This expanded and thoroughly revised edition of Thomas H. Lee's acclaimed guide to the design of gigahertz RF integrated circuits features a completely new chapter on the principles of wireless systems. The chapters on low-noise amplifiers, oscillators and phase noise have been significantly expanded as well. The chapter on architectures now contains several examples of complete chip designs that bring together all the various theoretical and practical elements involved in producing a prototype chip. First Edition Hb (1998): 0-521-63061-4 First Edition Pb (1998); 0-521-63922-0

The Design of CMOS Radio-Frequency Integrated Circuits: RF CIRCUITS THROUGH THE AGES

The present invention relates to an integrated circuit package comprising at least one substrate, each substrate including at least one layer, at least one semiconductor die, at least one terminal, and an antenna located in the integrated circuit package, but not on said at least one semiconductor die. The conducting pattern comprises a curve having at least five sections or segments, at least three of the sections or segments being shorter than one-tenth of the longest free-space operating wavelength of the antenna, each of the five sections or segments forming a pair of angles with each adjacent segment or section, wherein the smaller angle of each of the four pairs of angles between sections or segments is less than 180° (i.e., no pair of sections or segments define a longer straight segment), wherein at least two of the angles are less than 115°, wherein at least two of the angles are not equal, and wherein the curve fits inside a rectangular area the longest edge of which is shorter than one-fifth of the longest free-space operating wavelength of the antenna.

Integrated circuit package including miniature antenna

Systems and methods for continuous measurement of an analyte in a host are provided. The system generally includes a continuous analyte sensor configured to continuously measure a concentration of analyte in a host and a sensor electronics module physically connected to the continuous analyte sensor during sensor use, wherein the sensor electronics module is further configured to directly wirelessly communicate displayable sensor information to a plurality of different types of display devices.

Systems and methods for blood glucose monitoring and alert delivery

This paper presents the characteristics of a miniaturized microstrip filter, which has two separate coupling paths: electric coupling path and magnetic coupling path between two resonators. Either magnetic coupling or electric coupling in two paths can be dominant in the total coupling coefficient of the inter-stage resonators with the similar configuration, but different positions of transmission zero points (ZPs). Based on the proposed filter topology, second- and fourth-order filters have been designed and fabricated for the first time. Advantages of using this type of filter are not only its low insertion loss and much more compact size, but also its controllable transmission ZPs.

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A compact size coupling controllable filter with separate electric and magnetic coupling paths

The present invention is directed to perform fine low-voltage control without largely increasing the circuit layout area in a low-power consumption structure. In the case of shifting a region to a low-speed mode, a system controller outputs a request signal and an enable signal to a power switch controller and a low-power drive circuit, respectively, to turn off a power switch and to perform a control so that the voltage level of a virtual reference potential becomes about 0.2 V to about 0.3V. The region operates on voltages between a power supply voltage and a virtual reference potential, so that it is controlled in the low-speed mode.

Semiconductor Integrated Circuit Device

Based on the understanding of flicker noise generation in "silicon metal-oxide semiconductor field-effect transistors" (MOSFETs), a novel method for improving the phase noise performance of a CMOS LC oscillator is presented. Zhou et al. and Hoogee have suggested that the 1/f noise can be reduced through a switched gate, and the flicker noise generated is inversely proportional to the gate switching frequency. The novel tail transistor topology is compared to the two popular tail transistor topologies, namely, the fixed biasing tail transistor and without tail transistor. Through this technique, a figure of merit of 193 dB is achieved using a fully integrated CMOS oscillator with a tank quality factor of about 9.

/pdf/rf-cmos-low-phase-noise-lc-oscillator-through-memory-22ydixkr4g.pdf

RF CMOS low-phase-noise LC oscillator through memory reduction tail transistor

The design of a high-speed wide-band high resolution programmable frequency divider is investigated. A new reloadable D flip-flop for the high speed programmable frequency divider is proposed. It is optimized in terms of propagation delay and power consumption as compared with the existing designs. Measurement results show that an all-stage programmable counter implemented with this D flip-flop using the Chartered 0.18 /spl mu/m CMOS process is capable of operating up to 1.8 GHz for a 1.8 V supply voltage and a 5.8-mW power consumption. By using this counter, an ultra-wide range high resolution frequency divider is achieved with low power consumption for 5-6-GHz wireless LAN applications.

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Design of a low power wide-band high resolution programmable frequency divider

A new MOS varactor device is described. A bottom electrode comprises a plurality of diffusion junctions in a semiconductor substrate. The semiconductor substrate may be n-type or p-type. The diffusion junctions are arranged in a two-dimensional array. The diffusion junction may be either n-type or p-type. The diffusion junctions may be contained in a p-well or an n-well. A dielectric layer overlies the semiconductor substrate. A top electrode overlies the dielectric layer. The top electrode comprises a single polygon containing a two-dimensional array of openings therein that exposes the diffusion junctions. The top electrode preferably comprises polysilicon. An interlevel dielectric layer overlies the top electrode and the diffusion junction. The interlevel dielectric layer has a two-dimensional array of contact openings that expose the underlying diffusion junctions. A patterned metal layer overlies the interlevel dielectric layer and contacts the diffusion junctions through the contact openings.

High performance integrated varactor on silicon

A wideband voltage-controlled oscillator (VCO) with a frequency range from 830 MHz to 2.4 GHz is presented. The VCO has two control inputs, one for continuous control of the output frequency and one for band switching, and two quadrature outputs. Based on a 0.25 /spl mu/m CMOS process, this VCO is simulated for the supply voltage of 2 V. A wide tuning range of 98% is obtained in two independent bands. The harmonic distortions are kept low enough within the entire frequency range. The phase noise is -105 dBc/Hz at 400 kHz offset for the oscillation frequency of 830 MHz, and -89 dBc/Hz at 400 kHz offset for the oscillation frequency of 2.42 GHz. The VCO has a gain of 745.6 MHz/V for its first band and 1.22 GHz/V for its second band. Accurate quadrature outputs are maintained throughout the entire frequency range, as needed in all modern transceiver architectures. Its 2nd harmonic is also reduced by a compensation circuit to less than -33 dB in the worst case at the frequency of 2.42 GHz

New wideband/dualband CMOS LC voltage-controlled oscillator

An accurate and simple parameter extraction technique for deep submicron MOSFETs using a conventional MOSFET model with three terminal resistances for the gate, source and drain, as well as a simple substrate coupling network and a non-reciprocal capacitor is proposed. This extraction technique utilises both Z and Y parameter analysis on the proposed small-signal equivalent circuit. RF simulation is carried out using the BSIM4 DC core model with the extracted extrinsic components. Analytical equations are derived for all the RF parameters and a linear regression technique is used to extract the parameters. Transcapacitance is utilised in the model to ensure charge conservation and good fitting of the Y21 and Y12 parameters. The extracted and optimised RF parameter values are in close agreement, which implies that little or no optimisation is required using this technique. Hence, this extraction methodology can be implemented easily for RF MOSFET modelling. Excellent agreement has been obtained between the simulated and measured results up to 20 GHz.

Manh-Anh Do

Papers

RF CMOS low-phase-noise LC oscillator through memory reduction tail transistor

Design of a low power wide-band high resolution programmable frequency divider

High performance integrated varactor on silicon

New wideband/dualband CMOS LC voltage-controlled oscillator

Simple and accurate extraction methodology for RF MOSFET valid up to 20 GHz