and a lithium iron phosphate cathode. By carefully balancing the cell composition and suppressing the initial irreversible capacity of the anode, we demonstrate an optimal battery performance in terms of specific capacity, i.e. 165 mAhg-1, estimated energy density of about 190 Whkg-1 and life, with a stable operation for over 80 charge-discharge cycles. We link these unique properties to the graphene nanoflake anode displaying crystalline order and high uptake of lithium at the edges, as well as to its structural and morphological optimization in relation to the overall battery composition. Our approach, compatible with any printing technologies, is cheap and scalable and opens up new opportunities for the development of high-capacity Li-ion batteries.

Magneto-ionic Control of Interfacial Magnetism

Abstract: In metal/oxide heterostructures, rich chemical, electronic, magnetic and mechanical properties can emerge from interfacial chemistry and structure. The possibility to dynamically control interface characteristics with an electric field paves the way towards voltage control of these properties in solid-state devices. Here we show that electrical switching of the interfacial oxidation state allows for voltage control of magnetic properties to an extent never before achieved through conventional magnetoelectric coupling mechanisms. We directly observe, for the first time, in situ voltage driven O$^{2-}$ migration in a Co/metal-oxide bilayer, which we use to toggle the interfacial magnetic anisotropy energy by >0.6 erg/cm$^2$. We exploit the thermally-activated nature of ion migration to dramatically increase the switching efficiency and to demonstrate reversible patterning of magnetic properties through local activation of ionic migration. These results suggest a path towards voltage-programmable materials based on solid-state switching of interface oxygen chemistry.

Experimental realizations of full control of reflected waves with subwavelength acoustic metasurfaces

Abstract: Metasurfaces with subwavelength thickness have exhibited unconventional phenomena in ways that could not be mimicked by traditional materials. Here we report the analytical design and experimental realizations of acoustic metasurface with hitherto inaccessible functionality of manipulating the reflected waves arbitrarily. By suitably designing the phase shift profile covering 2 range induced by labyrinthine units, the metasurface can reflect acoustic waves in an unusual yet controllable manner. Anomalous reflection and ultrathin planar lens with adjustable focal point were both demonstrated with carefully designed metasurfaces. Remarkably, the free manipulation of phase shifts offers great flexibility in the design of non-paraxial or paraxial acoustic self-accelerating beams with arbitrary trajectories. With the extraordinary wave-steering ability, the metasurface should open exciting possibilities for designing compact acoustic components with versatile potential and may find a variety of applications ranging from ultrasound imaging to field caustic engineering.

Digital Metamaterials

Abstract: Balancing the complexity and the simplicity has played an important role in the development of many fields in science and engineering As Albert Einstein was once quoted to say: 'Everything must be made as simple as possible, but not one bit simpler' The simplicity of an idea brings versatility of that idea into a broader domain, while its complexity describes the foundation upon which the idea stands One of the well-known and powerful examples of such balance is in the Boolean algebra and its impact on the birth of digital electronics and digital information age The simplicity of using only two numbers of '0' and '1' in describing an arbitrary quantity made the fields of digital electronics and digital signal processing powerful and ubiquitous Here, inspired by the simplicity of digital electrical systems we propose to apply an analogous idea to the field of metamaterials, namely, to develop the notion of digital metamaterials Specifically, we investigate how one can synthesize an electromagnetic metamaterial with desired materials parameters, eg, with a desired permittivity, using only two elemental materials, which we call 'metamaterial bits' with two distinct permittivity functions, as building blocks We demonstrate, analytically and numerically, how proper spatial mixtures of such metamaterial bits leads to 'metamaterial bytes' with material parameters different from the parameters of metamaterial bits We also explore the role of relative spatial orders of such digital materials bits in constructing different parameters for the digital material bytes We then apply this methodology to several design examples such as flat graded-index digital lens, cylindrical scatterers, digital constructs for epsilon-near-zero (ENZ) supercoupling, and digital hyperlens, highlighting the power and simplicity of this methodology and algorithm

Doping dependence of the Raman spectrum of defected graphene

Abstract: We investigate the evolution of the Raman spectrum of defected graphene as a function of doping. Polymer electrolyte gating allows us to move the Fermi level up to 0.7eV, as monitored by \textit{in-situ} Hall-effect measurements. For a given number of defects, we find that the intensities of the D and D' peaks decrease with increasing doping. We assign this to an increased total scattering rate of the photoexcited electrons and holes, due to the doping-dependent strength of electron-electron scattering. We present a general relation between D peak intensity and defects valid for any doping level

