Industrial Technology Research Institute

About: Industrial Technology Research Institute is a facility organization based out in San Jose, California, United States. It is known for research contribution in the topics: Layer (electronics) & Signal. The organization has 32552 authors who have published 24401 publications receiving 347494 citations. The organization is also known as: Gongye Jishu Yanjiuyuan & Industrial Technology Research Institute of Taiwan, R.O.C.

Nanostructured High-Entropy Alloys with Multiple Principal Elements: Novel Alloy Design Concepts and Outcomes

Abstract: A new approach for the design of alloys is presented in this study. These high-entropy alloys with multi-principal elements were synthesized using well-developed processing technologies. Preliminary results demonstrate examples of the alloys with simple crystal structures, nanostructures, and promising mechanical properties. This approach may be opening a new era in materials science and engineering.

Prepare dispersed CIS nano-scale particles and spray coating CIS absorber layers using nano-scale precursors

Abstract: In this study, the Mo-electrode thin films were deposited by a two-stepped process, and the high-purity copper indium selenide-based powder (CuInSe2, CIS) was fabricated by hydrothermal process by Nanowin Technology Co. Ltd. From the X-ray pattern of the CIS precursor, the mainly crystalline phase was CIS, and the almost undetectable CuSe phase was observed. Because the CIS powder was aggregated into micro-scale particles and the average particle sizes were approximately 3 to 8 μm, the CIS power was ground into nano-scale particles, then the 6 wt.% CIS particles were dispersed into isopropyl alcohol to get the solution for spray coating method. Then, 0.1 ml CIS solution was sprayed on the 20 mm × 10 mm Mo/glass substrates, and the heat treatment for the nano-scale CIS solution under various parameters was carried out in a selenization furnace. The annealing temperature was set at 550°C, and the annealing time was changed from 5 to 30 min, without extra Se content was added in the furnace. The influences of annealing time on the densification, crystallization, resistivity (ρ), hall mobility (μ), and carrier concentration of the CIS absorber layers were well investigated in this study.

An ultrafast rechargeable aluminium-ion battery

Abstract: An aluminium-ion battery is reported that can charge within one minute, and offers improved cycle life compared to previous devices; it operates through the electrochemical deposition and dissolution of aluminium at the anode, and the intercalation/de-intercalation of chloroaluminate anions into a novel graphitic-foam cathode. The low cost and useful electrical properties of aluminium suggest that rechargeable Al-ion batteries could offer viable and safe battery technology, but problems with cathode materials, poor cycling performance and other complications have persisted. Here Hongjie Dai and colleagues describe an Al-ion battery that can charge within one minute and offers substantially improved cycle life with little decay in capacity compared to previous devices reported in the literature. The battery operates through the electrochemical deposition and dissolution of Al and intercalation/de-intercalation of chloroaluminate anions into a novel 3D graphitic foam cathode using a non-flammable ionic liquid electrolyte. The development of new rechargeable battery systems could fuel various energy applications, from personal electronics to grid storage1,2. Rechargeable aluminium-based batteries offer the possibilities of low cost and low flammability, together with three-electron-redox properties leading to high capacity3. However, research efforts over the past 30 years have encountered numerous problems, such as cathode material disintegration4, low cell discharge voltage (about 0.55 volts; ref. 5), capacitive behaviour without discharge voltage plateaus (1.1–0.2 volts6 or 1.8–0.8 volts7) and insufficient cycle life (less than 100 cycles) with rapid capacity decay (by 26–85 per cent over 100 cycles)4,5,6,7. Here we present a rechargeable aluminium battery with high-rate capability that uses an aluminium metal anode and a three-dimensional graphitic-foam cathode. The battery operates through the electrochemical deposition and dissolution of aluminium at the anode, and intercalation/de-intercalation of chloroaluminate anions in the graphite, using a non-flammable ionic liquid electrolyte. The cell exhibits well-defined discharge voltage plateaus near 2 volts, a specific capacity of about 70 mA h g–1 and a Coulombic efficiency of approximately 98 per cent. The cathode was found to enable fast anion diffusion and intercalation, affording charging times of around one minute with a current density of ~4,000 mA g–1 (equivalent to ~3,000 W kg–1), and to withstand more than 7,500 cycles without capacity decay.

Enhanced coulomb counting method for estimating state-of-charge and state-of-health of lithium-ion batteries

Abstract: The coulomb counting method is expedient for state-of-charge (SOC) estimation of lithium-ion batteries with high charging and discharging efficiencies. The charging and discharging characteristics are investigated and reveal that the coulomb counting method is convenient and accurate for estimating the SOC of lithium-ion batteries. A smart estimation method based on coulomb counting is proposed to improve the estimation accuracy. The corrections are made by considering the charging and operating efficiencies. Furthermore, the state-of-health (SOH) is evaluated by the maximum releasable capacity. Through the experiments that emulate practical operations, the SOC estimation method is verified to demonstrate the effectiveness and accuracy.

Method for fabricating pixel structure of active matrix organic light-emitting diode

Abstract: A method for fabricating an AMOLED pixel includes forming a transparent semiconductor layer on a substrate and forming a first channel layer of the switch TFT, a lower electrode of a storage capacitor and a second channel layer of a driving TFT. A first dielectric layer is formed over the substrate. A first opaque metal gate of the switch TFT, a second opaque metal gate of the driving TFT and a scan line are formed on the first dielectric layer. A first source and a first drain of the switch TFT are formed in the first channel layer and a second source and a second drain of the switch TFT are formed in the second channel layer. A patterned transparent metal layer is formed on the first dielectric layer. A data line is formed over the substrate. An OLED is formed over the substrate.