Patent
Method for forming silicon oxide films
TLDR
In this article, a method for forming silicon oxide layers on silicon surfaces with at least two oxidation steps was proposed, in which a first step was performed at a low oxidation temperature (T1) in an atmosphere containing a mixture of oxygen and hydrogen chloride with a low hydrogen chloride concentration, and a second step (B3) was performed in a high oxidation temperature at a dry oxygen atmosphere.Abstract:
Method for forming silicon oxide layers on silicon surfaces with at least two oxidation steps, in which a first step (B1) is performed at a low oxidation temperature (T1) in an atmosphere containing a mixture of oxygen and hydrogen chloride with a low hydrogen chloride concentration, and in which a second step (B3) is performed at a high oxidation temperature (T2), characterized by the feature that the second step (B3) is performed in a dry oxygen atmosphere. An intermediate step (B2) may also be employed for heating from the low temperature to the high temperature.read more
Citations
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References
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Journal ArticleDOI
Dielectric Breakdown Properties of SiO2 Films Grown in Halogen and Hydrogen‐Containing Environments
TL;DR: In this article, thermal oxidation of silicon, in the presence of chlorine or bromine compounds, effectively improved the dielectric breakdown characteristics (as measured with a voltage ramp) of the resulting Si films.
Patent
High-pressure, high-temperature gaseous chemical method for silicon oxidation
TL;DR: In this article, the oxide growth is produced under high pressure and high temperature conditions within a reaction chamber by oxidizing gases which are maintained in a continuous flow condition into and through the chamber.
Patent
Process for high pressure oxidation of silicon
TL;DR: A process for high pressure oxidation of silicon comprising the steps of inserting silicon wafers and an oxidizing substance into a quartz capsule sealing the quartz capsule gastightly by fusing, and heating the capsule to generate a high pressure oxidizing atmosphere therein and to form an oxide film on the silicon wafer without a flow of the oxidising atmosphere is described in this paper.
Patent
Thermal oxidation of silicon
TL;DR: In this article, metal-oxide-semiconductor (MOS) devices can be produced having an initially low oxide space charge and an improved electrical stability under bias-temperature stress.
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