An object is to provide a method for manufacturing a semiconductor device, in which the number of photolithography steps can be reduced, the manufacturing process can be simplified, and manufacturing can be performed with high yield at low cost A method for manufacturing a semiconductor device includes the following steps: forming a semiconductor film; irradiating a laser beam by passing the laser beam through a photomask including a shield for shielding the laser beam; subliming a region which has been irradiated with the laser beam through a region in which the shield is not formed in the photomask in the semiconductor film; forming an island-shaped semiconductor film in such a way that a region which is not irradiated with the laser beam is not sublimed because it is a region in which the shield is formed in the photomask; forming a first electrode which is one of a source electrode and a drain electrode and a second electrode which is the other one of the source electrode and the drain electrode; forming a gate insulating film; and forming a gate electrode over the gate insulating film

Method for Manufacturing Semiconductor Device

A photomask blank is provided comprising an etch stop film which is disposed on a transparent substrate and is resistant to fluorine dry etching and removable by chlorine dry etching, a light-shielding film disposed on the etch stop film and including at least one layer composed of a transition metal/silicon material, and an antireflective film disposed on the light-shielding film. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.

Photomask blank and photomask

A touch panel according to the embodiment includes a substrate; a first electrode formed on the substrate in a first direction and including a plurality of sensor parts and connection parts connecting the sensor parts with each other; and a second electrode formed in a second direction crossing the first direction while being insulated from the first electrode and including a plurality of sensor parts and connection parts connecting the sensor parts with each other. The sensor parts and the connection parts include transparent conductive materials, and the connection parts have resistance lower than resistance of the sensor parts in at least one of the first and second electrodes.

Touch panel and method for manufacturing the same

A light-shielding film 2 is formed on a transparent substrate 1. A hard mask film 3 is formed on this light-shielding film 2. The entire hard mask film 3 is made of a chromium-containing material including tin. The film made a chromium-containing material including tin can cause a significant increase in the etching rate at the time of chlorine-containing dry etching. Furthermore, comparing with a film made of a chromium-containing material in which part of chromium is replaced with a light element, the above film has an equal or higher level of etching resistance to fluorine-dry etching. Thus, burden on a photoresist at the time of etching the chromium-containing material film can be reduced. Therefore, high-precision pattern transfer can be performed even in the case that the resist film is thinned.

Photomask blank and method for manufacturing photomask

A light-shieldable film (12) is formed on one principal plane of an optically transparent substrate (11), and the light-shieldable film (12) has a first light-shieldable film (13) and a second light-shieldable film (14) overlying the first light-shieldablefilm (13). The first light-shieldable film (13) is a film that is not substantially etched by fluorine-based(F-based)dry etching and is primarily composed of chromium oxide, chromium nitride, chromium oxynitride or the like. The second light-shieldable film (14) is a film that is primarily composed of a silicon-containing compound that can be etched by F-based dry etching, such as silicon oxide, silicon nitride, silicon oxynitride, silicon/transition-metal oxide, silicon/transition-metal nitride or silicon/transition-metal oxynitride.

Photomask blank, photomask and fabrication method thereof

PROBLEM TO BE SOLVED: To provide a photomask having a fine photomask pattern formed thereon with high precision, and also to provide a photomask blank for the photomask. SOLUTION: A light-shieldable film 12 is formed on one principal plane of an optically transparent substrate 11, wherein the light-shieldable film 12 comprises a first light-shieldable film 13 and a second light-shieldable film 14 successively layered. The first light-shieldable film 13 is a film that is not substantially etched by fluorine-based (F-based) dry etching and is primarily composed of chromium oxide, chromium nitride, chromium oxynitride or the like. The second light-shieldale film 14 is the film that is primarily composed of a silicon-containing compound that can be etched by F-based dry etching, such as silicon oxide, silicon nitride, silicon oxynitride, silicon/transition-metal oxide, silicon/transition metal nitride or silicon/transition metal oxynitride. The silicon-containing compound has a composition of 10 to 95 at% silicon, 0 to 60 at% oxygen, 0 to 57 at% nitrogen, and 0 to 35 at% transition metal, and the transition metal is, for example, molybdenum (Mo). COPYRIGHT: (C)2006,JPO&NCIPI

Photomask blank, photomask and method for manufacturing the same

PROBLEM TO BE SOLVED: To provide a halftone type phase shift mask on which a fine photomask pattern is formed with high accuracy, and to provide a mask blank for producing the above mask. SOLUTION: A semitransparent film 15 having a predetermined phase shift and transmittance to exposure light and a light shielding film 12 placed on the semitransparent film 15 are disposed on one principal face of a transparent substrate 11 such as quartz as a photomask substrate. The light shielding film 12 is surely a so-called "light shielding film" but it can also act as an antireflection film. The semitransparent film 15 is a halftone phase shift layer comprising a halftone material containing both of silicon (Si) and molybdenum (Mo) as an absorbent material. In order to use the halftone phase shift mask blank for producing a mask for ArF exposure, the film thickness and composition of the light shielding film 12 are selected to obtain the optical density OD of the film in the range of 1.2 to 2.3 with respect to light at 193 or 248 nm wavelength. COPYRIGHT: (C)2007,JPO&INPIT

Phase shift mask blank, phase shift mask, and method for manufacturing the same

A photomask blank comprises a transparent substrate, a light-shielding film deposited on the substrate and comprising a metal or metal compound susceptible to fluorine dry etching, and an etching mask film deposited on the light-shielding film and comprising another metal or metal compound resistant to fluorine dry etching. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.

Takashi Haraguchi

Papers

Photomask blank and photomask

Photomask blank, photomask and fabrication method thereof

Photomask blank, photomask and method for manufacturing the same

Phase shift mask blank, phase shift mask, and method for manufacturing the same

Photomask blank and photomask making method