Photoinduced reactivity of titanium dioxide

CARBON exhibits a unique ability to form a wide range of structures. In an inert atmosphere it condenses to form hollow, spheroidal fullerenes. Carbon deposited on the hot tip of the cathode of the arc-discharge apparatus used for bulk fullerene synthesis will form nested graphitic tubes and polyhedral particles. Electron irradiation of these nanotubes and polyhedra transforms them into nearly spherical carbon 'onions'. We now report that covaporizing carbon and cobalt in an arc generator leads to the formation of carbon nanotubes which all have very small diameters (about 1.2 nm) and walls only a single atomic layer thick. The tubes form a web-like deposit woven through the fullerene-containing soot, giving it a rubbery texture. The uniformity and single-layer structure of these nanotubes should make it possible to test their properties against theoretical predictions.

Cobalt-catalysed growth of carbon nanotubes with single-atomic-layer walls

In the past ten years we have witnessed a revival of, and subsequent rapid expansion in, the research on zinc oxide (ZnO) as a semiconductor. Being initially considered as a substrate for GaN and related alloys, the availability of high-quality large bulk single crystals, the strong luminescence demonstrated in optically pumped lasers and the prospects of gaining control over its electrical conductivity have led a large number of groups to turn their research for electronic and photonic devices to ZnO in its own right. The high electron mobility, high thermal conductivity, wide and direct band gap and large exciton binding energy make ZnO suitable for a wide range of devices, including transparent thin-film transistors, photodetectors, light-emitting diodes and laser diodes that operate in the blue and ultraviolet region of the spectrum. In spite of the recent rapid developments, controlling the electrical conductivity of ZnO has remained a major challenge. While a number of research groups have reported achieving p-type ZnO, there are still problems concerning the reproducibility of the results and the stability of the p-type conductivity. Even the cause of the commonly observed unintentional n-type conductivity in as-grown ZnO is still under debate. One approach to address these issues consists of growing high-quality single crystalline bulk and thin films in which the concentrations of impurities and intrinsic defects are controlled. In this review we discuss the status of ZnO as a semiconductor. We first discuss the growth of bulk and epitaxial films, growth conditions and their influence on the incorporation of native defects and impurities. We then present the theory of doping and native defects in ZnO based on density-functional calculations, discussing the stability and electronic structure of native point defects and impurities and their influence on the electrical conductivity and optical properties of ZnO. We pay special attention to the possible causes of the unintentional n-type conductivity, emphasize the role of impurities, critically review the current status of p-type doping and address possible routes to controlling the electrical conductivity in ZnO. Finally, we discuss band-gap engineering using MgZnO and CdZnO alloys.

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Fundamentals of zinc oxide as a semiconductor

5.1. Nanoalloys of Group 11 (Cu, Ag, Au) 865 5.1.1. Cu−Ag 866 5.1.2. Cu−Au 867 5.1.3. Ag−Au 870 5.1.4. Cu−Ag−Au 872 5.2. Nanoalloys of Group 10 (Ni, Pd, Pt) 872 5.2.1. Ni−Pd 872 * To whom correspondence should be addressed. Phone: +39010 3536214. Fax:+39010 311066. E-mail: ferrando@fisica.unige.it. † Universita di Genova. ‡ Argonne National Laboratory. § University of Birmingham. | As of October 1, 2007, Chemical Sciences and Engineering Division. Volume 108, Number 3

Nanoalloys: From Theory to Applications of Alloy Clusters and Nanoparticles

A surface science perspective on TiO2 photocatalysis

A method to grow carbon microtubules with fullerene structure (buckytubes) has been identified. The method consists of the catalytic decomposition of acetylene over iron particles at 700 °C. Carbon microtubules of up to 50 μm in length are synthesized by this method. Electron diffraction and high resolution electron microscopy studies demonstrate that the structure of these microtubules corresponds to the helical structure recently reported by S. Iijima, Nature 354, 56(1991), prepared using an arc‐discharge evaporation method.

Catalytic growth of carbon microtubules with fullerene structure

Growth, structure and optical characterization of high quality ZnO thin films obtained by spray pyrolysis

Influence of Al, In, Cu, Fe and Sn dopants on the response of thin film ZnO gas sensor to ethanol vapour

Novel Al-based nanocomposites reinforced with multi-walled carbon nanotubes were produced by mechanical milling. Next, pressure-less sintering at 823 K under vacuum and hot extrusion at 773 K were carried out. The interface between Al matrix and the multi-walled carbon nanotubes was examined using transmission electron microscopy. The values of yield strength (σy), maximum strength (σmax) and microhardness Vickers (HVN) of the composites were evaluated and reported as a function of carbon nanotubes content. The concentration of multi-walled carbon nanotubes has an important effect on the mechanical properties of the nanocomposite. Formation of aluminum carbide in the nanocomposites was observed. Possible strengthening mechanisms are presented and discussed.

M. Miki-Yoshida

Papers

Catalytic growth of carbon microtubules with fullerene structure

Growth, structure and optical characterization of high quality ZnO thin films obtained by spray pyrolysis

Influence of Al, In, Cu, Fe and Sn dopants on the response of thin film ZnO gas sensor to ethanol vapour

Microstructural and mechanical characterization of Al–MWCNT composites produced by mechanical milling

Novel Al-matrix nanocomposites reinforced with multi-walled carbon nanotubes