A packaged light emitting device. The device includes a substrate member comprising a surface region and one or more light emitting diode devices overlying the surface region. In a specific embodiment, at least one of the light emitting diode device is fabricated on a semipolar or nonpolar GaN containing substrate. The one or more light emitting diode devices are fabricated on the semipolar or nonpolar GaN containing substrate emits substantially polarized emission of one or more first wavelengths. At least at least one of the light emitting diode devices comprise a quantum well region, which is characterized by an electron wave function and a hole wave function. In a specific embodiment, the electron wave function and the hole wave function are substantially overlapped within a predetermined spatial region of the quantum well region. In a specific embodiment, the device has a thickness of one or more entities formed overlying the one or more light emitting diode devices. The one or more entities are excited by the substantially polarized emission and emitting electromagnetic radiation of one or more second wavelengths.

White light devices using non-polar or semipolar gallium containing materials and phosphors

The present invention is directed to display technologies. More specifically, various embodiments of the present invention provide projection display systems where one or more laser diodes are used as light source for illustrating images. In one set of embodiments, the present invention provides projector systems that utilize blue and/or green laser fabricated using gallium nitride containing material. In another set of embodiments, the present invention provides projection systems having digital lighting processing engines illuminated by blue and/or green laser devices. In one embodiment, the present invention provides a 3D display system. There are other embodiments as well.

Laser based display method and system

Bulk ammonothermal GaN

Despite the rapid commercialization of III-nitride semiconductor devices for applications in visible and ultraviolet optoelectronics and in high-power and high-frequency electronics, their full potential is limited by two primary obstacles: i) a high defect density and biaxial strain due to the heteroepitaxial growth on foreign substrates, which result in lower performance and shortened device lifetime, and ii) a strong built-in electric field due to spontaneous and piezoelectric polarization in the wurtzite structures along the well-established [0001] growth direction for nitrides. Recent advances in the research, development, and commercial production of native GaN substrates with low defect density and high structural and optical quality have opened opportunities to overcome both of these obstacles and have led to significant progress in the development of several optoelectronic and high-power devices. In this paper, the recent achievements in bulk GaN growth development using different approaches are reviewed; comparison of the bulk materials grown in different directions is made; and the current achievements in device performance utilizing native GaN substrate material are summarized.

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GaN Substrates for III-Nitride Devices

A method for large-scale manufacturing of gallium nitride boules. Large-area single crystal seed plates are suspended in a rack, placed in a large diameter autoclave or internally-heated high pressure apparatus along with ammonia and a mineralizer, and grown ammonothermally. The seed orientation and mounting geometry are chosen to provide efficient utilization of the seed plates and of the volume inside the autoclave or high pressure apparatus. The method is scalable up to very large volumes and is cost effective.

M. Lesczynski

Papers

Bulk GaN crystal growth by the high-pressure ammonothermal method