Journal ArticleDOI
Bulk GaN crystal growth by the high-pressure ammonothermal method
Mark Philip D'evelyn,Huicong Hong,Dong-Sil Park,H. Lu,E.B. Kaminsky,R.R. Melkote,Piotr Perlin,M. Lesczynski,S. Porowski,Richard J. Molnar +9 more
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TLDR
In this paper, an overview of the high pressure ammonothermal method developed by GE, based on adaptation of high pressure apparatus developed for diamond growth, together with appropriate raw materials and methods.About:
This article is published in Journal of Crystal Growth.The article was published on 2007-03-01. It has received 167 citations till now. The article focuses on the topics: Wafering & Gallium nitride.read more
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Patent
White light devices using non-polar or semipolar gallium containing materials and phosphors
TL;DR: In this paper, a package light-emitting diode (LED) device is presented, which includes a substrate member comprising a surface region and one or more light emitting diode devices overlying the surface region.
Patent
Laser based display method and system
James W. Raring,Paul Rudy +1 more
TL;DR: In this article, the authors present a projection display system where one or more laser diodes are used as a light source for illustrating images, using gallium nitride containing material.
Journal ArticleDOI
Bulk ammonothermal GaN
Robert Dwilinski,Roman Doradzinski,Jerzy Garczynski,Leszek Sierzputowski,A. Puchalski,Yasuo Kanbara,K. Yagi,H. Minakuchi,H. Hayashi +8 more
TL;DR: In this paper, results of structural characterization of high-quality ammonothermal GaN are presented, and the most interesting feature seems perfect flatness of the crystal lattice of studied crystals.
Journal ArticleDOI
GaN Substrates for III-Nitride Devices
TL;DR: The recent achievements in bulk GaN growth development using different approaches are reviewed; comparison of the bulk materials grown in different directions is made; and the current achievements in device performance utilizing native GaN substrate material are summarized.
Patent
Process for large-scale ammonothermal manufacturing of gallium nitride boules
TL;DR: In this paper, a method for large-scale manufacturing of gallium nitride boules is described, where large-area single crystal seed plates are suspended in a rack, placed in a large diameter autoclave or internally-heated high pressure apparatus along with ammonia and a mineralizer, and grown ammonothermally.
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Journal ArticleDOI
Interactions of hydrogen with native defects in gan
TL;DR: In this article, the atomic and electronic structure of hydrogen-vacancy complexes in GaN was investigated with pseudopotential-density-functional calculations, and the formation energies provided information about the likelihood of incorporation of these complexes in $n-type and $p$-type material, and binding energies provided a measure for the dissociation energy.
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Thermodynamic Properties of Ammonia
Lester Haar,J. S. Gallagher +1 more
TL;DR: In this paper, an analytic thermodynamic surface has been fitted to the experimental data for ammonia for the temperature range extending from the triple point to 750 kelvins and for the pressure range for the dilute gas to 500 MPa (5000 bar) values for the thermodynamic properties are tabulated at closely spaced intervals.
Journal ArticleDOI
Crystal growth of gallium nitride in supercritical ammonia
D. R. Ketchum,Joseph W. Kolis +1 more
TL;DR: In this paper, single crystals of gallium nitride were grown in supercritical ammonia at 400°C and 2.4 kbar, and two different crystal morophologies were obtained; rods and hexagonal plates.
Journal ArticleDOI
Low‐friction cell for piston‐cylinder high‐pressure apparatus
TL;DR: In this article, a high-temperature cell was developed in which a weak salt such as NaCl is used as a pressure medium and the behavior of the cell was studied in detail by observing the melting temperature of metals by dta over the range 10-60 kbar and 300°-1400°C.
Journal ArticleDOI
Crystal growth of GaN by ammonothermal method
TL;DR: In this article, the authors showed that GaN crystal can be grown by ammonothermal method using NH 4 Cl mineralizer using inner wall of autoclave is covered with Pt so as to prevent possible contamination from auto-clave.