Transparent ceramics have various potential applications such as infrared (IR) windows/domes, lamp envelopes, opto-electric components/devices, composite armors, and screens for smartphones and they can be used as host materials for solid-state lasers. Transparent ceramics were initially developed to replace single crystals because of their simple processing route, variability in composition, high yield productivity, and shape control, among other factors. Optical transparency is one of the most important properties of transparent ceramics. In order to achieve transparency, ceramics must have highly symmetric crystal structures; therefore, the majority of the transparent ceramics have cubic structures, while tetragonal and hexagonal structures have also been reported in the open literature. Moreover, the optical transparency of ceramics is determined by their purity and density; the production of high-purity ceramics requires high-purity starting materials, and the production of high-density ceramics requires sophisticated sintering techniques and optimized sintering aids. Furthermore, specific mechanical properties are required for some applications, such as window materials and composite armor. This review aims to summarize recent progress in the fabrication and application of various transparent ceramics.

Materials development and potential applications of transparent ceramics: A review

The performance of ultrafast semiconductor disk lasers has rapidly advanced in recent decades. The strong interest from industry for inexpensive, compact, and reliable ultrafast laser sources in the picosecond and femtosecond domains has driven this technology toward commercial products. Frequency metrology and biomedical applications would benefit from sub-200-femtosecond pulse durations with peak powers in the kilowatt range. The aim of this review is to briefly describe the market potential and give an overview of the current status of mode-locked semiconductor disk lasers. Particular focus is placed on the ongoing efforts to achieve shorter pulses with higher peak powers. As small, ultrashort-pulse lasers with high peak powers, semiconductor thin-disk lasers hold promise for spectroscopy, metrology and imaging. Bauke Tilma and co-workers from ETH Zurich review recent progress in developing such lasers for these applications. They report how the latest designs of external-cavity disk lasers that are passively mode locked using a saturable absorber now offer repetition rates of up to 100 gigahertz, pulse durations of shorter than 200 femtoseconds and peak powers in the kilowatt range. The compact design, excellent noise performance and customizable emission wavelength of such sources make them highly attractive for a variety of applications. Future research into the materials providing the optical gain and saturable absorption in such lasers is likely to further improve their efficiency, reliability and thermal stability.

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Recent advances in ultrafast semiconductor disk lasers

Quantum information encoded in single trapped ions provides a promising avenue towards a scalable quantum computer. This contribution describes most of the necessary building blocks for such a device. Particular emphasis is given to the implementation of single-qubit and multi-qubit gate operations.

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Quantum computing with trapped ions

Vertical-external-cavity surface-emitting lasers (VECSELs) are the most versatile laser sources, combining unique features such as wide spectral coverage, ultrashort pulse operation, low noise properties, high output power, high brightness and compact form-factor. This paper reviews the recent technological developments of VECSELs in connection with the new milestones that continue to pave the way towards their use in numerous applications. Significant attention is devoted to the fabrication of VECSEL gain mirrors in challenging wavelength regions, especially at the yellow and red wavelengths. The reviewed fabrication approaches address wafer-bonded VECSEL structures as well as the use of hybrid mirror structures. Moreover, a comprehensive summary of VECSEL characterization methods is presented; the discussion covers different stages of VECSEL development and different operation regimes, pointing out specific characterization techniques for each of them. Finally, several emerging applications are discussed, with emphasis on the unique application objectives that VECSELs render possible, for example in atom and molecular physics, dermatology and spectroscopy.

https://iopscience.iop.org/article/10.1088/1361-6463/aa7bfd/pdf

Optically pumped VECSELs: review of technology and progress

We report a first dissipative dispersive-managed soliton fiber laser operating at 2 μm The cavity comprised of all-anomalous-dispersion fiber employs chirped fiber Bragg grating, which ensures net-normal cavity dispersion and semiconductor saturable absorber for mode-locking

Dissipative dispersion-managed soliton 2 μm thulium/holmium fiber laser

A high-efficiency optically pumped vertical-external-cavity surface-emitting laser emitting 20 W at a wavelength around 588 nm is demonstrated. The semiconductor gain chip emitted at a fundamental wavelength around 1170-1180 nm and the laser employed a V-shaped cavity. The yellow spectral range was achieved by intra-cavity frequency doubling using a LBO crystal. The laser could be tuned over a bandwidth of ~26 nm while exhibiting watt-level output powers. The maximum conversion efficiency from absorbed pump power to yellow output was 28% for continuous wave operation. The VECSEL’s output could be modulated to generate optical pulses with duration down to 570 ns by directly modulating the pump laser. The high-power pulse operation is a key feature for astrophysics and medical applications while at the same time enables higher slope efficiency than continuous wave operation owing to decreased heating.

High-efficiency 20 W yellow VECSEL

We report on a 2085 nm holmium-doped silica fiber laser passively mode-locked by semiconductor saturable absorber mirror and carbon nanotube absorber. The laser, pumped by a 1.16 μm semiconductor disk laser, produces 890 femtosecond pulses with the average power of 46 mW and the repetition rate of 15.7 MHz.

Femtosecond mode-locked holmium fiber laser pumped by semiconductor disk laser

A 1.6µm mode-locked Raman fiber laser pumped by a 1480nm semiconductor disk laser is demonstrated. Watt-level core pumping of the single-mode fiber Raman lasers with low-noise disk lasers together with semiconductor saturable absorber mirror mode locking represents a highly practical solution for short-pulse operation.

Raman fiber laser pumped by a semiconductor disk laser and mode locked by a semiconductor saturable absorber mirror.

The highest power result for an optically-pumped single-chip vertical external-cavity surface-emitting laser with emission near 1180 nm is reported. The gain mirror was grown by molecular beam epitaxy and incorporated a strain compensated GaInAs/GaAs/GaAsP active region. An intra-cavity diamond heat spreader was attached to the gain mirror for thermal management. In free-running operation, the laser emitted more than 20 W at a mount temperature of about 12 °C. The output spectrum was centred between 1165–1190 nm depending on the mount temperature and pump power. By using an intra-cavity birefringent filter, the full width at half-maximum linewidth could be narrowed to ≤1 nm and at the same time achieved approximately 14 W of output power near 1178 nm. Moreover, the lasing wavelength could be tuned over more than 40 nm.

1180 nm VECSEL with output power beyond 20 W

We report on the development of an optically-pumped vertical external-cavity surface-emitting laser emitting near 1120 nm using strain compensated quantum wells. The development is motivated by the need to achieve narrow linewidth emission at ~280 nm via fourth harmonic generation, which is required to cool Mg+ ions. The gain mirror had a top-emitting geometry, was grown by molecular beam epitaxy and comprised GaInAs/GaAs quantum wells strain compensated by GaAsP layers; the strain compensation was instrumental for achieving a dislocation free epitaxial structure without dark lines. We demonstrate VECSEL operation at a fundamental wavelength close to 1118 nm with a linewidth of less than 300 kHz. Using a lithium triborate crystal we achieved frequency doubling to ~559 nm with an output power of 1.1W.

M. Tavast

Papers

High-efficiency 20 W yellow VECSEL

Femtosecond mode-locked holmium fiber laser pumped by semiconductor disk laser

Raman fiber laser pumped by a semiconductor disk laser and mode locked by a semiconductor saturable absorber mirror.

1180 nm VECSEL with output power beyond 20 W

Narrow linewidth 1118/559 nm VECSEL based on strain compensated GaInAs/GaAs quantum-wells for laser cooling of Mg-ions