T
T.A Fulton
Researcher at Alcatel-Lucent
Publications - 9
Citations - 568
T.A Fulton is an academic researcher from Alcatel-Lucent. The author has contributed to research in topics: Quantum Hall effect & Electron density. The author has an hindex of 5, co-authored 9 publications receiving 540 citations.
Papers
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Journal ArticleDOI
Scanning Single-Electron Transistor Microscopy: Imaging Individual Charges
M. J. Yoo,T.A Fulton,H. F. Hess,R. L. Willett,L. N. Dunkleberger,R. J. Chichester,Loren Pfeiffer,K. W. West +7 more
TL;DR: The SETSE has been used to image and measure depleted regions, local capacitance, band bending, and contact potentials at submicrometer length scales on the surface of this semiconductor sample.
Journal ArticleDOI
Electrical imaging of the quantum Hall state
TL;DR: In this article, microscopic images of the local electron compressibility, electrostatic potential, and current-induced Hall voltage of a two-dimensional sheet of electrons in the quantum Hall regime are acquired using a single-electron transistor as a scanned probe.
Journal ArticleDOI
Imaging of localized electronic states in the quantum Hall regime
Nikolai B. Zhitenev,T.A Fulton,Amir Yacoby,Amir Yacoby,H. F. Hess,L. N. Pfeiffer,Ken W. West +6 more
TL;DR: This work searches for localized potential signals, at numerous locations, that oscillate with changing electron density, using a scanning electrometer probe and observes objects that interact, and at times form a lattice-like arrangement.
Proceedings ArticleDOI
Scanning Single Electron Transistor Microscopy: Imaging Individual Charges
M. J. Yoo,T.A Fulton,H. F. Hess,R. L. Willett,L. N. Dunkleberger,R. J. Chichester,Loren Pfeiffer,K. W. West +7 more
TL;DR: The single-electron transistor scanning electrometer (SETSEEM) as mentioned in this paper is a probe microscope capable of mapping static electric fields and charges with 100-nanometer spatial resolution and a charge sensitivity of a small fraction of an electron.
Journal ArticleDOI
Microscopy with a single electron transistor probe
TL;DR: In this paper, the coulomb blockade effect of a single electron transistor was harnessed to make an electrometer probe capable of imaging electric properties of a sample at 100 nm resolution.