M
M. Duarte Naia
Researcher at University of Trás-os-Montes and Alto Douro
Publications - 16
Citations - 167
M. Duarte Naia is an academic researcher from University of Trás-os-Montes and Alto Douro. The author has contributed to research in topics: Positron & Vacancy defect. The author has an hindex of 7, co-authored 16 publications receiving 155 citations. Previous affiliations of M. Duarte Naia include University of Trento.
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Vacancy-hydrogen interaction in H-implanted Si studied by positron annihilation.
R. S. Brusa,M. Duarte Naia,Antonio Zecca,Carlo Emanuele Nobili,G. Ottaviani,Rita Tonini,Alfredo Dupasquier +6 more
TL;DR: The density of vacancylike defects, produced in silicon by hydrogen implantation at 15.5 keV and surviving to successive isochronal annealings, has been measured by means of a slow positron beam and shows that the number of defects acting as positron traps is a small fraction of the Frenkel pairs produced by implantation.
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Positron mobility in polyethylene in the 60–400 K temperature range
TL;DR: In this article, the positron mobility in polyethylene samples (67.2% crystalline, glass transition temperatureTg=151 K) was determined in the 64-400 K temperature range by Doppler shift measurements.
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An analytical study of the transient motion of a dense rigid sphere in an incompressible newtonian fluid
TL;DR: In this paper, a theoretical study of the transient sphere motion under the influence of gravity through an incompressible Newtonian fluid subject to an Oseen-type drag relationship has been carried out and exact closed form expressions for the instantaneous position, velocity and acceleration of the sphere are presented.
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Modification of the α-Fe surface using a low energy high current electron beam
Antonio Zecca,Roberto S. Brusa,M. Duarte Naia,J. Paridaens,Alexander D. Pogrebnjak,A.B. Markov,G.E. Ozur,D.I. Proskurovsky,V.P. Rotstein +8 more
TL;DR: In this article, the authors investigated the modification process along the penetration depth of a low energy high current electron beam using nuclear-physical and physical methods, and showed that the thickness of the melted layer increases with the energy flow density.
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Effect of low level contamination on TiAl alloys studied by SIMS
TL;DR: In this paper, the effect of low level contamination was studied by SIMS and the comparison of SIMS in-depth profiles with hardness profiles, gives insight concerning the significance of the oxygen concentration in the properties of the alloy and regarding the choice of the most suitable materials for TiAl production.