An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 10 18 /cm 3 , and a thin film transistor using such an amorphous oxide. In a thin film transistor having a source electrode 6 , a drain electrode 5 , a gate electrode 4 , a gate insulating film 3 , and a channel layer 2 , an amorphous oxide having an electron carrier concentration less than 10 18 /cm 3 is used in the channel layer 2.

Amorphous oxide and thin film transistor

A very high density field programmable memory is disclosed. An array is formed vertically above a substrate using several layers, each layer of which includes vertically fabricated memory cells. The cell in an N level array may be formed with N+1 masking steps plus masking steps needed for contacts. Maximum use of self alignment techniques minimizes photolithographic limitations. In one embodiment the peripheral circuits are formed in a silicon substrate and an N level array is fabricated above the substrate.

Vertically-stacked, field-programmable, nonvolatile memory and method of fabrication

A multi-level memory array is described employing rail-stacks. The rail-stacks include a conductor and semiconductor layers. The rail-stacks are generally separated by an insulating layer used to form antifuses. In one embodiment, one-half the diode is located in one rail-stack and the other half in the other rail-stack.

Three-dimensional memory array and method of fabrication

Three-dimensional semiconductor memory devices and methods of fabricating the same. The three-dimensional semiconductor devices include an electrode structure with sequentially-stacked electrodes disposed on a substrate, semiconductor patterns penetrating the electrode structure, and memory elements including a first pattern and a second pattern interposed between the semiconductor patterns and the electrode structure, the first pattern vertically extending to cross the electrodes and the second pattern horizontally extending to cross the semiconductor patterns.

Three dimensional semiconductor memory devices and methods of fabricating the same

There is provided a monolithic three dimensional array of charge storage devices which includes a plurality of device levels, wherein at least one surface between two successive device levels is planarized by chemical mechanical polishing.

Dense arrays and charge storage devices, and methods for making same

A nonvolatile memory array is provided. The array includes an array of nonvolatile memory devices, at least one driver circuit, and a substrate. The at least one driver circuit is not located in a bulk monocrystalline silicon substrate. The at least one driver circuit may be located in a silicon on insulator substrate or in a compound semiconductor substrate.

Nonvolatile memory on SOI and compound semiconductor substrates and method of fabrication

Delay locked loops (320, 350) for generating a predetermined phase relationship between a pair of clocks (300, 310). A first delay-locked loop (320) includes delay elements arranged in a chain, the chain receiving an input clock (300) and generating, from each delay element, a set of phase vectors (330), each shifted a unit delay from the adjacent vector. The first delay-locked loop (320) adjusts the unit delays in the delay chain using a delay adjustment signal so that the phase vectors (330) span a predetermined phase shift of the input clock (300). A second delay-locked loop (350) selects, from the first delay-locked loop (320), a pair of phase vectors which brackets the phase of an input clock (300). A phase interpolator (560) receives the selected pair of vectors and generates an output clock and a delayed output clock, the amount of the delay being controlled by the delay adjustment signal of the first delay-locked loop circuitry. A phase detector (590) compares the delayed output clock with the input clock and adjusts the phase interpolator (560), based on the phase comparison, so that the phase of the delayed output clock is in phase with the input clock (410). As a result, there is a predetermined phase relationship being the amount of delay between the output clock (640) and the delayed output clock (360).

Mark G. Johnson

Papers

Vertically-stacked, field-programmable, nonvolatile memory and method of fabrication

Three-dimensional memory array and method of fabrication

Dense arrays and charge storage devices, and methods for making same

Nonvolatile memory on SOI and compound semiconductor substrates and method of fabrication

Delay locked loop circuitry for clock delay adjustment