Angelica Azcatl

TL;DR: It is shown that substoichiometric molybdenum trioxide (MoOx, x < 3), a high work function material, acts as an efficient hole injection layer to MoS2 and WSe2 and will enable future exploration of their performance limits and intrinsic transport properties.

TL;DR: This work demonstrates the use of nm-thick transition metal oxides as a simple and versatile pathway for dopant-free contacts to inorganic semiconductors and has important implications toward enabling a novel class of junctionless devices with applications for solar cells, light-emitting diodes, photodetectors, and transistors.

TL;DR: It is shown that temperature, pressure, Se:W ratio, and substrate choice have a strong impact on the ensuing atomic layer structure, with optimized conditions yielding >8 μm size domains and a pristine van der Waals gap exists in WSe2/graphene heterostructures.

TL;DR: It is shown that inert substrates (i.e., graphene) permit the incorporation of several percent Mn in MoS2, while substrates with reactive surface terminations preclude Mn incorporation and merely lead to defective MoS 2.

TL;DR: It is found that the presence of nitrogen can induce compressive strain in the MoS2 structure, which represents the first evidence of strain induced by substitutional doping in a transition metal dichalcogenide material.