M
Martin M. Fejer
Researcher at Stanford University
Publications - 1227
Citations - 104666
Martin M. Fejer is an academic researcher from Stanford University. The author has contributed to research in topics: Lithium niobate & Gravitational wave. The author has an hindex of 123, co-authored 1190 publications receiving 88708 citations. Previous affiliations of Martin M. Fejer include Laser Interferometer Gravitational Wave Observatory & University of Florida.
Papers
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Generation of multicycle terahertz pulses via optical rectification in periodically inverted GaAs structures
TL;DR: In this article, the authors demonstrate the generation of multicycle narrowbandwidth terahertz pulses in periodically inverted GaAs structures using optical rectification of 2μm, 100fs pump pulses.
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Frequency stability at the kilohertz level of a rubidium-locked diode laser at 192.114 THz
TL;DR: The frequency stability and frequency reproducibility of a 1560-nm diode laser, whose second harmonic was locked to (87)Rb sub-Doppler lines, are better than those that can be achieved by locking to Doppler-broadened transitions at the 1550-nm wavelength band.
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Pr3+-doped fluoride glasses☆
TL;DR: In this article, a modified Judd-Ofelt treatment was used to describe the transition probabilities between Pr 3+ energy levels, including error estimates for the fitted parameters Ω, in order to compare their potential to be used as optical devices.
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Magneto-Optical Measurements of a Cascade of Transitions in Superconducting La1.875Ba0.125CuO4 Single Crystals
Hovnatan Karapetyan,Hovnatan Karapetyan,Markus Hucker,G. D. Gu,John M. Tranquada,Martin M. Fejer,Jing Xia,Aharon Kapitulnik,Aharon Kapitulnik +8 more
TL;DR: In this paper, the polar Kerr effect was used to locate the structural phase transitions from high-temperature tetragonal to low temperature orthorhombic, and then to lower temperature tetragonian, at which temperature a strong Kerr signal onsets.
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Short wavelength intersubband transitions in InGaAs/AlGaAs quantum wells grown on GaAs
TL;DR: In this article, the inter-subband transition energies in InGaAs/AlGaAs quantum wells (QWs) grown on GaAs substrates have been determined, and good agreement of the intersubband transitions to a single band effective mass model with band nonparabolicity included is found.