Deposits of clastic carbonate-dominated (calciclastic) sedimentary slope systems in the rock record have been identified mostly as linearly-consistent carbonate apron deposits, even though most ancient clastic carbonate slope deposits fit the submarine fan systems better. Calciclastic submarine fans are consequently rarely described and are poorly understood. Subsequently, very little is known especially in mud-dominated calciclastic submarine fan systems. Presented in this study are a sedimentological core and petrographic characterisation of samples from eleven boreholes from the Lower Carboniferous of Bowland Basin (Northwest England) that reveals a >250 m thick calciturbidite complex deposited in a calciclastic submarine fan setting. Seven facies are recognised from core and thin section characterisation and are grouped into three carbonate turbidite sequences. They include: 1) Calciturbidites, comprising mostly of highto low-density, wavy-laminated bioclast-rich facies; 2) low-density densite mudstones which are characterised by planar laminated and unlaminated muddominated facies; and 3) Calcidebrites which are muddy or hyper-concentrated debrisflow deposits occurring as poorly-sorted, chaotic, mud-supported floatstones. These

Phd by thesis

Here we summarize recent progress in the development of electrolyte-gated transistors (EGTs) for organic and printed electronics. EGTs employ a high capacitance electrolyte as the gate insulator; the high capacitance increases drive current, lowers operating voltages, and enables new transistor architectures. Although the use of electrolytes in electronics is an old concept going back to the early days of the silicon transistor, new printable, fast-response polymer electrolytes are expanding the potential applications of EGTs in flexible, printed digital circuits, rollable displays, and conformal bioelectronic sensors. This report introduces the structure and operation mechanisms of EGTs and reviews key developments in electrolyte materials for use in printed electronics. The bulk of the article is devoted to electrical characterization of EGTs and emerging applications.

Electrolyte-gated transistors for organic and printed electronics

2.2. Interface Trapping Effects 211 3. High-k Dielectric Materials for OFETs 212 3.1. Inorganic Dielectrics 212 3.1.1. Aluminum Oxide 213 3.1.2. Tantalum Oxide 215 3.1.3. Titanium Dioxide 216 3.1.4. Hafnium Dioxide 217 3.1.5. Zirconium Dioxide 218 3.1.6. Cerium Dioxide 218 3.2. Organic Dielectrics 218 3.2.1. Polymer Dielectrics 218 3.2.2. Self-Assembled Monoand Multilayers 225 3.3. Hybrid Dielectrics 227 3.3.1. Polymeric-Nanoparticle Composites 227 3.3.2. Inorganic-Organic Bilayers 232 3.3.3. Hybrid Solid Polymer Electrolytes 235 4. Summary 235 5. Acknowledgments 236 6. References 236

High-k organic, inorganic, and hybrid dielectrics for low-voltage organic field-effect transistors.

The functioning principles of electronic sensors based on organic semiconductor field-effect transistors (OFETs) are presented. The focus is on biological sensors but also chemical ones are reviewed to address general features. The field-induced electronic transport and the chemical and biological interactions for the sensing, each occurring at the relevant functional interface, are separately introduced. Once these key learning points have been acquired, the combined picture for the FET electronic sensing is proposed. The perspective use of such devices in point-of-care is introduced, after some basics on analytical biosensing systems are provided as well. This tutorial review includes also a necessary overview of the OFET sensing structures, but the focus will be on electronic rather than electrochemical detection. The differences among the structures are highlighted along with the implications on the performance level in terms of key analytical figures of merit such as: repeatability, sensitivity and selectivity.

Organic field-effect transistor sensors: a tutorial review

Printed electronics enable the fabrication of large-scale, low-cost electronic devices and systems, and thus offer significant possibilities in terms of developing new electronics/optics applications in various fields. Almost all electronic applications require information processing using logic circuits. Hence, realizing the high-speed operation of logic circuits is also important for printed devices. This report summarizes recent progress in the development of printed thin-film transistors (TFTs) and integrated circuits in terms of materials, printing technologies, and applications. The first part of this report gives an overview of the development of functional inks such as semiconductors, electrodes, and dielectrics. The second part discusses high-resolution printing technologies and strategies to enable high-resolution patterning. The main focus of this report is on obtaining printed electrodes with high-resolution patterning and the electrical performance of printed TFTs using such printed electrodes. In the final part, some applications of printed electronics are introduced to exemplify their potential.

Recent Progress in the Development of Printed Thin-Film Transistors and Circuits with High-Resolution Printing Technology.

Organic thin film transistors with HfO2 high-k gate dielectric grown by anodic oxidation or deposited by sol–gel

We report a study on the influence of dielectric surface properties on the growth, the morphology and ordering of pentacene layers and associated consequences on the performance of organic field effect transistors (OFETs). This work mainly aims at disentangling the respective influences of surface roughness and surface energy on pentacene growth. A range of inorganic high- k oxides as well as polymer dielectrics were compared: Ta 2 O 5 deposited by e-beam evaporation or grown by anodic oxidation, polymethylmethacrylate (PMMA) single layer or PMMA/Ta 2 O 5 bi-layer. Some complementary results on anodic HfO 2 were also added. Atomic force microscopy, X-ray diffraction and infrared absorption evidenced that hydrophobicity and surface roughness drastically influence pentacene growth mechanisms. Transistors realized with the different dielectrics show characteristics well correlated to pentacene structural properties. In particularly, we point out the relationship between the grain size and the field effect mobility with the surface energy of the dielectric substrate. The general trend is that the bigger the grains, the higher the mobility but that best electrical performances of OFETs are obtained with a dielectric surface energy close to that of pentacene. This work also bears out our former results on the benefit of a polymer/high- k oxide bilayer dielectric configuration to improve the field effect mobility while keeping a low operating voltage.

Growth related properties of pentacene thin film transistors with different gate dielectrics

We report on the stability of top gated pentacene field effect transistors processed on Kapton™ with Parylene-C as gate dielectric. The influence of bias stress and ambient atmosphere on device characteristics were investigated. Combined influence of moisture and gate bias stress led to an increase of depletion current and subthreshold slope as well as a drift of onset voltage and threshold voltage. We show that devices stressed in the off state exhibit a high stability.

M. Erouel

Papers

Organic thin film transistors with HfO2 high-k gate dielectric grown by anodic oxidation or deposited by sol–gel

Growth related properties of pentacene thin film transistors with different gate dielectrics

Stability of pentacene top gated thin film transistors

Reversibility of humidity effects in pentacene based organic thin-film transistor: Experimental data and electrical modeling

Effect of silver doping on structural and optical properties of In2S3 thin films fabricated by chemical pyrolysis