M
M. Bellettato
Researcher at University of Aveiro
Publications - 20
Citations - 212
M. Bellettato is an academic researcher from University of Aveiro. The author has contributed to research in topics: Silicon & Carbide. The author has an hindex of 9, co-authored 20 publications receiving 198 citations.
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Journal ArticleDOI
Silicon nanocrystals in carbide matrix
Caterina Summonte,M. Allegrezza,M. Bellettato,Fabiola Liscio,Mariaconcetta Canino,A. Desalvo,J. López-Vidrier,Sergi Hernández,Lluís López-Conesa,Sònia Estradé,Francesca Peiró,B. Garrido,P. Löper,Manuel Schnabel,Stefan Janz,Roberto Guerra,Stefano Ossicini +16 more
TL;DR: In this article, the conditions for the periodic structure to survive the high temperature annealing and for the SiC barrier to confine the Si crystal growth are examined by energy-filtered transmission electron microscopy and X-ray reflection.
Journal ArticleDOI
Optical and electrical properties of Si nanocrystals embedded in SiC matrix
Rimpy Shukla,Caterina Summonte,Mariaconcetta Canino,M. Allegrezza,M. Bellettato,A. Desalvo,Nayan Sharma,M. Jangir,I.P. Jain +8 more
TL;DR: In this article, optical and electrical characterization of Si NCs in SiC matrix resulting from annealing at 1100 °C of silicon-rich carbide (SRC)/SiC multilayers produced by PECVD, varying either the Si content in the SRC or the SiC thickness.
Journal ArticleDOI
Structural, optical and electrical properties of silicon nanocrystals embedded in SixC1−x/SiC multilayer systems for photovoltaic applications
J. López-Vidrier,Sergi Hernández,J. Samà,Mariaconcetta Canino,M. Allegrezza,M. Bellettato,Rimpy Shukla,Manuel Schnabel,Philipp Löper,Lluís López-Conesa,Sònia Estradé,Francesca Peiró,Stefan Janz,B. Garrido +13 more
TL;DR: In this paper, structural, optical and electrical characterization of Si x C 1− x /SiC multilayer systems with different silicon content was carried out by means of energy-filtered transmission electron microscopy (EFTEM).
Journal ArticleDOI
Silicon nanocrystals from high-temperature annealing : characterization on device level
P. Löper,Mariaconcetta Canino,J. López-Vidrier,Manuel Schnabel,Florian Schindler,Friedemann D. Heinz,Anke Witzky,M. Bellettato,M. Allegrezza,Daniel Hiller,A. M. Hartel,Sebastian Gutsch,Sergi Hernández,Roberto Guerra,Stefano Ossicini,Blas Garrido,Stefan Janz,Margit Zacharias +17 more
Journal ArticleDOI
Boron doping of silicon rich carbides: Electrical properties
Caterina Summonte,Mariaconcetta Canino,M. Allegrezza,M. Bellettato,A. Desalvo,Rimpy Shukla,I.P. Jain,Isodiana Crupi,S. Milita,Luca Ortolani,Lluís López-Conesa,Sònia Estradé,Francesca Peiró,B. Garrido +13 more
TL;DR: In this article, X-ray diffraction has been used to confirm the formation of crystallized Si and 3C-SiC nanodomains, and room temperature dark conductivity is obtained in the multilayer that includes a boron doped well.