2.3. Medical Devices and Sensors 9 2.4. Radio Frequency Applications 10 3. Materials 12 3.1. Organic Electronics Materials 12 3.2. Semiconducting Polymer Design 13 3.3. Poly(3-alkylthiophenes) 14 3.4. Poly(thieno(3,2-b)thiophenes 15 3.5. Benchmark Polymer Semiconductors 15 3.6. High Performance Polymer Semiconductors 15 4. Device Stability 16 4.1. Bias Stress in Organic Transistors 17 4.1.1. Bias Stress Characterization 17 4.1.2. Bias Stress Mechanism 18 4.2. Short Channel Effects in Organic Transistors 19 5. Materials Patterning and Integration 20 6. Conclusions 22 7. Acknowledgments 22 8. References 22

Materials and applications for large area electronics: solution-based approaches.

Layered metal dichalcogenide materials are a family of semiconductors with a wide range of energy band gaps and properties, and potential to open up new areas of physics and technology applications. However, obtaining high crystal quality thin films over a large area remains a challenge. Here we show that chemical vapor deposition (CVD) can be used to achieve large area electronic grade single crystal Molybdenum Disulfide (MoS2) thin films with the highest mobility reported in CVD grown films so far. Growth temperature and choice of substrate were found to critically impact the quality of film grown, and high temperature growth on (0001) orientated sapphire yielded highly oriented single crystal MoS2 films for the first time. Films grown under optimal conditions were found to be of high structural quality from high-resolution X-ray diffraction, transmission electron microscopy, and Raman measurements, approaching the quality of reference geological MoS2. Photoluminescence and electrical measurements confirmed the growth of optically active MoS2 with a low background carrier concentration, and high mobility. The CVD method reported here for the growth of high quality MoS2 thin films paves the way towards growth of a variety of layered 2D chalcogenide semiconductors and their heterostructures.

Large Area Single Crystal (0001) Oriented MoS2 Thin Films

We describe local (∼150 nm resolution), quantitative measurements of charge carrier mobility in conjugated polymer films that are commonly used in thin-film transistors and nanostructured solar cel...

Space charge limited current measurements on conjugated polymer films using conductive atomic force microscopy.

Layered metal dichalcogenide materials are a family of semiconductors with a wide range of energy band gaps and properties, the potential for exciting physics and technology applications. However, obtaining high crystal quality thin films over a large area remains a challenge. Here we show that chemical vapor deposition (CVD) can be used to achieve large area single crystal Molybdenum Disulfide (MoS2) thin films. Growth temperature and choice of substrate were found to critically impact the quality of film grown, and high temperature growth on (0001) oriented sapphire yielded highly oriented single crystal MoS2 films. Films grown under optimal conditions were found to be of high structural quality from high-resolution X-ray diffraction, transmission electron microscopy, and Raman measurements, approaching the quality of reference geological MoS2. Photoluminescence and electrical measurements confirmed the growth of optically active MoS2 with a low background carrier concentration, and high mobility. The CVD method reported here for the growth of high quality MoS2 thin films paves the way towards growth of a variety of layered 2D chalcogenide semiconductors and their heterostructures.

Large area single crystal (0001) oriented MoS2

Monte Carlo simulation of photon migration in tissue was used to assess the sampling depth, measuring depth and photon pathlength in laser Doppler flowmetry. The median sampling depth and photon pathlength in skin, liver and brain tissue were calculated for different probe geometries. The shallowest median sampling depth found was 68 μm for a 120 μm diameter single fibre probe applied to a one-layered skin tissue model. By using separate transmitting and receiving fibres, the median sampling depth, which amounted to 146 μm for a 250 μm fibre centre separation, by be successively increased to 233 μm when the fibres' centres are separated by 700 μm. Total photon pathlength and thereby the number of multiple Doppler shifts increase with fibre separation, thus favouring the choice of a probe with a small fibre separation when linearity is more important than a large sampling depth. Owing mainly to differences in the tissue g-value and scattering coefficient, the median sampling depth is shallower for liver and deeper for brain, in comparison with skin tissue. For skin tissue, the influence on the sampling depth of a homogeneously distributed blood volume was found to be limited to about 1 per cent per percentage increase in tissue blood content, and may, therefore, be disregarded in most practical situations. Simulations show that the median measuring depth is strongly dependent on the perfusion profile.

Prediction of sampling depth and photon pathlength in laser Doppler flowmetry

Space-charge-limited current is considered in a thin-film n-i-n diode. It is assumed that impenetrable barriers limit the current flow to a film of thickness D. Because the electric field of injected electrons spreads out of the film, the level of injection is substantially higher than in the bulk case described by the classical Mott-Gurney law. As a consequence, the current density in a thin diode can be an order of magnitude larger than in a bulk diode of the same length. It is shown that, in the limit of small D, the total current is independent of D because the decreasing film thickness is exactly compensated by increasing injection. In this limit analytic expressions of the current-voltage characteristics are obtained for several model electrode configurations. The analytic results are confirmed by a numerical simulation of the diode within a drift-diffusion model assuming a field-independent mobility. The numerical results also describe a transition with decreasing D from the Mott-Gurney law to the new law governing space-charge-limited current in a film. >

M.R. Pinto

Papers

Space-charge-limited current in a film