Yosuke Shimura

TL;DR: This work demonstrates that GeSn/Ge heterostructures can be used to developed SOI waveguide integrated photodetectors for short-wave infrared applications.

TL;DR: In this paper, the use of a germanium-on-silicon waveguide platform to realize an arrayed waveguide grating (AWG) operating in the 5 μm wavelength range, which can be used as a wavelength multiplexer for mid-infrared (midIR) light engines or as the core element of a midIR spectrometer, is described.

TL;DR: In this paper, a silicon-based photonic integrated circuit technology for applications beyond the telecommunication wavelength range is discussed, where the strong nonlinearity of silicon combined with the low nonlinear absorption in the mid-infrared is exploited to generate picosecond pulse based supercontinuum sources, optical parametric oscillators and wavelength translators connecting the tele communication wavelength range and the midinfrared.

TL;DR: In this article, a critical misfit strain control the onset of Sn precipitation at a given thickness of the Ge1−xSnx layer on virtual Ge substrates (v-Ge).

TL;DR: In this article, the compatibility of GeSn materials with source/drain engineering processes (B implantation and activation and NiGeSn formation) has been studied, and a low thermal budget has been determined for those processes on GeSn alloys.