Controlled growth of nanowires is an important, emerging research field with many applications in, for example, electronics, photonics, and life sciences. Nanowires of zinc blende crystal structure, grown in the 〈111〉B direction, which is the favoured direction of growth, usually have a large number of twin-plane defects. Such defects limit the performance of optoelectronic nanowire-based devices. To investigate this defect formation, we examine GaP nanowires grown by metal-organic vapour-phase epitaxy. We show that the nanowire segments between the twin planes are of octahedral shape and are terminated by {111} facets, resulting in a microfaceting of the nanowires. We discuss these findings in a nucleation context, where we present an idea on how the twin planes form. This investigation contributes to the understanding of defect formation in nanowires. One future prospect of such knowledge is to determine strategies on how to control the crystallinity of nanowires.

Structural properties of 〈111〉B -oriented III–V nanowires

A mechanism for twin formation during Czochralski and encapsulated vertical Bridgman growth of III V compound semiconductors

The effects of lamellar twinning in epitaxial particle-assisted GaAs B nanowires are investigated in an extensive high resolution electron microscopy (HRTEM) study of the low index zones , , and . As these directions are non-parallel to the (-1-1-1) twin planes we find that the twin segments exhibit two different zone axes as a consequence of twinning. In the first three cases the alternative zones were found to be and . These findings are supported by a comparison of experimental HRTEM images and multi-slice simulations along with fast Fourier transform mapping. From the appearance of non-overlapping regions we conclude that the nanowires are bound by {111} facets only. The twin formation and the development of the stable side facets are discussed (Less)

https://iopscience.iop.org/article/10.1088/0957-4484/18/48/485717/pdf

Understanding the 3D structure of GaAs nanowires

Facetting during directional growth of oxides from the melt: coupling between thermal fields, kinetics and melt/crystal interface shapes

L.J. Chen

Papers

Study of twins in GaAs, GaP and InAs crystals

Characteristics of facets in Si-doped GaAs crystals grown by horizontal Bridgman technique

Formation of surface inversion layer in F + -implanted n-type silicon

The growth and characterization of GaAs single crystal by a modified horizontal bridgman system

Simulation of the growth rate and layer thickness for liquid phase epitaxy (LPE) under slider-induced convection