We have produced ultrathin epitaxial graphite films which show remarkable 2D electron gas (2DEG) behavior. The films, composed of typically 3 graphene sheets, were grown by thermal decomposition on the (0001) surface of 6H-SiC, and characterized by surface-science techniques. The low-temperature conductance spans a range of localization regimes according to the structural state (square resistance 1.5 kOhm to 225 kOhm at 4 K, with positive magnetoconductance). Low resistance samples show characteristics of weak-localization in two dimensions, from which we estimate elastic and inelastic mean free paths. At low field, the Hall resistance is linear up to 4.5 T, which is well-explained by n-type carriers of density 10^{12} cm^{-2} per graphene sheet. The most highly-ordered sample exhibits Shubnikov - de Haas oscillations which correspond to nonlinearities observed in the Hall resistance, indicating a potential new quantum Hall system. We show that the high-mobility films can be patterned via conventional lithographic techniques, and we demonstrate modulation of the film conductance using a top-gate electrode. These key elements suggest electronic device applications based on nano-patterned epitaxial graphene (NPEG), with the potential for large-scale integration.

Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics

Two-dimensional graphene monolayers and bilayers exhibit fascinating electrical transport behaviors. Using infrared spectroscopy, we find that they also have strong interband transitions and that their optical transitions can be substantially modified through electrical gating, much like electrical transport in field-effect transistors. This gate dependence of interband transitions adds a valuable dimension for optically probing graphene band structure. For a graphene monolayer, it yields directly the linear band dispersion of Dirac fermions, whereas in a bilayer, it reveals a dominating van Hove singularity arising from interlayer coupling. The strong and layer-dependent optical transitions of graphene and the tunability by simple electrical gating hold promise for new applications in infrared optics and optoelectronics.

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Gate-Variable Optical Transitions in Graphene

Tuning the band gap and optical spectra of silicon-doped graphene: Many-body effects and excitonic states

We predict the stability of an extended two-dimensional hydrocarbon on the basis of first-principles total-energy calculations. The compound that we call graphane is a fully saturated hydrocarbon derived from a single graphene sheet with formula CH. All of the carbon atoms are in $s{p}^{3}$ hybridization forming a hexagonal network and the hydrogen atoms are bonded to carbon on both sides of the plane in an alternating manner. Graphane is predicted to be stable with a binding energy comparable to other hydrocarbons such as benzene, cyclohexane, and polyethylene. We discuss possible routes for synthesizing graphane and potential applications as a hydrogen storage material and in two-dimensional electronics.

M. Houmad

Papers

Optical conductivity enhancement and band gap opening with silicon doped graphene

First-principles study of BC3 monolayer as anodes for lithium-ion and sodium-ion batteries applications

First-principles calculations of rare earth (RE=Tm, Yb, Ce) doped ZnO: Structural, optoelectronic, magnetic, and electrical properties

Optical properties of SiC nanosheet

Ab-initio study of magnetism behavior in TiO2 semiconductor with structural defects