From molecules to crystal engineering: supramolecular isomerism and polymorphism in network solids.

Instrumental observations1,2 and reconstructions3,4 of global and hemispheric temperature evolution reveal a pronounced warming during the past ∼150 years. One expression of this warming is the observed increase in the occurrence of heatwaves5,6. Conceptually this increase is understood as a shift of the statistical distribution towards warmer temperatures, while changes in the width of the distribution are often considered small7. Here we show that this framework fails to explain the record-breaking central European summer temperatures in 2003, although it is consistent with observations from previous years. We find that an event like that of summer 2003 is statistically extremely unlikely, even when the observed warming is taken into account. We propose that a regime with an increased variability of temperatures (in addition to increases in mean temperature) may be able to account for summer 2003. To test this proposal, we simulate possible future European climate with a regional climate model in a scenario with increased atmospheric greenhouse-gas concentrations, and find that temperature variability increases by up to 100%, with maximum changes in central and eastern Europe.

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The role of increasing temperature variability in European summer heatwaves

"Quantum sensing" describes the use of a quantum system, quantum properties or quantum phenomena to perform a measurement of a physical quantity Historical examples of quantum sensors include magnetometers based on superconducting quantum interference devices and atomic vapors, or atomic clocks More recently, quantum sensing has become a distinct and rapidly growing branch of research within the area of quantum science and technology, with the most common platforms being spin qubits, trapped ions and flux qubits The field is expected to provide new opportunities - especially with regard to high sensitivity and precision - in applied physics and other areas of science In this review, we provide an introduction to the basic principles, methods and concepts of quantum sensing from the viewpoint of the interested experimentalist

Quantum sensing

The electronic structure of graphene causes its charge carriers to behave like relativistic particles. For a perfect graphene sheet free from impurities and disorder, the Fermi energy lies at the so-called ‘Dirac point’, where the density of electronic states vanishes. But in the inevitable presence of disorder, theory predicts that equally probable regions of electron-rich and hole-rich puddles will arise. These puddles could explain graphene’s anomalous non-zero minimal conductivity at zero average carrier density. Here, we use a scanning single-electron transistor to map the local density of states and the carrier density landscape in the vicinity of the neutrality point. Our results confirm the existence of electron–hole puddles, and rule out extrinsic substrate effects as explanations for their emergence and topology. Moreover, we find that, unlike non-relativistic particles the density of states can be quantitatively accounted for by considering non-interacting electrons and holes.

/pdf/observation-of-electron-hole-puddles-in-graphene-using-a-ouoz2m91qr.pdf

Observation of electron–hole puddles in graphene using a scanning single-electron transistor

The goal of this paper is to review in brief the basic physics of single-election devices, as well as their-current and prospective applications. These devices based on the controllable transfer of single electrons between small conducting "islands", have already enabled several important scientific experiments. Several other applications of analog single-election devices in unique scientific instrumentation and metrology seem quite feasible. On the other hand, the prospect of silicon transistors being replaced by single-electron devices in integrated digital circuits faces tough challenges and remains uncertain. Nevertheless, even if this replacement does not happen, single electronics will continue to play an important role by shedding light on the fundamental size limitations of new electronic devices. Moreover, recent research in this field has generated some by-product ideas which may revolutionize random-access-memory and digital-data-storage technologies.

Single-electron devices and their applications

A single-electron transistor scanning electrometer (SETSE)—a scanned probe microscope capable of mapping static electric fields and charges with 100-nanometer spatial resolution and a charge sensitivity of a small fraction of an electron—has been developed. The active sensing element of the SETSE, a single-electron transistor fabricated at the end of a sharp glass tip, is scanned in close proximity across the sample surface. Images of the surface electric fields of a GaAs/AlxGa1−xAs heterostructure sample show individual photo-ionized charge sites and fluctuations in the dopant and surface-charge distribution on a length scale of 100 nanometers. The SETSE has been used to image and measure depleted regions, local capacitance, band bending, and contact potentials at submicrometer length scales on the surface of this semiconductor sample.

https://science.sciencemag.org/content/sci/276/5312/579.full.pdf

Scanning Single-Electron Transistor Microscopy: Imaging Individual Charges

Scanning Single Electron Transistor Microscopy: Imaging Individual Charges

Microscopy with a single electron transistor probe

We describe the single-electron transistor scanning electrometer (SETSE), a novel scanned probe microscope capable of mapping static electric fields and charges with submicron (100 nm) spatial resolution and fractional electron charge sensitivity (0.01e). The active sensing element of the SETSE is a single-electron transistor fabricated at the end of a sharp glass tip. Images of the surface electric fields of a GaAs/AlGaAs heterostructure sample taken before and after brief exposures to light show individual photoionized charge sites as well as 100 nm length scale fluctuations in the dopant and surface charge distribution. We also describe SETSE images and measurements of depleted regions, local capacitance, band bending, and work functions at submicron length scales on the surface of this model semiconductor device.

M. J. Yoo

Papers

Scanning Single-Electron Transistor Microscopy: Imaging Individual Charges

Scanning Single Electron Transistor Microscopy: Imaging Individual Charges

Microscopy with a single electron transistor probe

Scanning single-electron transistor microscopy: Imaging individual charges