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Martin M. Fejer

Researcher at Stanford University

Publications -  1227
Citations -  104666

Martin M. Fejer is an academic researcher from Stanford University. The author has contributed to research in topics: Lithium niobate & Gravitational wave. The author has an hindex of 123, co-authored 1190 publications receiving 88708 citations. Previous affiliations of Martin M. Fejer include Laser Interferometer Gravitational Wave Observatory & University of Florida.

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Proceedings ArticleDOI

Ultrafast downconversion quantum interface for a single quantum dot spin and 1550-nm single-photon channel

TL;DR: In this paper, the authors reported an ultrafast downconversion quantum interface, where 910-nm single photons from a quantum dot are downconverted to the 1.5-μm telecom band with sub-10 picosecond pulses at 2.2μm, enabling the demonstration of quantum-dot spin-photon entanglement.
Proceedings Article

Long-wave infrared chemical sensing based on orientation-patterned GaAs

TL;DR: In this article, orientation-patterned GaAs are employed as part of a broadly tunable, continuous-wave, difference frequency generation (DFG) source for ultra-trace gas detection applications.
Proceedings ArticleDOI

The Development of High Reflection TiO2:GeO2 and SiO2 Coatings for Gravitational Wave Detectors

TL;DR: In this article , the effect of annealing the structural properties of multilayer coatings with 99.998% reflectivity was studied, consisting of stacks of a TiO2:GeO2 alloy and SiO2 thin films with excellent optical properties.
Proceedings ArticleDOI

Mid-IR continuum from an optical parametric generator based on orientation-patterned GaAs (OP-GaAs)

TL;DR: In this article, an optical parametric generator (OPG) based on quasi-phasematched GaAs was used to demonstrate 4.8-8.5-micron infrared continuum from an OPG with 1-ps pulses near 3.3 microns.
Journal ArticleDOI

Optical characterization of orientation-patterned GaP structures by micro reflectance difference spectroscopy

TL;DR: In this article, the optical anisotropies below and above band gap of orientation-patterned GaP structures deposited on both Si and GaP(100) vicinal substrates were measured using the reflectance anisotropy technique with microscopic resolution.