Efficient Interlayer Relaxation and Transition of Excitons in Epitaxial and Non-epitaxial MoS2/WS2 Heterostructures

Abstract: Semiconductor heterostructures provide a powerful platform for the engineering of excitons. Here we report the excitonic properties of two-dimensional (2D) heterostructures that consist of monolayer MoS2 and WS2 stacked epitaxially or non-epitaxially in the vertical direction. We find similarly efficient interlayer relaxation and transition of excitons in both the epitaxial and nonepitaxial heterostructures. This is manifested by a two orders of magnitude decrease in the photoluminescence and the appearance of an extra absorption peak at low energy region. The MoS2/WS2 heterostructures show weak interlayer coupling and can essentially act as atomicscale heterojunctions with the intrinsic bandstructures of the two monolayers largely preserved. They are particularly promising for the applications that request efficient dissociation of excitons and strong light absorption, including photovoltaics, solar fuels, photodetectors, and optical modulators. Our results also indicate that 2D heterostructures promise unprecedented capabilities to engineer excitons from the atomic level without concerns of interfacial imperfection.

Anisotropic Thermal Conductivity in Single Crystal beta-Gallium Oxide

Abstract: The thermal conductivities of beta-Ga2O3 single crystals along four different crystal directions were measured in the temperature range of 80-495K using the time domain thermoreflectance (TDTR) method. A large anisotropy was found. At room temperature, the [010] direction has the highest thermal conductivity of 27.0+/-2.0 W/mK, while that along the [100] direction has the lowest value of 10.9+/-1.0 W/mK. At high temperatures, the thermal conductivity follows a ~1/T relationship characteristic of Umklapp phonon scattering, indicating phonon-dominated heat transport in the \b{eta}-Ga2O3 crystal. The measured experimental thermal conductivity is supported by first-principles calculations which suggest that the anisotropy in thermal conductivity is due to the differences of the speed of sound along different crystal directions.

Experimental demonstration of hybrid improper ferroelectricity and presence of abundant charged walls in (Ca,Sr)$_{3}$Ti$_{2}$O$_{7}$ crystals

Abstract: Standing on successful first principles predictions for new functional ferroelectric materials, a number of new ferroelectrics have been experimentally discovered. Utilizing trilinear coupling of two types of octahedron rotations, hybrid improper ferroelectricity has been theoretically predicted in ordered perovskites and the Ruddlesden-Popper compounds (Ca$_{3}$Ti$_{2}$O$_{7}$, Ca$_{3}$Mn$_{2}$O$_{7}$, and (Ca/Sr/Ba)$_{3}$(Sn/Zr/Ge)$_{2}$O$_{7}$). However, the ferroelectricity of these compounds has never been experimentally confirmed and even their polar nature has been under debate. Here we provide the first experimental demonstration of room-temperature switchable polarization in the bulk crystals of Ca$_{3}$Ti$_{2}$O$_{7}$ as well as Sr-doped Ca$_{3}$Ti$_{2}$O$_{7}$. In addition, (Ca,Sr)$_{3}$Ti$_{2}$O$_{7}$ is found to exhibit an intriguing ferroelectric domain structure resulting from orthorhombic twins and (switchable) planar polarization. The planar domain structure accompanies abundant charged domain walls with conducting head-to-head and insulating tail-to-tail configurations, which exhibit two-order-of-magnitude conduction difference. These discoveries provide new research opportunities not only on new stable ferroelectrics of Ruddlesden-Popper compounds, but also on meandering conducting domain walls formed by planar polarization.

Ferroelectric Materials for Solar Energy Conversion: Photoferroics Revisited

Abstract: The application of ferroelectric materials (i.e. solids that exhibit spontaneous electric polarisation) in solar cells has a long and controversial history. This includes the first observations of the anomalous photovoltaic effect (APE) and the bulk photovoltaic effect (BPE). The recent successful application of inorganic and hybrid perovskite structured materials (e.g. BiFeO3, CsSnI3, CH3NH3PbI3) in solar cells emphasises that polar semiconductors can be used in conventional photovoltaic architectures. We review developments in this field, with a particular emphasis on the materials known to display the APE/BPE (e.g. ZnS, CdTe, SbSI), and the theoretical explanation. Critical analysis is complemented with first-principles calculation of the underlying electronic structure. In addition to discussing the implications of a ferroelectric absorber layer, and the solid state theory of polarisation (Berry phase analysis), design principles and opportunities for high-efficiency ferroelectric photovoltaics are presented.

