L
Lanxia Cheng
Researcher at University of Texas at Dallas
Publications - 38
Citations - 1904
Lanxia Cheng is an academic researcher from University of Texas at Dallas. The author has contributed to research in topics: Atomic layer deposition & Thin film. The author has an hindex of 18, co-authored 38 publications receiving 1484 citations. Previous affiliations of Lanxia Cheng include University of Wisconsin–Milwaukee & Merck KGaA.
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Journal ArticleDOI
Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure.
Angelica Azcatl,Xiaoye Qin,Abhijith Prakash,Chenxi Zhang,Lanxia Cheng,Qingxiao Wang,Ning Lu,Moon J. Kim,Jiyoung Kim,Kyeongjae Cho,Rafik Addou,Christopher L. Hinkle,Joerg Appenzeller,Robert M. Wallace +13 more
TL;DR: It is found that the presence of nitrogen can induce compressive strain in the MoS2 structure, which represents the first evidence of strain induced by substitutional doping in a transition metal dichalcogenide material.
Journal ArticleDOI
Metal contacts on physical vapor deposited monolayer MoS2
Cheng Gong,Chunming Huang,Justin T. Miller,Lanxia Cheng,Yufeng Hao,David Cobden,Jiyoung Kim,Rodney S. Ruoff,Robert M. Wallace,Kyeongjae Cho,Xiaodong Xu,Yves J. Chabal +11 more
TL;DR: It is shown that insertion of graphene can effectively decouple MoS2 from the perturbations imparted by metal contacts (e.g., strain), while maintaining an effective electronic coupling between metal contact and MoS1, suggesting that graphene can act as a conductive buffer layer in TMD electronics.
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HfSe2 Thin Films: 2D Transition Metal Dichalcogenides Grown by Molecular Beam Epitaxy
Ruoyu Yue,Adam T. Barton,Hui Zhu,Angelica Azcatl,Luis Fabián Peña,Jian Wang,Xin Peng,Ning Lu,Lanxia Cheng,Rafik Addou,Stephen McDonnell,Luigi Colombo,Julia W. P. Hsu,Jiyoung Kim,Moon J. Kim,Robert M. Wallace,Christopher L. Hinkle +16 more
TL;DR: The growth of HfSe2 thin films using molecular beam epitaxy demonstrates the feasibility and significant potential of fabricating 2D material based heterostructures with tunable band alignments for a variety of nanoelectronics and optoelectronic applications.
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Remote Plasma Oxidation and Atomic Layer Etching of MoS2
TL;DR: This work shows that a remote O2 plasma can be useful for both surface functionalization and a controlled thinning method for MoS2 device fabrication processes.
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Nucleation and growth of WSe2: enabling large grain transition metal dichalcogenides
Ruoyu Yue,Yifan Nie,Lee A. Walsh,Rafik Addou,Chaoping Liang,Ning Lu,Adam T. Barton,Hui Zhu,Zifan Che,Diego Barrera,Lanxia Cheng,Pil-Ryung Cha,Yves J. Chabal,Julia W. P. Hsu,Jiyoung Kim,Moon J. Kim,Luigi Colombo,Robert M. Wallace,Kyeongjae Cho,Christopher L. Hinkle +19 more
TL;DR: In this article, the fundamental nucleation and growth behavior of WSe2 was investigated through a detailed experimental design combined with on-lattice, diffusion-based first principles kinetic modeling to enable large area TMD growth.