M
M. J. L. Sangster
Publications - 6
Citations - 181
M. J. L. Sangster is an academic researcher. The author has contributed to research in topics: Molecular beam epitaxy & Absorption spectroscopy. The author has an hindex of 5, co-authored 6 publications receiving 181 citations.
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The calibration of the strength of the localized vibrational modes of silicon impurities in epitaxial GaAs revealed by infrared absorption and Raman scattering
Ray Murray,R C Newman,M. J. L. Sangster,R. B. Beall,J. J. Harris,P. J. Wright,J. Wagner,M. Ramsteiner +7 more
TL;DR: In this paper, the Hall effect and the strength of localized vibrational modes (LVM) of silicon impurities using both Fourier transform absorption spectroscopy and Raman scattering at an excitation energy of 3 eV close to the E1 band gap were investigated.
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The lattice sites of carbon in highly doped AlAs:C grown by molecular beam epitaxy
B. R. Davidson,R.C. Newman,D. A. Robbie,M. J. L. Sangster,Joachim Wagner,Albrecht Fischer,K. H. Ploog +6 more
TL;DR: In this paper, a localized vibrational model at 634 cm-1 has been found for carbon-doped AlAs, and a comparison with a two-parameter Keating cluster model has been made.
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Host and impurity isotope effects on local vibrational modes of GaAs:CAs and GaAs:BAs
TL;DR: In this article, a high-resolution FTIR transmission spectra for the fine structure of local vibrational modes associated with 10B, 11B and 12C impurities in GaAs is presented.
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A local vibrational mode investigation of p‐type Si‐doped GaAs
M. J. Ashwin,M. R. Fahy,R.C. Newman,Joachim Wagner,D. A. Robbie,M. J. L. Sangster,I. Silier,E. Bauser,Wolfgang Braun,K. H. Ploog +9 more
TL;DR: In this paper, an analysis of a closely compensated LPE sample indicated that an existing calibration factor for the SiAs LVM (399 cm−1) relating the integrated absorption coefficient (IA) to the concentration [SiAs] should be increased by 40%, so that IA=1 cm−2 corresponds to 7×1016 cm−3.