M
M. V. Svechnikov
Researcher at Russian Academy of Sciences
Publications - 37
Citations - 354
M. V. Svechnikov is an academic researcher from Russian Academy of Sciences. The author has contributed to research in topics: Reflection coefficient & Reflection (physics). The author has an hindex of 9, co-authored 35 publications receiving 224 citations.
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Journal ArticleDOI
High-reflection Mo/Be/Si multilayers for EUV lithography
Nikolai I. Chkhalo,Sergei A Gusev,A. N. Nechay,D. E. Pariev,Vladimir N. Polkovnikov,Nikolai N. Salashchenko,Franz Schäfers,M.G. Sertsu,Andrey Sokolov,M. V. Svechnikov,Dmitry A Tatarsky +10 more
TL;DR: Calculations show that by optimizing the thickness of the Be layer it should be possible to increase the reflection coefficient by another 0.5-1%.
Journal ArticleDOI
Current status and development prospects for multilayer X-ray optics at the Institute for Physics of Microstructures, Russian Academy of Sciences
A. D. Akhsakhalyan,E. B. Kluenkov,A. Ya. Lopatin,V. I. Luchin,A. N. Nechay,A. E. Pestov,Vladimir N. Polkovnikov,Vladimir N. Polkovnikov,N. N. Salashchenko,M. V. Svechnikov,M. N. Toropov,N. N. Tsybin,Nikolay I. Chkhalo,A. V. Shcherbakov +13 more
TL;DR: In this article, the main directions in multilayer X-ray optics developed at the Institute for the Physics of Microstructures, Russian Academy of Sciences, are presented and the aspects of the use thereof in science and technology are considered.
Journal ArticleDOI
Be/Al-based multilayer mirrors with improved reflection and spectral selectivity for solar astronomy above 17 nm wavelength
Nikolay I. Chkhalo,D. E. Pariev,Vladimir N. Polkovnikov,N. N. Salashchenko,R.A. Shaposhnikov,I. L. Stroulea,M. V. Svechnikov,Yu. A. Vainer,S. Yu. Zuev +8 more
TL;DR: In this article, it was shown that in the vicinity of 17nm wavelength, Be can be used as an optically contrasting material with Al in periodic multilayer mirrors, and the increase of the reflection coefficient was conditioned by smoothing the interfaces from root-mean-square value of 1.3 nm in pure Be/Al structures to 0.6 nm in Si-containing samples.
Journal ArticleDOI
Influence of barrier interlayers on the performance of Mo/Be multilayer mirrors for next-generation EUV lithography.
M. V. Svechnikov,Nikolay I. Chkhalo,S. A. Gusev,A. N. Nechay,D. E. Pariev,A. E. Pestov,Vladimir N. Polkovnikov,D. A. Tatarskiy,N. N. Salashchenko,Franz Schäfers,M.G. Sertsu,Andrey Sokolov,Yu. A. Vainer,M. V. Zorina +13 more
TL;DR: A comparative study was carried out of the structure and reflection performance of four types of multilayer mirror for extreme ultraviolet lithography at 11.2 nm, demonstrating that Mo/Be mirrors show maximum reflectance at normal incidence, while maximum structural perfection is shown by Mo/ be/Si mirrors.