L
Linli Xie
Researcher at University of Virginia
Publications - 30
Citations - 325
Linli Xie is an academic researcher from University of Virginia. The author has contributed to research in topics: Schottky diode & Diode. The author has an hindex of 7, co-authored 26 publications receiving 227 citations. Previous affiliations of Linli Xie include University of Electronic Science and Technology of China.
Papers
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Journal ArticleDOI
Thin film lithium niobate electro-optic modulator with terahertz operating bandwidth.
TL;DR: The fabricated modulator possesses a tightly confined optical mode, which lends itself to a strong interaction between the modulating RF field and the guided optical carrier; resulting in a measured DC half-wave voltage of 3.8 V·cm-1.
Journal ArticleDOI
Heterogeneous photodiodes on silicon nitride waveguides.
Qianhuan Yu,Junyi Gao,Nan Ye,Baiheng Chen,Keye Sun,Linli Xie,Kartik Srinivasan,Michael Zervas,Gabriele Navickaite,Michael Geiselmann,Andreas Beling +10 more
TL;DR: InGaAs/InP modified uni-traveling carrier photodiodes on Si3N4 waveguides with 20 nA dark current, 20 GHz bandwidth, and record-high external (internal) responsivities are demonstrated.
Journal ArticleDOI
Measurement and Extraction of Parasitic Parameters of Quasi-Vertical Schottky Diodes at Submillimeter Wavelengths
Souheil Nadri,Linli Xie,Masoud Jafari,Matthew F. Bauwens,Alexander Arsenovic,Robert M. Weikle +5 more
TL;DR: In this paper, a method for extracting parasitic equivalent-circuit model parameters at submillimeter-wave frequencies was proposed, which utilizes measurements of coplanar waveguide-fed passive structures in the WR-2.2 band.
Journal ArticleDOI
An Epitaxy Transfer Process for Heterogeneous Integration of Submillimeter-Wave GaAs Schottky Diodes on Silicon Using SU-8
Linli Xie,Souheil Nadri,Naser Alijabbari,Michael E. Cyberey,Matthew F. Bauwens,Arthur W. Lichtenberger,N. Scott Barker,Robert M. Weikle +7 more
TL;DR: In this article, a new approach for fabricating quasi-vertical submillimeter-wave GaAs Schottky diodes heterogeneously integrated to high-resistivity silicon substrates is described.
Proceedings ArticleDOI
A 160 GHz Frequency Quadrupler based on Heterogeneous Integration of GaAs Schottky Diodes onto Silicon using SU-8 for Epitaxy Transfer
Souheil Nadri,Linli Xie,Masoud Jafari,Naser Alijabbari,Michael E. Cyberey,N. Scott Barker,Arthur W. Lichtenberger,Robert M. Weikle +7 more
TL;DR: An integrated frequency quadrupler operating at 160 GHz, producing 100 mW of output power, and achieving peak efficiency of 25.5% is described in this article, which consists of GaAs Schottky diodes with epitaxy transferred to a micromachined silicon carrier forming a heterogeneously integrated chip.