L
Le Van H
Researcher at Intel
Publications - 58
Citations - 526
Le Van H is an academic researcher from Intel. The author has contributed to research in topics: Layer (electronics) & Transistor. The author has an hindex of 10, co-authored 58 publications receiving 526 citations. Previous affiliations of Le Van H include Metz & Google.
Papers
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Patent
Non-planar gate all-around device and method of fabrication thereof
Rachmady Willy,Ravi Pillarisetty,Le Van H,Jack T. Kavalieros,Robert S. Chau,Jessica S. Kachian +5 more
TL;DR: In this paper, a non-planar gate all-around device and method of fabrication was described, which includes a substrate having a top surface with a first lattice constant and a bottom gate isolation is formed on the top surface of the substrate under the bottom most channel nanowire.
Patent
Techniques and configurations for stacking transistors of an integrated circuit device
Ravi Pillarisetty,Charles C. Kuo,Han Wui Then,Gilbert Dewey,Willy Rachmady,Le Van H,Marko Radosavljevic,Jack T. Kavalieros,Niloy Mukherjee +8 more
TL;DR: In this article, the authors provide techniques and configurations for stacking transistors of a memory device, where a gate terminal capacitively coupled with the first channel layer is used to control flow of electrical current through the first transistor and capacitive coupled with a second channel layer for a second transistor.
Patent
Epitaxial film on nanoscale structure
Benjamin Chu-Kung,Le Van H,Robert S. Chau,Sansaptak Dasgupta,Gilbert Dewey,Nitika Goel,Jack T. Kavalieros,Metz Matthew,Niloy Mukherjee,Ravi Pillarisetty,Willy Rachmady,Marko Radosavljevic,Han Wui Then,Nancy M. Zelick +13 more
TL;DR: In this article, an epitaxial layer is included in a channel region of a transistor and the nanowire, fin, or pillar can be removed to provide greater access to the epitaxia.
Patent
Defect transferred and lattice mismatched epitaxial film
Benjamin Chu-Kung,Le Van H,Robert S. Chau,Sansaptak Dasgupta,Gilbert Dewey,Niti Goel,Jack T. Kavalieros,Matthew V. Metz,Niloy Mukherjee,Ravi Pillarisetty,Willy Rachmady,Marko Radosavljevic,Han Wui Then,Nancy M. Zelick +13 more
TL;DR: In this article, a very thin layer nanostructure (e.g., a Si or SiGe fin) is used as a template to grow a crystalline, non-lattice matched, epitaxial (EPI) layer.
Patent
Epitaxial film growth on patterned substrate
Niti Goel,Niloy Mukherjee,Seung Hoon Sung,Le Van H,Matthew V. Metz,Jack T. Kavalieros,Ravi Pillarisetty,Sanaz K. Gardner,Sansaptak Dasgupta,Willy Rachmady,Benjamin Chu-Kung,Marko Radosavljevic,Gilbert Dewey,Marc C. French,Jessica S. Kachian,Satyarth Suri,Robert S. Chau +16 more
TL;DR: In this paper, the authors describe an EPI superlattice formed within a trench and covered with a relatively defect free EPI layer (that is still included in the trench).