Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges

Wide-band-gap oxides such as SrTiO3 are shown to be critical tests of theories of Schottky barrier heights based on metal-induced gap states and charge neutrality levels. This theory is reviewed and used to calculate the Schottky barrier heights and band offsets for many important high dielectric constant oxides on Pt and Si. Good agreement with experiment is found for barrier heights. The band offsets for electrons on Si are found to be small for many key oxides such as SrTiO3 and Ta2O5 which limit their utility as gate oxides in future silicon field effect transistors. The calculations are extended to screen other proposed oxides such as BaZrO3. ZrO2, HfO2, La2O3, Y2O3, HfSiO4, and ZrSiO4. Predictions are also given for barrier heights of the ferroelectric oxides Pb1−xZrxTiO3 and SrBi2Ta2O9 which are used in nonvolatile memories.

Band offsets of wide-band-gap oxides and implications for future electronic devices

Ferroelectric, dielectric and piezoelectric properties of ferroelectric thin films and ceramics are reviewed with the aim of providing an insight into different processes which may affect the behaviour of ferroelectric devices, such as ferroelectric memories and micro-electro-mechanical systems. Taking into consideration recent advances in this field, topics such as polarization switching, polarization fatigue, effects of defects, depletion layers, and depolarization fields on hysteresis loop behaviour, and contributions of domain-wall displacement to dielectric and piezoelectric properties are discussed. An introduction into dielectric, pyroelectric, piezoelectric and elastic properties of ferroelectric materials, symmetry considerations, coupling of electro-mechanical and thermal properties, and definitions of relevant ferroelectric phenomena are provided.

https://iopscience.iop.org/article/10.1088/0034-4885/61/9/002/pdf

Ferroelectric, dielectric and piezoelectric properties of ferroelectric thin films and ceramics

A wireless power system includes a power source, power receiver, and components thereof. The system can also include a parasitic antenna that can improve the coupling to the power source in various modes. The antenna can have both a variable capacitor and a variable inductor, and both of those can be changed in order to change characteristics of the matching.

Packaging and details of a wireless power device

▪ Abstract This paper reviews the literature on size effects in ferroelectric materials, with an emphasis on thin film perovskite ferroelectrics. The roles of boundary conditions, defect chemistry, electrode interfaces, surface layers, and microstructure in controlling the measured properties of ferroelectric films, as well as the observed deviation from bulk properties are discussed. Examples of the manifestation of size effects in terms of the low and high field dielectric properties, the piezoelectric effect, and the leakage behavior of films are given.

The Properties of Ferroelectric Films at Small Dimensions

The influence of the electrodes on the dielectric behavior and especially on the leakage behavior of SrTiO3 thin films was investigated by impedance analysis. Based on measurements on thin films with different electrode materials the work function of these materials was found to determine the leakage currents. The main conduction mechanism is thermionic emission of electrons from the cathode into the SrTiO3 thin film. The current–voltage characteristics are influenced by the Schottky effect.

Electrode influence on the charge transport through SrTiO3 thin films

Advanced dielectrics: Bulk ceramics and thin films

The mechanism of the dc electrical conduction and breakdown of perovskite-type titanates was investigated by impedance analysis. Based on an acceptor doped SrTiO3 model material, samples of different microstructures-ceramics, single crystals, and thin films-were employed. This approach allows us to distinguish conduction contributions of the bulk lattice, grain boundaries, and electrode interfaces. Based on defect chemistry studies, a predominant ionic contribution due to mobile oxygen vacancies and an additional p-type conduction were revealed for the bulk. At interfaces, space charge depletion layers of 100-500 nm width are formed in which the local conductivity is reduced by approx. four orders of magnitude compared to the bulk. Thin films show a similar depression of the conductivity. The combination of these facts may be indicative for considering thin films as distributed Schottky barriers. The field enhancement of the conductivity of thin films and of the interface depletion layers is compared and ...

Theory of conduction and breakdown in perovskite thin films

The invention describes a filter arrangement as well as an electronic component, each with a bulk acoustic wave resonator unit which is present on a carrier substrate ( 1 ) A reflection element ( 2 ) is provided between the carrier substrate ( 1 ) and the bulk acoustic wave resonator unit for the purpose of acoustic insulation of the generated oscillations This reflection element ( 2 ) may consist either of several layers of alternately high and low impedance or, if the acoustically reflecting substance has a sufficiently low impedance, of a single layer In addition, a mobile telephone device, a transmitter, a receiver, and a wireless data transmission system as well as a method of manufacturing an electronic component are described

Bulk acoustic wave filter

The invention describes a tunable filter arrangement with a plurality of resonators which are coupled to one another and of which there is at least one which comprises a piezoelectric component made of a ferroelectric material and to which a DC voltage source is connected. The application of a DC voltage to the resonator renders it possible to change its electrical properties and thus the overall filter characteristic. Furthermore, a transmitter, a receiver device, and a mobile telephone device with such a filter arrangement are disclosed, aswell as a tunable bulk acoustic wave resonator.

Mareike Klee

Papers

Electrode influence on the charge transport through SrTiO3 thin films

Advanced dielectrics: Bulk ceramics and thin films

Theory of conduction and breakdown in perovskite thin films

Bulk acoustic wave filter

Tunable filter arrangement comprising resonators with reflection layers