Recent advancements in optical biosensors for cancer detection.

Recent advancements in optical biosensors for cancer detection

A new design of silicon photonics ring resonator based biosensor for the detection of the diseased cell is proposed. The proposed label-free and high-Q ring resonator has the potential to exhibit high sensitivity and selectivity for detecting different cancer cells, such as leukemia, cervical cancer, and breast cancer. The parameters of the ring resonator are optimized to make the biosensor suitable for detecting cancer cells in the pinch of blood with the sensitivity of more than 200 nanometers per Refractive Index Unit (nm/RIU) and quality factor of 1200. Through the finite difference time domain (FDTD) method, it is observed that the resonant wavelength of a ring resonator can be increased by escalating the refractive index of the modal present on the surface of the ring resonator. The simulation and analysis demonstrate that the outline sensitivity and quality factor of the proposed biosensing platform are acceptable for the cancer cell level detection in the blood sample present on the surface of the resonator. The proposed design also shows sufficiently separated resonant peaks for different cancer cells that open the possibility of highly selective label-free cancer cell detection.

High-Quality Optical Ring Resonator-Based Biosensor for Cancer Detection

Colon Cancer is the fourth most common form of cancer and the second-leading cause of cancer related deaths in the United States. A large part of the reason the number of fatalities is so high is late detection as when detected in the early stages of development 9 out of 10 cases of colon cancer are non-fatal 5 years after detection. Currently the main method of colon cancer detection are colonoscopies which are highly invasive and time intensive procedures. In this work we propose a new diagnostic technique for colon cancer using an InSb based device that works by a change in the spectral response of the metamaterial when exposed to electromagnetic waves in the terahertz regime and combined with cancerous colon tissue as compared to the response when combined with healthy colon tissue. We attribute this change in spectral response is due to the differing optical properties of the healthy and cancerous colon tissue as well as the creation of surface plasmon polaritons within our device.

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Colon Cancer Detection by Designing and Analytical Evaluation of a Water-Based THz Metamaterial Perfect Absorber

The capability of multiple valued logic (MVL) circuits to achieve higher storage density when compared to that of existing binary circuits is highly impressive. Recently, MVL circuits have attracted significant attention for the design of digital systems. Carbon nanotube field effect transistors (CNTFETs) have shown great promise for design of MVL based circuits, due to the fact that the scalable threshold voltage of CNTFETs can be utilized easily for the multiple voltage designs. In addition, resistive random access memory (RRAM) is also a feasible option for the design of MVL circuits, owing to its multilevel cell capability that enables the storage of multiple resistance states within a single cell. In this manuscript, a design approach for ternary combinational logic circuits while using CNTFETs and RRAM is presented. The designs of ternary half adder, ternary half subtractor, ternary full adder, and ternary full subtractor are evaluated while using Synopsis HSPICE simulation software with standard 32 nm CNTFET technology under different operating conditions, including different supply voltages, output load variation, and different operating temperatures. Finally, the proposed designs are compared with the state-of-the-art ternary designs. Based on the obtained simulation results, the proposed designs show a significant reduction in the transistor count, decreased cell area, and lower power consumption. In addition, due to the participation of RRAM, the proposed designs have advantages in terms of non-volatility.

https://www.mdpi.com/2079-9292/10/1/79/pdf

Carbon nanotube field effect transistor (Cntfet) and resistive random access memory (rram) based ternary combinational logic circuits

In this paper, the performances of 6T SRAM designs implemented by different FinFET devices are compared for different pull-up, pull down and pass gate transistor (PU:PD:PG) ratios to identify the best FinFET device for high speed and low power SRAM applications. Underlapped FinFETs (UF) and Design/Technology Co-Optimized FinFETs (DTCO_F) are used for the design and analysis. It is observed that with the PU:PD:PG ratios of 1:1:1 and 1:5:2 for the UF-SRAMs the read energy has degraded by 3.31% and 48.72% compared to the DTCO_F-SRAMs, respectively. However, the read energy with 2:5:2 ratio has improved by 32.71% in the UF-SRAM compared to the DTCO_F-SRAMs. The write energy with 1:1:1 configuration has improved by 642.27% in the UF-SRAM compared to the DTCO_F-SRAM. On the other hand, the write energy with 1:5:2 and 2:5:2 configurations has degraded by 86.26% and 96% in the UF-SRAMs compared to the DTCO_FSRAMs. The stability and reliability of different SRAMs are also evaluated for 500mV supply.

Performance Stability Analysis of SRAM Cells Based on Different FinFET Devices in 7nm Technology

FinFET based SRAMs in Sub-10nm domain

The static random access memory (SRAM) has a significant impact on the overall power consumption and energy efficiency of any micro and nanoelectronics application or system. SRAM consumes a considerable amount of power in the idle state. As a consequence, the leakage power is one of the most critical metrics in SRAM designs. This brief evaluates the standby leakage power in the tunnel FET (TFET)-based 6T SRAM cell for different pull-up, pull-down, and pass-gate transistors ratios (PU: PD: PG) and compared to 10-nm FinFET-based 6T SRAM designs. It is observed that the 10-nm TFET-based SRAMs have 60.7, 65.22, and 59.7 times less standby leakage power compared to the 10-nm FinFET-based SRAMs when the PU: PD: PG ratios are 1:1:1, 1:5:2, and 2:5:2, respectively. This brief also presents an analysis of the stability and reliability of TFET-based 6T SRAM circuit with a reduced supply voltage of 500 mV. The static noise margin, which is a critical measure of SRAM stability and reliability, is determined for hold, read and write operations of the 6T TFET SRAM cell. The robustness of the optimized TFET-based 6T SRAM circuit is also evaluated at different supply voltages. Simulations were done in HSPICE and cadence tools.

Reliability and Energy Efficiency of the Tunneling Transistor-Based 6T SRAM Cell in Sub-10 nm Domain

The Static Random Access Memory (SRAM) has huge impact on the overall power consumption of any digital design. SRAM consumes a significant amount of power in the idle state. Therefore, the leakage power is one of the most critical metrics in SRAM designs. This paper evaluates the standby leakage power of GNRFET based 6T SRAM bitcell and compared to 10nm FinFET based 6T SRAM bitcell. It is observed that the 10nm GNRFET based SRAMs have 16.43 times less standby leakage power compared to the 10nm FinFET based SRAMs. The paper also presents an analysis of the stability and reliability of GNRFET based 6T SRAM circuit with a reduced supply voltage of 500mV. The static noise margin (SNM), which is a critical measure of SRAM stability and reliability, is determined for hold, read and write operations of the 6T GNRFET SRAM cell. Simulations were performed in HSPICE and Cadence tools.

Mahmood Uddin Mohammed

Papers

High-Quality Optical Ring Resonator-Based Biosensor for Cancer Detection

Performance Stability Analysis of SRAM Cells Based on Different FinFET Devices in 7nm Technology

FinFET based SRAMs in Sub-10nm domain

Reliability and Energy Efficiency of the Tunneling Transistor-Based 6T SRAM Cell in Sub-10 nm Domain

A Low Leakage SRAM Bitcell Design Based on MOS-Type Graphene Nano-Ribbon FET