Spin electronics is a rapidly expanding field stimulated by a strong synergy between breakthrough basic research discoveries and industrial applications in the fields of magnetic recording, magnetic field sensors, nonvolatile memories [magnetic random access memories (MRAM) and especially spin-transfer-torque MRAM (STT-MRAM)]. In addition to the discovery of several physical phenomena (giant magnetoresistance, tunnel magnetoresistance, spin-transfer torque, spin-orbit torque, spin Hall effect, spin Seebeck effect, etc.), outstanding progress has been made on the growth and nanopatterning of magnetic multilayered films and nanostructures in which these phenomena are observed. Magnetic anisotropy is usually observed in materials that have large spin-orbit interactions. However, in 2002 perpendicular magnetic anisotropy (PMA) was discovered to exist at magnetic
metal/oxide interfaces [for instance Co(Fe)/alumina]. Surprisingly, this PMA is observed in systems where spin-orbit interactions are quite weak, but its amplitude is remarkably large—comparable to that measured at Co/Pt interfaces, a reference for large interfacial anisotropy (anisotropy ∼1.4 erg/cm2 = 1.4 mJ/m2). Actually, this PMA was found to be very common at magnetic metal/oxide interfaces since it has been observed with a large variety of amorphous or crystalline oxides, including AlOx, MgO, TaOx, HfOx, etc. This PMA is thought to be the result of electronic hybridization between the oxygen and the magnetic transition metal orbit across the interface, a hypothesis supported by ab initio calculations. Interest in this phenomenon was sparked in 2010 when it was demonstrated that the PMA at magnetic transition metal/oxide interfaces could be used to build out-of-plane magnetized magnetic tunnel junctions for STT-MRAM cells. In these systems, the PMA at the CoFeB/MgO interface can be used to simultaneously obtain good memory retention, thanks to the large PMA amplitude, and a low write current, thanks to a relatively weak Gilbert damping. These two requirements for memories tend to be difficult to reconcile since they rely on the same spin-orbit coupling. PMA-based approaches have now become ubiquitous in the designs for perpendicular STT-MRAM, and major microelectronics companies are actively working on their development with the first goal of addressing embedded FLASH and static random access memory-type of applications. Scalability of STT-MRAM devices based on this interfacial PMA is expected to soon exceed the 20-nm nodes. Several very active new fields of research also rely on interfacial PMA at magnetic metal/oxide interfaces, including spin-orbit torques associated with Rashba or spin Hall effects, record high speed domain wall propagation in buffer/magnetic metal/oxide-based magnetic wires, and voltage-based control of anisotropy. This review deals with PMA at magnetic metal/oxide interfaces from its discovery, by examining the diversity of systems in which it has been observed and the physicochemical methods through which the key roles played by the electronic hybridization at the metal/oxide interface were elucidated. The physical origins of the phenomenon are also covered and how these are supported by ab initio calculations is dealt with. Finally, some examples of applications of this interfacial PMA in STT-MRAM are listed along with the various emerging research topics taking advantage of this PMA.

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Perpendicular magnetic anisotropy at transition metal/oxide interfaces and applications

Recent Developments in Perpendicular Magnetic Anisotropy Thin Films for Data Storage Applications

Spin-orbit torques are studied in Ta/TbFeCo/MgO patterned structures, where the ferrimagnetic material TbFeCo provides a strong bulk perpendicular magnetic anisotropy (bulk-PMA) independent of the interfaces. The current-induced magnetization switching in TbFeCo is investigated in the presence of a perpendicular, longitudinal, or transverse field. An unexpected partial-switching phenomenon is observed in the presence of a transverse field unique to our bulk-PMA material. It is found that the anti-damping torque related with spin Hall effect is very strong, and a spin Hall angle is determined to be 0.12. The field-like torque related with Rashba effect is unobservable, suggesting that the interface play a significant role in Rashba-like torque.

Spin Hall switching of the magnetization in Ta/TbFeCo structures with bulk perpendicular anisotropy

We report on the thermal conductivity of atomic layer deposition-grown amorphous alumina thin films as a function of atomic density. Using time domain thermoreflectance, we measure the thermal conductivity of the thin alumina films at room temperature. The thermal conductivities vary ∼35% for a nearly 15% change in atomic density and are substrate independent. No density dependence of the longitudinal sound speeds is observed with picosecond acoustics. The density dependence of the thermal conductivity agrees well with a minimum limit to thermal conductivity model that is modified with a differential effective-medium approximation.

https://patrickehopkins.files.wordpress.com/2011/02/gorham2014aa.pdf

Density dependence of the room temperature thermal conductivity of atomic layer deposition-grown amorphous alumina (Al2O3)

Simultaneous detection of terahertz (THz) emission and transient magneto-optical response is employed to study ultrafast laser-induced magnetization dynamics in three different types of amorphous metallic alloys: Co, GdFeCo, and NdFeCo. A satisfactory agreement between the dynamics revealed with the help of these two techniques is obtained for Co and GdFeCo. For NdFeCo the THz emission indicates faster dynamics than the magneto-optical response. This observation indicates that in addition to spin dynamics of Fe, ultrafast laser excitation of NdFeCo triggers faster magnetization dynamics of Nd originating from its orbital momentum.

