A photomask blank is provided comprising an etch stop film which is disposed on a transparent substrate and is resistant to fluorine dry etching and removable by chlorine dry etching, a light-shielding film disposed on the etch stop film and including at least one layer composed of a transition metal/silicon material, and an antireflective film disposed on the light-shielding film. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.

Photomask blank and photomask

A touch panel according to the embodiment includes a substrate; a first electrode formed on the substrate in a first direction and including a plurality of sensor parts and connection parts connecting the sensor parts with each other; and a second electrode formed in a second direction crossing the first direction while being insulated from the first electrode and including a plurality of sensor parts and connection parts connecting the sensor parts with each other. The sensor parts and the connection parts include transparent conductive materials, and the connection parts have resistance lower than resistance of the sensor parts in at least one of the first and second electrodes.

Touch panel and method for manufacturing the same

A light-shielding film 2 is formed on a transparent substrate 1. A hard mask film 3 is formed on this light-shielding film 2. The entire hard mask film 3 is made of a chromium-containing material including tin. The film made a chromium-containing material including tin can cause a significant increase in the etching rate at the time of chlorine-containing dry etching. Furthermore, comparing with a film made of a chromium-containing material in which part of chromium is replaced with a light element, the above film has an equal or higher level of etching resistance to fluorine-dry etching. Thus, burden on a photoresist at the time of etching the chromium-containing material film can be reduced. Therefore, high-precision pattern transfer can be performed even in the case that the resist film is thinned.

Photomask blank and method for manufacturing photomask

A light-shieldable film (12) is formed on one principal plane of an optically transparent substrate (11), and the light-shieldable film (12) has a first light-shieldable film (13) and a second light-shieldable film (14) overlying the first light-shieldablefilm (13). The first light-shieldable film (13) is a film that is not substantially etched by fluorine-based(F-based)dry etching and is primarily composed of chromium oxide, chromium nitride, chromium oxynitride or the like. The second light-shieldable film (14) is a film that is primarily composed of a silicon-containing compound that can be etched by F-based dry etching, such as silicon oxide, silicon nitride, silicon oxynitride, silicon/transition-metal oxide, silicon/transition-metal nitride or silicon/transition-metal oxynitride.

Photomask blank, photomask and fabrication method thereof

To provide a reflective mask blank for EUV lithography having an absorber layer, which presents a low reflectance to a light in the wavelength ranges of EUV light and pattern inspection light, and which is easily controlled to have desired film composition and film thickness. A reflective mask blank for EUV lithography, comprising a substrate, and a reflective layer for reflecting EUV light and an absorber layer for absorbing EUV light formed in this order on the substrate, wherein the absorber layer contains tantalum (Ta), boron (B), silicon (Si) and nitrogen (N), and in the absorber layer, the B content is at least 1 at% and less than 5 at%, the Si content is from 1 to 25 at%, and the compositional ratio of Ta to N (Ta:N) is from 8:1 to 1:1.

Reflective mask blank for euv lithography

PROBLEM TO BE SOLVED: To provide a photomask having a fine photomask pattern formed thereon with high precision, and also to provide a photomask blank for the photomask. SOLUTION: A light-shieldable film 12 is formed on one principal plane of an optically transparent substrate 11, wherein the light-shieldable film 12 comprises a first light-shieldable film 13 and a second light-shieldable film 14 successively layered. The first light-shieldable film 13 is a film that is not substantially etched by fluorine-based (F-based) dry etching and is primarily composed of chromium oxide, chromium nitride, chromium oxynitride or the like. The second light-shieldale film 14 is the film that is primarily composed of a silicon-containing compound that can be etched by F-based dry etching, such as silicon oxide, silicon nitride, silicon oxynitride, silicon/transition-metal oxide, silicon/transition metal nitride or silicon/transition metal oxynitride. The silicon-containing compound has a composition of 10 to 95 at% silicon, 0 to 60 at% oxygen, 0 to 57 at% nitrogen, and 0 to 35 at% transition metal, and the transition metal is, for example, molybdenum (Mo). COPYRIGHT: (C)2006,JPO&NCIPI

Photomask blank, photomask and method for manufacturing the same

PROBLEM TO BE SOLVED: To provide a halftone type phase shift mask on which a fine photomask pattern is formed with high accuracy, and to provide a mask blank for producing the above mask. SOLUTION: A semitransparent film 15 having a predetermined phase shift and transmittance to exposure light and a light shielding film 12 placed on the semitransparent film 15 are disposed on one principal face of a transparent substrate 11 such as quartz as a photomask substrate. The light shielding film 12 is surely a so-called "light shielding film" but it can also act as an antireflection film. The semitransparent film 15 is a halftone phase shift layer comprising a halftone material containing both of silicon (Si) and molybdenum (Mo) as an absorbent material. In order to use the halftone phase shift mask blank for producing a mask for ArF exposure, the film thickness and composition of the light shielding film 12 are selected to obtain the optical density OD of the film in the range of 1.2 to 2.3 with respect to light at 193 or 248 nm wavelength. COPYRIGHT: (C)2007,JPO&INPIT

Phase shift mask blank, phase shift mask, and method for manufacturing the same

PROBLEM TO BE SOLVED: To provide a photomask having a fine photomask pattern formed with high accuracy and to provide a photomask blank for the photomask. SOLUTION: A photomask substrate 11 has, on one principal face, a metal film as a light shielding layer 12 which can not be substantially etched by chlorine-based dry etching containing oxygen ((Cl+O)-based dry etching) but can be etched by chlorine-based dry etching containing no oxygen (Cl-based dry etching) and by fluorine-based dry etching (F-based dry etching). Further, the substrate has, on the above light shielding layer 12, a metal compound film as an antireflection layer 13 which can not be substantially etched by chlorine-based dry etching containing no oxygen (Cl-based dry etching) but can be etched by at least one of chlorine-based dry etching containing oxygen ((Cl+O)-based dry etching) and fluorine-based dry etching (F-based dry etching). COPYRIGHT: (C)2006,JPO&NCIPI

Masahide Iwakata

Papers

Photomask blank and photomask

Photomask blank, photomask and fabrication method thereof

Photomask blank, photomask and method for manufacturing the same

Phase shift mask blank, phase shift mask, and method for manufacturing the same

Photomask blank, photomask and method for manufacturing same