M
M. R. Ramesh
Researcher at National Institute of Technology, Karnataka
Publications - 16
Citations - 255
M. R. Ramesh is an academic researcher from National Institute of Technology, Karnataka. The author has contributed to research in topics: Ultimate tensile strength & Aluminium. The author has an hindex of 5, co-authored 10 publications receiving 143 citations.
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Adsorption and photocatalytic properties of NiO nanoparticles synthesized via a thermal decomposition process
TL;DR: In this article, NiO nanoparticles were synthesized at different annealing temperatures via a thermal decomposition process and characterized using X-ray diffraction, scanning electron microscopy, and UV-vis spectroscopy.
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Fabrication, characterization and catalytic activity of α-MnO2 nanowires for dye degradation of reactive black 5
TL;DR: In this article, MnO2 nanowires (NWs) prepared by hydrothermal method are characterized using XRD and FT-IR, showing that the crystallite size, surface area of NWs increases, whereas dislocation density and band gap decreases with an increase in oxidizer molarity.
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Hydrothermally synthesized reduced graphene oxide and Sn doped manganese dioxide nanocomposites for supercapacitors and dopamine sensors
TL;DR: In this article, two important electrochemical applications of nanocomposites, viz, electrodes for supercapacitor and sensors for a biomolecule, dopamine are reported; the prepared nanowires have been characterized by XRD, which reveals smaller crystallite size of rGO-MnO 2 composites compared to pristine MnO 2 and the trend is supported by BET analysis.
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Hot corrosion behavior of plasma-sprayed NiCrAlY/TiO2 and NiCrAlY/Cr2O3/YSZ cermets coatings on alloy steel
TL;DR: In this article, the authors evaluate the hot corrosion resistance of plasma-sprayed 70% NiCrAlY+ 30% TiO2 and 70%NiCrAly+ 25% Cr2O3+5% YSZ coatings on MDN 420 alloy.
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Effect of current density on morphological, structural and optical properties of porous silicon
M. R. Ramesh,H.S. Nagaraja +1 more
TL;DR: The morphology of porous silicon (PS) layers produced by electrochemical etching of n-type (100) silicon (Si) at different low current densities was studied using SEM, image J analysis and WSxM software.