scispace - formally typeset
Search or ask a question

Showing papers by "Marc Kastner published in 1982"


Journal ArticleDOI
TL;DR: In this paper, a simple model explains how multiple trapping (MT) in a continuous distribution of localized states gives rise to dispersion, which is then used to show what can be learned about the material from a complete study of its dispersive transport when MT is known to be the origin of the dispersion.
Abstract: Amorphous semiconductors and insulators display the phenomenon of dispersive transport: the average mobility of the carriers decreases with time after pulsed excitation. A simple model explains how multiple trapping (MT) in a continuous distribution of localized states gives rise to dispersion. This model is then used to show what can be learned about the material from a complete study of its dispersive transport when MT is known to be the origin of the dispersion. Transient photo-induced optical absorption (PA) provides a direct test of the presence of the MT mechanism. Transient photocurrent (PC) then provides the spectrum of the localized states when examined in the time regime before recombination begins. Using this density of states, many of the parameters that characterize transport and recombination, both monomolecular (MR) and bimolecular (BR), can be determined. The assumption that thermal excitation from localized states to higher-energy transport states limits both thermalization and r...

180 citations


Journal ArticleDOI
TL;DR: In this article, the relationship between steady-state photoconductivity and the transient phenomena is explored, and it is predicted that, in the approach to steady state, the current rises as tα for the same amount of time as is required to reach steady state when the light is turned on.

40 citations


Journal ArticleDOI
TL;DR: In this paper, transient photocurrent measurements on a-As2Se3 doped with Cl, Br, I, Ge, In, Tl, Na, K, Ag and Cu are reported as well as those on GeSeTe.
Abstract: Transient photocurrent measurements on a-As2Se3 doped with Cl, Br, I, Ge, In, Tl, Na, K, Ag and Cu are reported as well as those on GeSeTe. For most samples which show no deviations from the power-law decay (t −1 + α) of the average carrier mobility, the change in mobility can be entirely accounted for by a variation of α.

15 citations