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Simultaneous measurements of terahertz emission and magneto-optical Kerr effect for resolving ultrafast laser-induced demagnetization dynamics

We report the compositional and temperature dependence of magnetic compensation in amorphous GdFeCo films. Magnetic compensation is attributed to the competition between antiferromagnetic coupling of rare-earth with transition-metal (TM) ions and ferromagnetic interaction between the TM ions. The low-Gd region from 20 to 34 at. % was found to exhibit compensation phenomena characterized by a low saturation magnetization and perpendicular magnetic anisotropy (PMA) near the compensation temperature. Compensation temperature was not observed in previously unreported high-Gd region from 52 to 59 at. %, in qualitative agreement with results from recent model calculations. However, low magnetization was achieved at room temperature, accompanied by a large PMA with coercivity reaching ~6.6 kOe. The observed perpendicular magnetic anisotropy of amorphous GdFeCo films probably has a structural origin consistent with certain aspects of the atomic-scale anisotropy. Our findings have broadened the composition range of transition metal-rare earth alloys for designing PMA films, making it attractive for tunable magnetic anisotropy in nanoscale devices.

Amorphous GdFeCo Films Exhibiting Large and Tunable Perpendicular Magnetic Anisotropy

We report a strong size dependence of coercivity in amorphous ferrimagnetic TbFeCo films. The as-deposited film exhibited a low saturation magnetization (Ms=100 emu/cc) and a high perpendicular anisotropy (Ku=10^6 erg/cc). Hall-bar devices were fabricated for characterizing the magneto-transport behaviors. A significant increase in coercivity (up to 300 %) was observed at room temperature as the width of Hall bar was reduced. The large coercivity enhancement was attributed to the relaxation of film stress. The effect of strain and dimensionality on the coercivity in TbFeCo makes it attractive for tunable coercivity and the magnetization reversal in future nanoscale devices.

Strain-induced enhancement of coercivity in amorphous TbFeCo films

We report a strong size dependence of coercivity in amorphous ferrimagnetic TbFeCo films. The as-deposited film exhibited a low saturation magnetization (MS ∼ 100 emu/cc) and a high perpendicular anisotropy (KU ∼ 106 erg/cc). Hall-bar devices were fabricated for characterizing the magneto-transport behaviors. A significant increase in coercivity (up to ∼300%) was observed at room temperature as the width of Hall bar was reduced. The large coercivity enhancement was attributed to the relaxation of film stress. The effect of strain and dimensionality on the coercivity in TbFeCo makes it attractive for tunable coercivity and the magnetization reversal in future nanoscale devices.

We experimentally investigate the electron and phonon contributions to the thermal conductivity of amorphous GdFeCo and TbFeCo thin films. These amorphous rare-earth transition-metal (RE-TM) alloys exhibit thermal conductivities that increase nearly linearly with temperature from 90 to 375 K. Electrical resistivity measurements show that this trend is due to an increase in the electron thermal conductivity over this temperature range and a relatively constant phonon contribution to thermal conductivity. We find that at low temperatures (∼90 K), the phonon systems in these amorphous RE-TM alloys contribute ∼70% to thermal conduction with a decreasing contribution as temperature is increased.

Contributions of electron and phonon transport to the thermal conductivity of GdFeCo and TbFeCo amorphous rare-earth transition-metal alloys

Epitaxial growth of Co20Fe50Ge30 films on single crystal MgO (001) substrate is reported. Structure characterization revealed (001)-oriented B2 order of Co20Fe50Ge30, well lattice matched with the MgO barrier. Perpendicular magnetic anisotropy was achieved in the MgO/Co20Fe50Ge30/MgO structure with an optimized magnetic anisotropy energy density of 2 × 106 erg/cm3. The magnetic anisotropy is found to depend strongly on the thickness of the MgO and Co20Fe50Ge30 layers, indicating that the perpendicular magnetic anisotropy of Co20Fe50Ge30 is contributed by the interfacial anisotropy between Co20Fe50Ge30 and MgO. With reported low damping constant, Co20Fe50Ge30 films are promising spintronic materials for achieving low switching current.

Manli Ding

Papers

Amorphous GdFeCo Films Exhibiting Large and Tunable Perpendicular Magnetic Anisotropy

Strain-induced enhancement of coercivity in amorphous TbFeCo films

Strain-induced enhancement of coercivity in amorphous TbFeCo films

Contributions of electron and phonon transport to the thermal conductivity of GdFeCo and TbFeCo amorphous rare-earth transition-metal alloys

Perpendicular magnetization of Co20Fe50Ge30 films induced by MgO interface