Finding unprecedentedly low-thermal-conductivity half-Heusler semiconductors via high-throughput materials modeling

Abstract: The lattice thermal conductivity ({\kappa}{\omega}) is a key property for many potential applications of compounds. Discovery of materials with very low or high {\kappa}{\omega} remains an experimental challenge due to high costs and time-consuming synthesis procedures. High-throughput computational pre-screening is a valuable approach for significantly reducing the set of candidate compounds. In this article, we introduce efficient methods for reliably estimating the bulk {\kappa}{\omega} for a large number of compounds. The algorithms are based on a combination of machine-learning algorithms, physical insights, and automatic ab-initio calculations. We scanned approximately 79,000 half-Heusler entries in the AFLOWLIB.org database. Among the 450 mechanically stable ordered semiconductors identified, we find that {\kappa}{\omega} spans more than two orders of magnitude- a much larger range than that previously thought. {\kappa}{\omega} is lowest for compounds whose elements in equivalent positions have large atomic radii. We then perform a thorough screening of thermodynamical stability that allows to reduce the list to 77 systems. We can then provide a quantitative estimate of {\kappa}{\omega} for this selected range of systems. Three semiconductors having {\kappa}{\omega} < 5 W /(m K) are proposed for further experimental study.

Charge carrier mobility in hybrid halide perovskites

Abstract: The charge transport properties of hybrid halide perovskites are investigated with a combination of density functional theory including van der Waals interaction and the Boltzmann theory for diffusive transport in the relaxation time approximation. We find the mobility of electrons to be in the range 5-10 cm$^2$V$^{-1}$s$^{-1}$ and that for holes within 1-5 cm$^2$V$^{-1}$s$^{-1}$, where the variations depend on the crystal structure investigated and the level of doping. Such results, in good agreement with recent experiments, set the relaxation time to about 1 ps, which is the time-scale for the molecular rotation at room temperature. For the room temperature tetragonal phase we explore two possible orientations of the organic cations and find that the mobility has a significant asymmetry depending on the direction of the current with respect to the molecular axis. This is due mostly to the way the PbI$_3$ octahedral symmetry is broken. Interestingly we find that substituting I with Cl has minor effects on the mobilities. Our analysis suggests that the carrier mobility is probably not a key factor in determining the high solar-harvesting efficiency of this class of materials.

Tuning the Structural, Electronic, and Magnetic Properties of Germanene by the Adsorption of 3$d$ Transition Metal Atoms

Abstract: The structural, electronic, and magnetic properties of 3$d$ transition metal (TM) atoms (Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, and Zn) adsorbed germanene are addressed using density functional theory. Based on the adsorption energy, TM atoms prefer to occupy at the hollow site for all the cases. The obtained values of the total magnetic moment vary from 0.97 $\mu_B$ to 4.95 $\mu_B$ in case of Sc to Mn-adsorption, respectively. A gap of 74 meV with a strongly enhanced splitting of 67 meV is obtained in case of Sc-adsorption, whereas metallic states are obtained in case of Ti, Cr, Mn, Fe, and Co. Non-magnetic states are realized for Ni, Cu, and Zn-adsorption. Moreover, semiconducting nature is obtained for non-magnetic cases with a gap of 26 to 28 meV. Importantly, it is found that V-adsorbed germanene can host the quantum anomalous Hall effect. The obtained results demonstrate that TM atoms and nearest neighbour Ge atoms are ferro-magnetically ordered in the cases of V, Mn, Fe, Co, Ni, Cu, and Zn, while anti-ferromagnetic ordering is obtained for Sc, Ti, and Cr. In addition, the effects of the coverage of all TM atoms on the electronic structure and the ferro-magnetic and anti-ferro-magnetic coupling in case of Mn are examined. The results could help to understand the effect of TM atoms in a new class of two-dimensional materials beyond graphene and silicene.

Enhancement of Perpendicular Magnetic Anisotropy and Transmission of Spin-Hall-Effect-Induced Spin Currents by a Hf Spacer Layer in W/Hf/CoFeB/MgO Layer

Abstract: We report that strong perpendicular magnetic anisotropy of the ferromagnetic layer in a W/CoFeB/MgO multilayer structure can be established by inserting a Hf layer as thin as 0.25 nm between the W and CoFeB layers. The Hf spacer also allows transmission of spin currents generated by an in-plane charge current in the W layer to apply strong spin torque on the CoFeB, thereby enabling current-driven magnetic switching. The antidamping-like and field-like components of the spin torque exerted on a 1 nm CoFeB layer are of comparable magnitudes in this geometry. Both components originate from the spin Hall effect in the underlying W layer.