Mariaconcetta Canino

TL;DR: In this article, the conditions for the periodic structure to survive the high temperature annealing and for the SiC barrier to confine the Si crystal growth are examined by energy-filtered transmission electron microscopy and X-ray reflection.

TL;DR: In this paper, an illumination-dependent analysis of silicon nanocrystal p-i-n solar cells is presented within the framework of the constant field approximation, and an effective mobility lifetime product of 10−10 cm2/V is derived.

TL;DR: In this paper, the role of the heating rate in the postimplantation annealing process of SiC was investigated, and the faster ramp-up rate reduced the sheet resistance of the implanted layer of about 40% with respect to the slowest process and significantly reduced the leakage current of the diodes.

TL;DR: In this article, single-polished c-Si wafers were textured in aqueous solutions with varying concentrations of tetra-methyl ammonium hydroxide (TMAH), and the resulting surface reflectance and morphology were examined as a function of etching time and temperature, TMAH concentration, and addition of isopropyl alcohol to the solution.

TL;DR: In this article, optical and electrical characterization of Si NCs in SiC matrix resulting from annealing at 1100 °C of silicon-rich carbide (SRC)/SiC multilayers produced by PECVD, varying either the Si content in the SRC or the SiC thickness.