Abstract The emergence of silicon photonics over the past two decades has established silicon as a preferred substrate platform for photonic integration. While most silicon-based photonic components have so far been realized in the near-infrared (near-IR) telecommunication bands, the mid-infrared (mid-IR, 2–20-μm wavelength) band presents a significant growth opportunity for integrated photonics. In this review, we offer our perspective on the burgeoning field of mid-IR integrated photonics on silicon. A comprehensive survey on the state-of-the-art of key photonic devices such as waveguides, light sources, modulators, and detectors is presented. Furthermore, on-chip spectroscopic chemical sensing is quantitatively analyzed as an example of mid-IR photonic system integration based on these basic building blocks, and the constituent component choices are discussed and contrasted in the context of system performance and integration technologies.

/pdf/mid-infrared-integrated-photonics-on-silicon-a-perspective-31psns51w2.pdf

Mid-infrared integrated photonics on silicon: a perspective

There is a rapidly growing demand to use silicon and silicon nitride (Si3N4) integrated photonics for sensing applications, ranging from refractive index to spectroscopic sensing. By making use of advanced CMOS technology, complex miniaturized circuits can be easily realized on a large scale and at a low cost covering visible to mid-IR wavelengths. In this paper we present our recent work on the development of silicon and Si3N4-based photonic integrated circuits for various spectroscopic sensing applications. We report our findings on waveguide-based absorption, and Raman and surface enhanced Raman spectroscopy. Finally we report on-chip spectrometers and on-chip broadband light sources covering very near-IR to mid-IR wavelengths to realize fully integrated spectroscopic systems on a chip.

https://www.photonics.intec.ugent.be/download/pub_3571.pdf

Silicon and silicon nitride photonic circuits for spectroscopic sensing on-a-chip [Invited]

Midinfrared plasmonic sensing allows the direct targeting of unique vibrational fingerprints of molecules. While gold has been used almost exclusively so far, recent research has focused on semiconductors with the potential to revolutionize plasmonic devices. We fabricate antennas out of heavily doped Ge films epitaxially grown on Si wafers and demonstrate up to 2 orders of magnitude signal enhancement for the molecules located in the antenna hot spots compared to those located on a bare silicon substrate. Our results set a new path toward integration of plasmonic sensors with the ubiquitous CMOS platform.

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.5b03247

Midinfrared Plasmon-Enhanced Spectroscopy with Germanium Antennas on Silicon Substrates

Germanium (Ge) has played a key role in silicon photonics as an enabling material for datacom applications. Indeed, the unique properties of Ge have been leveraged to develop high performance integrated photodectors, which are now mature devices. Ge is also very useful for the achievement of compact modulators and monolithically integrated laser sources on silicon. Interestingly, research efforts in these domains also put forward the current revolution of mid-IR photonics. Ge and Ge-based alloys also present strong advantages for mid-infrared photonic platform such as the extension of the transparency window for these materials, which can operate at wavelengths beyond 8 μm. Different platforms have been proposed to take benefit from the broad transparency of Ge up to 15 μm, and the main passive building blocks are now being developed. In this review, we will present the most relevant Ge-based platforms reported so far that have led to the demonstration of several passive and active building blocks for mid-IR photonics. Seminal works on mid-IR optical sensing using integrated platforms will also be reviewed.

/pdf/germanium-based-integrated-photonics-from-near-to-mid-mxthlh34eo.pdf

Germanium-based integrated photonics from near- to mid-infrared applications

Since the successful fabrication of two-dimensional (2D) tellurium (Te) in 2017, its fascinating properties including a thickness dependence bandgap, environmental stability, piezoelectric effect, high carrier mobility, and photoresponse among others show great potential for various applications. These include photodetectors, field-effect transistors, piezoelectric devices, modulators, and energy harvesting devices. However, as a new member of the 2D material family, much less known is about 2D Te compared to other 2D materials. Motivated by this lack of knowledge, we review the recent progress of research into 2D Te nanoflakes. Firstly, we introduce the background and motivation of this review. Then, the crystal structures and synthesis methods are presented, followed by an introduction to their physical properties and applications. Finally, the challenges and further development directions are summarized. We believe that milestone investigations of 2D Te nanoflakes will emerge soon, which will bring about great industrial revelations in 2D materials-based nanodevice commercialization.

/pdf/two-dimensional-tellurium-progress-challenges-and-prospects-4zzd6t14t9.pdf

Two-Dimensional Tellurium: Progress, Challenges, and Prospects

Germanium-on-silicon thermo-optic phase shifters are demonstrated in the 5 μm wavelength range. Basic phase shifters require 700 mW of power for a 2π phase shift. The required power is brought down to 80 mW by complete undercut using focused ion beam. Finally an efficient thermo-optic phase shifter is demonstrated on the germanium on SOI platform. A tuning power (for a 2π phase shift) of 105 mW is achieved for a Ge-on-SOI structure which is lowered to 16 mW for a free standing phase shifter.

https://biblio.ugent.be/publication/5864627/file/5864665.pdf

Ge-on-Si and Ge-on-SOI thermo-optic phase shifters for the mid-infrared

We demonstrate a new kind of single-mode micro-optical waveguide based on a liquid core on top of solid substrate and air cladding. The liquid is held in place by surface tension and patterned surface energy on the substrate. Due to the smooth nature of the liquid/air interface down to the molecular level, low scattering losses are expected. Losses were measured to be −6.0 and −7.8  dB/cm for, respectively, 12 and 9 μm wide waveguides.

/pdf/single-mode-air-clad-liquid-core-waveguides-on-a-surface-4m5urlwfdk.pdf

Liesbet Van Landschoot

Papers

Ge-on-Si and Ge-on-SOI thermo-optic phase shifters for the mid-infrared

Single-mode air-clad liquid-core waveguides on a surface energy patterned substrate

A multimodal waveguide for enhanced performance in optical disc read-out