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Niloy Mukherjee
Researcher at Intel
Publications - 180
Citations - 4182
Niloy Mukherjee is an academic researcher from Intel. The author has contributed to research in topics: Layer (electronics) & Transistor. The author has an hindex of 32, co-authored 179 publications receiving 4082 citations. Previous affiliations of Niloy Mukherjee include University of Cincinnati & Nottingham Trent University.
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Journal ArticleDOI
Fabrication of tapered, conical-shaped titania nanotubes
TL;DR: Using anodic oxidation with a time-dependent linearly varying anodization voltage, the tapered, conical-shaped titania nanotubes were obtained by anodizing titanium foil in a 0.5% hydrofluoric acid electrolyte, with the anodisation voltage linearly increased from 10-23 V at rates varying from 2.0-0.43 V/min this article.
Proceedings ArticleDOI
Fabrication, characterization, and physics of III–V heterojunction tunneling Field Effect Transistors (H-TFET) for steep sub-threshold swing
G. Dewey,Benjamin Chu-Kung,J. Boardman,J. M. Fastenau,Jack Portland Kavalieros,Roza Kotlyar,W. K. Liu,D. Lubyshev,Matthew V. Metz,Niloy Mukherjee,P. Oakey,Ravi Pillarisetty,Marko Radosavljevic,Han Wui Then,R. Chau +14 more
TL;DR: In this paper, the steepest sub-threshold swing (SS < 60mV/decade) was achieved in a III-V TFET by using thin gate oxide, heterojunction engineering and high source doping.
Proceedings ArticleDOI
Advanced high-K gate dielectric for high-performance short-channel In 0.7 Ga 0.3 As quantum well field effect transistors on silicon substrate for low power logic applications
Marko Radosavljevic,Benjamin Chu-Kung,S. Corcoran,G. Dewey,Mantu K. Hudait,J. M. Fastenau,Jack Portland Kavalieros,W. K. Liu,D. Lubyshev,Matthew V. Metz,K. Millard,Niloy Mukherjee,W. Rachmady,Uday Shah,Robert S. Chau +14 more
TL;DR: In this article, an advanced composite high-K gate stack (4nm TaSiO x -2nm InP) in the In 0.7 Ga 0.3 As quantum-well field effect transistor (QWFET) on silicon substrate is described.
Proceedings ArticleDOI
Electrostatics improvement in 3-D tri-gate over ultra-thin body planar InGaAs quantum well field effect transistors with high-K gate dielectric and scaled gate-to-drain/gate-to-source separation
Marko Radosavljevic,G. Dewey,Dipanjan Basu,J. Boardman,Benjamin Chu-Kung,J. M. Fastenau,S. Kabehie,Jack Portland Kavalieros,Le Van Kh,W. K. Liu,D. Lubyshev,Matthew V. Metz,K. Millard,Niloy Mukherjee,L. Pan,R. Pillarisetty,W. Rachmady,Uday Shah,Han Wui Then,Robert S. Chau +19 more
TL;DR: The 3-D Tri-gate and ultra-thin body planar InGaAs quantum well field effect transistors (QWFETs) with high-K gate dielectric and scaled gate-tosource/gate-to-drain (L SIDE) have been fabricated and compared in this article.
Journal ArticleDOI
A titania nanotube-array room-temperature sensor for selective detection of hydrogen at low concentrations.
TL;DR: The nanoscale geometry of the nanotubes, in particular the points of tube-to-tube contact, is believed to be responsible for the outstanding hydrogen gas sensitivities.