M
M. Jeng
Researcher at University of California, Berkeley
Publications - 7
Citations - 258
M. Jeng is an academic researcher from University of California, Berkeley. The author has contributed to research in topics: Low voltage & Field-effect transistor. The author has an hindex of 7, co-authored 7 publications receiving 249 citations.
Papers
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Journal ArticleDOI
Deep-submicrometer MOS device fabrication using a photoresist-ashing technique
TL;DR: In this paper, a photoresist-ashing process was developed which, when used in conjunction with conventional g-line optical lithography, permits the controlled definition of deep-submicrometer features.
Journal ArticleDOI
Low-voltage hot-electron currents and degradation in deep-submicrometer MOSFETs
TL;DR: In this paper, the maximum allowable power supply voltage to insure a 10-year device lifetime was determined as a function of channel length (down to 0.15 mu m) and oxide thicknesses.
Proceedings ArticleDOI
Hot-electron currents in deep-submicrometer MOSFETs
TL;DR: In this paper, a comprehensive study of hot-electron-induced substrate and gate currents in deep-submicrometer MOSFETs is presented, where the authors consider the finite depth of the current path and current-crowding-induced weak gain control.
Journal ArticleDOI
Intrinsic transconductance extraction for deep-submicrometer MOSFETs
TL;DR: In this article, a simple procedure to correct or avoid the source-drain resistance asymmetry was proposed using deep-submicrometer devices, and experimental results that demonstrate the severity of the potential error and verify the applicability of the proposed technique are presented.
Proceedings ArticleDOI
Design guidelines for deep-submicrometer MOSFETs
TL;DR: In this paper, a comprehensive study of the performance and reliability constraints on the dimensions and power supply of deep-submicrometer non-LDD (lightly doped drain) n-channel MOSFETs is presented.