This paper presents a survey on existing methods for fault diagnosis and protection of insulated gate bipolar transistors with special focus on those used in three-phase power inverters. Twenty-one methods for open-circuit faults and ten methods for short-circuit faults are evaluated and summarized, based on their performance and implementation efforts. The gate-misfiring faults and their diagnostic methods are also briefly discussed. Finally, the promising methods are recommended for future work.

A Literature Review of IGBT Fault Diagnostic and Protection Methods for Power Inverters

This paper presents a survey on existing methods for fault diagnosis and protection of IGBT's, with special focus on those used in three-phase power inverters. Twenty one methods for open-circuit faults and ten methods for short-circuit faults are evaluated and summarized, based on their performance and implementation efforts. The gate-misfiring faults and their diagnostic methods are also briefly discussed. Finally, the promising methods are recommended for future work.

As the characteristics of insulted gate transistors [like metal–oxide–semiconductor field-effect transistors and insulated gate bipolar transistors (IGBTs)] have been constantly improving, their utilization in power converters operating at higher and higher frequencies has become more common. However, this, in turn, leads to fast current and voltage transitions that generate large amounts of electromagnetic interferences over wide frequency ranges. In this paper, a new active gate voltage control (AGVC) method is presented. It allows us to control the values of at turn-on and at turn-off for insulated gate power transistors, by acting directly on the input gate voltage shape. In an elementary switching cell, it enables us to strongly reduce over-current generated by the reverse recovery of the free-wheeling diode at turn-on, and oscillations of the output voltage across the transistor at turn-off. In the following sections, the AGVC in open and closed-loop for IGBT is presented, and its performance is compared with that of a more conventional method, i.e., increasing the gate resistance. Robustness of the AGVC is estimated under variations of dc-voltage supply and transistor switched current.

Active gate voltage control of turn-on di/dt and turn-off dv/dt in insulated gate transistors

Superjunction has arguably been the most creative and important concept in the power device field since the introduction of the insulated gate bipolar transistor (IGBT) in the 1980s. It is the only concept known today that has challenged and ultimately proved wrong the well-known theoretical study on the limit of silicon in high-voltage devices. This paper deals with the history, device and process development, and the future prospects of Superjunction technologies. It covers fundamental physics, technological challenges as well as aspects of design and modeling of unipolar devices, such as CoolMOS. The superjunction concept is compared to other methods of enhancing the conductivity of power devices (from bipolar to employment of wide-bandgap materials) to derive its set of benefits and limitations. This paper closes with the application of the superjunction concept to other structures or materials, such as terminations, superjunction IGBTs, or silicon carbide Field Effect Transistors (FETs).

Superjunction Power Devices, History, Development, and Future Prospects

This paper presents an active gate driver (AGD) for IGBT modules to improve their overall performance under normal condition as well as fault condition. Specifically, during normal switching transients, a di/dt feedback controlled current source and current sink is introduced together with a push-pull buffer for dynamic gate current control. Compared to a conventional gate drive strategy, the proposed one has the capability of reducing the switching loss, delay time, and Miller plateau duration during turn-on and turn-off transient without sacrificing current and voltage stress. Under overcurrent condition, it provides a fast protection function for IGBT modules based on the evaluation of fault current level through the di/dt feedback signal. Moreover, the AGD features flexible protection modes, which overcomes the interruption of converter operation in the event of momentary short circuits. A step-down converter is built to evaluate the performance of the proposed driving schemes under various conditions, considering variation of turn-on/off gate resistance, current levels, and short-circuit fault types. Experimental results and detailed analysis are presented to verify the feasibility of the proposed approach.

