Lauren J. Borja

TL;DR: Attosecond extreme ultraviolet (XUV) spectroscopy is used to resolve the electron transfer from valence to conduction band states in semiconductors, and distinguished the electron dynamics—which proceed faster than a quadrillionth of a second after laser excitation—from the comparatively slower lattice motion of the silicon atomic nuclei.

TL;DR: The simultaneous observation of electrons and hole dynamics in germanium nanocrystalline thin films with extreme ultraviolet transient absorption spectroscopy paves the way for investigating few- to sub-femtosecond dynamics of both holes and electrons in complex semiconductor materials and across junctions.

TL;DR: The simultaneous direct and energy-resolved probing of ultrafast electron and hole dynamics in a silicon-germanium alloy with the stoichiometry Si0.25Ge0.75 opens a route to study carrier dynamics in more complex materials with femtosecond and sub-femtosed temporal resolution.

TL;DR: In this paper, a few-cycle laser pulses tuned both on and off the plasmon resonance (376 nm vs 800 nm, respectively) were used to initiate the sub-cycle photoelectron streaking.

TL;DR: In this paper, femtosecond transient absorption on iron and cobalt oxides identifies ligand to metal charge transfer as the main spectroscopic transition, rather than metal-to-metal charge transfer or d-d transitions, upon photoexcitation in the visible.