An object is to provide a method for manufacturing a semiconductor device, in which the number of photolithography steps can be reduced, the manufacturing process can be simplified, and manufacturing can be performed with high yield at low cost A method for manufacturing a semiconductor device includes the following steps: forming a semiconductor film; irradiating a laser beam by passing the laser beam through a photomask including a shield for shielding the laser beam; subliming a region which has been irradiated with the laser beam through a region in which the shield is not formed in the photomask in the semiconductor film; forming an island-shaped semiconductor film in such a way that a region which is not irradiated with the laser beam is not sublimed because it is a region in which the shield is formed in the photomask; forming a first electrode which is one of a source electrode and a drain electrode and a second electrode which is the other one of the source electrode and the drain electrode; forming a gate insulating film; and forming a gate electrode over the gate insulating film

Method for Manufacturing Semiconductor Device

A system and methods allowing the creation, integration, and transaction of advantages (e.g. desired environment features and/or elements). In an illustrative implementation, the system may operate partially or completely in a computing environment. Where a computing environment is employed, the computing environment may support a computing application running on a stand alone or networked computing system. The computing application may maintain a user interface portion, a processing portion, and cooperate with a database. In operation, a user may register his/her profile information with an advantages content provider such that when navigating through the computing application, the user have access to and purchase offered advantages and interact with interactive advertisements to purchase products and/or services. The advantages may be retrieved from a cooperating database and provided to the user. A record of the transaction is stored by the computing application in accordance to user profile so that the user may be properly charged for the transacted advantages or purchased products and/or services.

System and methods for obtaining advantages and transacting the same in a computer gaming environment

A low-energy oxygen and/or nitrogen ion beam with an energy level of about 60 eV is used to form an ultra-thin layer of silicon adduct on unheated silicon substrates. The ion beam is created with a single-grid Kaufman-type source and the process is performed in a vacuum chamber evacuated to a base pressure of about 3×10-7 torr with oxygen and/or nitrogen gases, with or without argon introduced into the chamber. FET-gate-quality oxides on the order of about 45 angstroms have been produced in the successful fabrication of n-channel MOSFET's.

Method of forming dielectric thin films on silicon by low energy ion beam bombardment

A method is disclosed for growing relatively thin (e.g., <250 Å) thermal oxides which results in lowering the defect density, mobile ion concentration, interface trapped charge density, and stress of the structure. In particular, the prior art oxidation process is modified to include in situ preoxidation silicon surface treatments to improve the silicon nucleation surface. For example, gettering operations may be performed to remove metal-ion contaminants from the silicon nucleation surface, and high temperature annealing operations may be performed to remove any local stress gradients which exist in the silicon substrate during the initial stages of oxidation. By improving the silicon nucleation surface, the subsequently grown thin oxide will be improved in terms of the qualities mentioned above.

Growth-modified thermal oxidation for thin oxides

A method for forming a thin oxide layer structure includes the step of first growing a dry oxide layer. A layer grown in steam and chlorine is formed next, followed by a final dry oxide layer. An anneal step in an inert gas further improves the quality of the oxide layer. The structure formed by such a process provides a layer of steam grown oxide sandwiched between two layers of oxide grown in a dry atmosphere.

Thin oxide structure and method

Method for forming silicon oxide layers on silicon surfaces with at least two oxidation steps, in which a first step (B1) is performed at a low oxidation temperature (T1) in an atmosphere containing a mixture of oxygen and hydrogen chloride with a low hydrogen chloride concentration, and in which a second step (B3) is performed at a high oxidation temperature (T2), characterized by the feature that the second step (B3) is performed in a dry oxygen atmosphere. An intermediate step (B2) may also be employed for heating from the low temperature to the high temperature.

Method for forming silicon oxide films

Die Erfindung betrifft ein Verfahren zur Herstellung von Siliziumoxidschichten auf Silziumoberflachen mit mindestens zwei Oxidationsschritten, bei dem ein erster Schritt (B 1 ) bei niedriger Oxidationstemperatur (T 1 ) in einer ein Gemisch aus Sauerstoff und Chlorwasserstoff mit geringer Chlorwasserstoffkonzentration enthaltenden Atmosphare durchgefuhrt wird und bei dem ein zweiter Schritt (8 3 ) bei hoher Oxidationstemperatur (T 2 ) in trockener Sauerstoffatmosphare durchgefuhrt wird. The invention relates to a method for producing silicon oxide films on Silziumoberflachen having at least two oxidation steps, in which a first step (B 1) at a low oxidation temperature (T 1) is carried out in an a mixture of oxygen and hydrogen chloride with a low concentration of hydrogen chloride-containing atmosphere, and wherein a second step (8 3) at a high oxidation temperature (T 2) is performed in a dry oxygen atmosphere.

Leo Dipl.-Phys. Grasser

Papers

Method for forming silicon oxide films

Method of making silicon oxide layers