L
Long Lv
Publications - 34
Citations - 797
Long Lv is an academic researcher. The author has contributed to research in topics: Ferroelectricity & Thin film. The author has an hindex of 10, co-authored 28 publications receiving 435 citations.
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Journal ArticleDOI
Photocatalytic properties of the g-C3N4/{010} facets BiVO4 interface Z-Scheme photocatalysts induced by BiVO4 surface heterojunction
TL;DR: The g-C3N4/{010} facets of BiVO4 interface Z-scheme photocatalysts are fabricated by ultrasonic dispersion method as mentioned in this paper.
Journal ArticleDOI
Defect-mediated Z-scheme BiO2-x/Bi2O2.75 photocatalyst for full spectrum solar-driven organic dyes degradation
Wang Min,Guoqiang Tan,Dan Zhang,Li Bin,Long Lv,Wang Ying,Huijun Ren,Zhang Xinlei,Ao Xia,Yun Liu +9 more
TL;DR: In this article, defect-mediated Z-scheme BiO2-x/Bi2O2.75 heterojunction photocatalysts without electron mediator were prepared via a simple low-temperature hydrothermal method.
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Dual defects and build-in electric field mediated direct Z-scheme W18O49/g-C3N4−x heterojunction for photocatalytic NO removal and organic pollutant degradation
TL;DR: W18O49/g-C3N4-x heterojunction exhibited enhanced photocatalytic performance for NO removal and full-solar-spectrum-driven pollutants degradation and could directly drive oxygen reduction reaction to generate O2- species.
Journal ArticleDOI
Photocatalytic properties of Bi2WO6/BiPO4 Z-scheme photocatalysts induced by double internal electric fields
Su Yuning,Guoqiang Tan,Liu Ting,Long Lv,Wang Ying,Xinglei Zhang,Zhongwei Yue,Huijun Ren,Ao Xia +8 more
TL;DR: In this paper, the internal polar electric fields of Bi2WO6 and BiPO4 induced an external electric field between the two materials, generating P O W bonds at the interfaces.
Journal ArticleDOI
Ferroelectric properties of BiFeO3 thin films by Sr/Gd/Mn/Co multi-doping
Zhengjun Chai,Guoqiang Tan,Zhongwei Yue,Wei Yang,Guo Meiyou,Huijun Ren,Ao Xia,Xue Mintao,Yun Liu,Long Lv +9 more
TL;DR: In this paper, the formation of oxygen vacancies of BSGxFMC thin films is restrained by multi-doping, leading to the decrease of built-in electric field in depletion layer formed between Au electrode and BFO ferroelectric layer.