E
E.B. Kaminsky
Researcher at General Electric
Publications - 12
Citations - 345
E.B. Kaminsky is an academic researcher from General Electric. The author has contributed to research in topics: MESFET & Cathodoluminescence. The author has an hindex of 8, co-authored 12 publications receiving 339 citations.
Papers
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Journal ArticleDOI
Bulk GaN crystal growth by the high-pressure ammonothermal method
Mark Philip D'evelyn,Huicong Hong,Dong-Sil Park,H. Lu,E.B. Kaminsky,R.R. Melkote,Piotr Perlin,M. Lesczynski,S. Porowski,Richard J. Molnar +9 more
TL;DR: In this paper, an overview of the high pressure ammonothermal method developed by GE, based on adaptation of high pressure apparatus developed for diamond growth, together with appropriate raw materials and methods.
Journal ArticleDOI
Microwave power SiC MESFETs and GaN HEMTs
A.P. Zhang,Larry B. Rowland,E.B. Kaminsky,James W. Kretchmer,Richard Alfred Beaupre,J. L. Garrett,Jesse B. Tucker,B.J. Edward,J. Foppes,A.F. Allen +9 more
TL;DR: In this paper, the authors have fabricated SiC metal semiconductor field effect transistors (MESFETs) with more than 60 W of output power at 450 MHz from single 21.6 mm gate periphery devices (2.9 W/mm) and 27 W at 3 GHz from single 14.4 mm SiC MES-FET devices (1.9W/mm), and demonstrated more than 6.7 W /mm CW power from 400 μm GaN/AlGaN high electron mobility transistors devices for X band (10 GHz) applications
Journal ArticleDOI
9.2 W/mm (13.8 W) AlGaN/GaN HEMTs at 10 GHz and 55 V drain bias
A.P. Zhang,Larry B. Rowland,E.B. Kaminsky,J.B. Tucker,J.W. Kretchmer,A.F. Allen,J. Cook,B.J. Edward +7 more
TL;DR: In this paper, a 9.1.5 mm gate periphery AlGaN/GaN HEMT was fabricated and tested at 10 GHz under pulsed conditions without active cooling.
Journal ArticleDOI
Cathodoluminescence mapping and selective etching of defects in bulk GaN
TL;DR: In this paper, a strong correlation between CCL mapping and selective-etching techniques for revealing defects in the bulk GaN was demonstrated, and the clear correlation established in this comparative study provides strong support for the viability of using both techniques for evaluating bulk GAN.
Journal ArticleDOI
Identification of subsurface damage in freestanding HVPE GaN substrates and its influence on epitaxial growth of GaN epilayers
J. R. Grandusky,Vibhu Jindal,Neeraj Tripathi,Fatemeh Shahedipour-Sandvik,H. Lu,E.B. Kaminsky,R.R. Melkote +6 more
TL;DR: In this article, the effects of starting surfaces, and subsurface characteristics, on the epitaxial growth of GaN thin films were investigated. But the results were limited to the GaN-thin film.