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Martin M. Fejer

Researcher at Stanford University

Publications -  1227
Citations -  104666

Martin M. Fejer is an academic researcher from Stanford University. The author has contributed to research in topics: Lithium niobate & Gravitational wave. The author has an hindex of 123, co-authored 1190 publications receiving 88708 citations. Previous affiliations of Martin M. Fejer include Laser Interferometer Gravitational Wave Observatory & University of Florida.

Papers
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Proceedings ArticleDOI

Improved material properties in MgO-doped near-stoichiometric LiNbO/sub 3/ for nonlinear optical applications

TL;DR: In this article, the influence of MgO doping on the green-induced infrared absorption, photorefraction, and ferroelectric domain nature in near stoichiometric LiNbO/sub 3/ and mgO doped near-stoichiometric PPLN was investigated.
Proceedings ArticleDOI

Effect of annealing on the light absorption in sapphire

TL;DR: In this article, the authors used photothermal common-path interferometry to measure optical absorption at 1064 nm and at 514 nm in high purity sapphire crystals.
Journal ArticleDOI

Elastic nonlinearity and domain wall motion in ferroelastic crystals

TL;DR: In this paper, the authors proposed a control mechanism for periodic domain gratings with nonlinear interactions between elastic waves and ferroelastic domain walls, which can be set up and electronically controlled for application as tunable diffraction gratings, acoustic wave filters and surface acoustic wave transducers.
Proceedings ArticleDOI

Guided-wave half-harmonic generation of frequency combs with ∼75-fold spectral broadening

TL;DR: In this article, a PPLN waveguide and a polarization-maintaining optical fiber were used to construct a degenerate OPO with an output frequency comb centered at 1548 nm.
Proceedings ArticleDOI

16-micron infrared generation by difference-frequency mixing in diffusion-bonded-stacked GaAs

TL;DR: In this article, low optical loss diffusion bonded stacked (DBS) GaAs have been used to generate mid-infrared radiation as long as 17 /spl mu/m using difference frequency mixing with DBS GaAs.