A di/dt Feedback-Based Active Gate Driver for Smart Switching and Fast Overcurrent Protection of IGBT Modules

MOSFETs and insulated gate bipolar transistor (IGBT) devices are increasingly used in electronic circuits due to both their easy driving and ability to handle high currents and voltages at high-switching frequencies. This paper deals with a new driver technique that allows optimization of the switching speed, reduction of the energy losses during the switching time, and limitation of the electromagnetic interference (EMI). First, an analysis of voltage- and current-switching waveforms of gate-insulated devices is performed. Then, a method of controlling voltage and current slopes independently is shown using the "one-cycle" method or a suitable adaptive-driving technique based on a phase-locked loop (PLL) approach. These techniques were adopted in order to allow correct generation of the gate signals regardless of the operating conditions. Finally, practical results of the proposed driving circuit obtained using a single IGBT switch chopper are presented.

Switching-behavior improvement of insulated gate-controlled devices

IGBT devices are increasingly used in power electronic equipment due to their high power handling capability. This paper deals with the problems that concern the turn-on, turn-off, and short-circuit of these devices. An optimal new driving circuit is proposed which gives excellent device output performances. Experimental oscillogram traces of transient condition tests are given, which demonstrate the advantages of using the new driving circuit. The suitability of the driving circuit for integration is analyzed. >

A new driving circuit for IGBT devices

In the field of power electronics, the use of series-connected insulated gate devices, such as insulated gate bipolar transistors or power MOSFETs, is interesting in order to obtain fast and efficient power switches in medium-range power converters. In this kind of application, the control of the voltage sharing across the series strings of devices is an important aspect to be considered. The proposed technique allows obtaining safe commutations of the switches by simple and effective control circuits acting on the gate side of the power devices. In particular, the gate drive units are arranged in order to ensure good performance during the switching transients, while preventing overvoltage peaks on the devices. Both the design criteria and analysis of the control circuit are developed. Several experimental tests are reported in order to demonstrate the validity and correctness of the proposed approach.

Control of the switching transients of IGBT series strings by high-performance drive units

Insulated gate devices, such as metal oxide semiconductor field effect transistors (MOSFETs) or insulated gate bipolar transistors (IGBTs), are increasingly used in high-voltage power converters where a request for fast power switches is growing. Series connection of devices is a viable approach to manage voltages higher than the blocking voltage of the single device. The main problem in such an application is to guarantee the voltage balance across the devices both in steady-state and during switching transients. In this paper, a novel approach is presented, which is used to equalize the voltage sharing during the switching transients. The main advantages of the proposed method consist in avoiding the traditional use of the snubber capacitors, in the output power side, and in working on the gate side. The application of the proposed gate drive technique is firstly discussed and compared with different solutions, hence, validated by experimental tests applied to the control of series connected devices. Finally, a comparison is performed between the transient behaviors of two different configurations: a single switch with high-voltage blocking capability, and in alternative a series of two devices which together ensure the voltage blocking capability of the single switch. The better performances of the latter configuration, working with the proposed control circuit, over the former have been experimentally demonstrated.

Snubberless voltage sharing of series-connected insulated-gate devices by a novel gate control strategy

MOSFETs and IGBTs devices are increasingly used in electronic circuits due to both the easy driving and the capability to handle high currents and voltages at high switching frequencies. This paper deals with a new driver circuit that allows optimisation of the switching speed, reduction of the energy losses during the switching time, and limiting of the electromagnetic interference (EMI). Firstly an analysis of voltage and current switching waveforms of gate insulated devices is performed. Hence, it is shown how to control voltage and current slopes independently by using a suitable adaptive driving technique based on a PLL approach. Such a technique has been adapted in order to correctly generate the gate signals regardless of the operating conditions. Finally, practical tests of the proposed driving circuit obtained using a single switch converter and IGBT devices are reported. >

M. Melito

Papers

Switching-behavior improvement of insulated gate-controlled devices

A new driving circuit for IGBT devices

Control of the switching transients of IGBT series strings by high-performance drive units

Snubberless voltage sharing of series-connected insulated-gate devices by a novel gate control strategy

A new adaptive driving technique for high current gate controlled devices