L. Gouskov

TL;DR: In this article, Be ions are implanted into Te−doped Ga0.96Al0.04Sb layers grown by liquid phase epitaxy and analyzed from secondary ion mass spectrometry profiles and found to be in good agreement with a computed simulation one.

TL;DR: In this article, the methode de fabrication and les proprietes photoelectriques de trois types de diodes fabriquees a partir de couches de Ga0,96Al 0,04Sb deposees par epitaxie en phase liquide sur substrat n + GaSb.

TL;DR: In this article, the liquid phase epitaxial growth of successive n- and p -Ga 0.96 Al 0.04 Sb layers is described, showing that the equivalent doping level of the resulting junction is much lower than the limiting values of the n and p-concentrations of individual homogeneous layers.

TL;DR: In this paper, the authors derived the lifetime of photodiodes in the space charge region around 10−8 s from these diode photoelectrical properties, showing that the high value of the charge width leads to an efficient redshift due to the electroabsorption.

TL;DR: In this article, a simple method for the determination of the layer resistance is proposed and the limits of its validity in the following conditions of conduction between the layer and the substrate: ohmic type, generation-recombinaison type.