An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Disclosed is a display device including a transistor showing extremely low off current. In order to reduce the off current, a semiconductor material whose band gap is greater than that of a silicon semiconductor is used for forming a transistor, and the concentration of an impurity which serves as a carrier donor of the semiconductor material is reduced. Specifically, an oxide semiconductor whose band gap is greater than or equal to 2 eV, preferably greater than or equal to 2.5 eV, more preferably greater than or equal to 3 eV is used for a semiconductor layer of a transistor, and the concentration of an impurity which serves as a carrier donor included is reduced. Consequently, the off current of the transistor per micrometer in channel width can be reduced to lower than 10 zA/μm at room temperature and lower than 100 zA/μm at 85° C.

Display device and manufacturing method thereof

An object is to provide a method for manufacturing a semiconductor device, in which the number of photolithography steps can be reduced, the manufacturing process can be simplified, and manufacturing can be performed with high yield at low cost A method for manufacturing a semiconductor device includes the following steps: forming a semiconductor film; irradiating a laser beam by passing the laser beam through a photomask including a shield for shielding the laser beam; subliming a region which has been irradiated with the laser beam through a region in which the shield is not formed in the photomask in the semiconductor film; forming an island-shaped semiconductor film in such a way that a region which is not irradiated with the laser beam is not sublimed because it is a region in which the shield is formed in the photomask; forming a first electrode which is one of a source electrode and a drain electrode and a second electrode which is the other one of the source electrode and the drain electrode; forming a gate insulating film; and forming a gate electrode over the gate insulating film

Method for Manufacturing Semiconductor Device

A light-absorbing layer is selectively formed over an insulating surface, an insulating layer is formed over the insulating surface and the light-absorbing layer, the insulating surface, the light-absorbing layer, and the insulating layer are irradiated with laser light to selectively remove only the insulating layer above the light-absorbing layer in an irradiated region of the insulating layer so that an opening reaching the light-absorbing layer is formed in the insulating layer, and a conductive film is formed in the opening so as to be in contact with the light-absorbing layer. By forming the conductive film in the opening so as to be in contact with the exposed light-absorbing layer, the conductive film can be electrically connected to the light-absorbing layer with the insulating layer interposed therebetween.

Method for manufacturing display device

An object is to improve reliability of a light-emitting device. A light-emitting device has a driver circuit portion including a transistor for a driver circuit and a pixel portion including a transistor for a pixel over one substrate. The transistor for the driver circuit and the transistor for the pixel are inverted staggered transistors each including an oxide semiconductor layer in contact with part of an oxide insulating layer. In the pixel portion, a color filter layer and a light-emitting element are provided over the oxide insulating layer. In the transistor for the driver circuit, a conductive layer overlapping with a gate electrode layer and the oxide semiconductor layer is provided over the oxide insulating layer. The gate electrode layer, a source electrode layer, and a drain electrode layer are formed using metal conductive films.

Light emitting device and method for manufacturing the same

A transparent electrically conductive oxide film is composed of a compound oxide containing indium oxide, tin oxide, and zinc oxide and includes a connecting section, in which the tin content is higher than the zinc content at least in connecting section, and at least the connection section has crystallinity Alternatively, in the transparent electrically conductive oxide film, the atomic percentage of zinc to the total of zinc, indium, and tin is in the range of about 1 at % through about 9 at %, the atomic ratio of tin to zinc is about 1 or more, the atomic percentage of tin to the total of zinc, indium, and tin is about 20 at % or less, and at least a portion thereof has crystallinity An electronic apparatus provided with such a transparent electrically conductive oxide film as at least a portion of the electric circuit thereof, a target for forming a transparent electrically conductive oxide film, and a method for fabricating a substrate provided with a transparent electrically conductive oxide film are also disclosed

Transparent electrically conductive oxide film for an electronic apparatus and related method

The invention provides a gate electrode (40) (wiring) characterized by comprising titanium or titanium oxide film (40b) that surrounds a copper layer (40a); a thin-film transistor substrate (31) characterized by comprising the gate electrode (40) (wiring); and a liquid crystal display device characterized in that liquid crystal is interposed between a pair of substrates opposed to each other, one of the substrates being the thin-film transistor substrate (31).

Wiring, thin-film transistor substrate with the wiring, method of manufacture thereof, and liquid crystal display device

A gate electrode (wiring) (40) having a Cu layer (40 a) surrounded by a coating film (40 b) made of titanium or titanium oxide; a TFT substrate (31) comprising the gate electrode (wiring) (40) and a LCD comprising a pair of opposing substrates and a liquid crystal disposed between the opposing substrates, wherein one of the pair of opposing substrates is a TFT substrate (31), are disclosed.

Wiring, TFT substrate using the same and LCD

PROBLEM TO BE SOLVED: To provide an oxide transparent conductive film capable of being finely etched in weak acid, having low connection resistance, superior in light transmittance, having low resistance in connecting TCP and free from fluctuation of resistance over aging, a target for manufacturing the same, and a method of manufacturing a substrate having the oxide transparent conductive film. SOLUTION: This oxide transparent conductive film 6 is composed of a composite oxide containing indium oxide, tin oxide and zinc oxide, and has at least a connecting part 6a with another conductor, and a content of tin is more than that of zinc in the connecting part, and the connecting part has crystallinity. This target is composed of the composite oxide. Further, this method of manufacturing a substrate comprises forming a film of the composite oxide, and etching, patterning and afterwards heat-treating the same to obtain a substrate 2 having the oxide transparent conductive film 6 of low connecting resistance.

Oxide transparent conductive film, target for forming the same, method of manufacturing substrate having oxide transparent conductive film, electronic equipment and liquid crystal display unit

A gate electrode (wiring) ( 40 ) having a Cu layer ( 40 a ) surrounded by a coating film ( 40 b ) made of titanium or titanium oxide; a TFT substrate ( 31 ) comprising the gate electrode (wiring) ( 40 ) and a LCD comprising a pair of opposing substrates and a liquid crystal disposed between the opposing substrates, wherein one of the pair of opposing substrates is a TFT substrate ( 31 ), are disclosed.

Makoto Sasaki

Papers

Transparent electrically conductive oxide film for an electronic apparatus and related method

Wiring, thin-film transistor substrate with the wiring, method of manufacture thereof, and liquid crystal display device

Wiring, TFT substrate using the same and LCD

Oxide transparent conductive film, target for forming the same, method of manufacturing substrate having oxide transparent conductive film, electronic equipment and liquid crystal display unit

Wiring, TFT substrate using the same, manufacturing method of TFT substrate, and LCD.