Shin-Etsu Chemical

About: Shin-Etsu Chemical is a company organization based out in Tokyo, Japan. It is known for research contribution in the topics: Silicone & Layer (electronics). The organization has 4180 authors who have published 6068 publications receiving 63049 citations. The organization is also known as: Shin-Etsu Chemical Co., Ltd. & Shin'etsu Kagaku Kōgyō Kabushiki-gaisha.

A new look at density limits in tokamaks

Abstract: While the results of early work on the density limit in tokamaks from the ORMAK and DITE groups have been useful over the years, results from recent experiments and the requirements for extrapolation to future experiments have prompted a new look at this subject. There are many physical processes which limit the attainable densities in tokamak plasmas. These processes include: (1) radiation from low Z impurities, convection, charge exchange and other losses at the plasma edge; (2) radiation from low or high Z impurities in the plasma core; (3) deterioration of particle confinement in the plasma core; and (4) inadequate fuelling, often exacerbated by strong pumping by walls, limiters or divertors. Depending upon the circumstances, any of these processes may dominate and determine a density limit. In general, these mechanisms do not show the same dependence on plasma parameters. The multiplicity of processes leading to density limits with a variety of scaling has led to some confusion when comparing density limits for different machines. The authors attempt to sort out the various limits and to extend the scaling law for one of them to include the important effects of plasma shaping, i.e. ;e = k, where ne is the line average electron density (1020 m−3), κ is the plasma elongation and (MAm−2) is the average plasma current density, defined as the total current divided by the plasma cross-sectional area. In a sense, this is the most important density limit since, together with the q-limit, it yields the maximum operating density for a tokamak plasma. It is shown that this limit may be caused by a dramatic deterioration in core particle confinement occurring as the density limit boundary is approached. This mechanism can help explain the disruptions and Marfes that are associated with the density limit.

Silicone polymer, paste-like silicone composition, and w/o-type cosmetic composition comprising the same

Abstract: A silicone polymer, a paste-like silicone composition prepared by kneading the silicone polymer and a silicone oil under a shearing force, and a water-in-oil type cosmetic composition comprising the paste-like silicone composition as an oil phase component are disclosed. The silicone polymer is prepared by the addition polymerization of components comprising an organohydrogenpolysiloxane R 1 a R 2 b H c SiO.sub.(4-a-b-c)/2 (1) or R 1 f H g SiO.sub.(4-f-g)/2 (2) and a polyoxyalkylene C m H 2m-1 O(C 2 H 4 O) h (C 3 H 6 O) i C m H 2m-l (A) or an organopolysiloxane R 1 j R 4 k SiO.sub.(4-j-k)/2 (B) the components, including (1) or (A) as an essential component. The silicone polymer can swell in silicone oils and function as a viscosity increasing agent for silicone oils.

Method for manufacturing SOI substrate

Abstract: To improve bonding strength and improve reliability of an SOI substrate in bonding a semiconductor substrate and a base substrate to each other even when an insulating film containing nitrogen is used as a bonding layer, an oxide film is provided on the semiconductor substrate side, a nitrogen-containing layer is provided on the base substrate side, and the oxide film formed on the semiconductor substrate and the nitrogen-containing layer formed over the base substrate are bonded to each other. Further, plasma treatment is performed on at least one of the oxide film and the nitrogen-containing layer before bonding the oxide film formed on the semiconductor substrate and the nitrogen-containing layer formed over the base substrate to each other. Plasma treatment can be performed in a state in which a bias voltage is applied.

Resist composition and patterning process

Abstract: A resist composition is provided comprising a silicone resin, a photoacid generator, a nitrogen-containing organic compound, and a solvent. The silicone resin is obtained through cohydrolytic condensation of a mixture of three silane monomers containing an organic group having a hydroxyl group and having at least 3 fluorine atoms, in total, on a proximate carbon atom, an organic group having a carboxyl group protected with an acid labile group, and a lactone ring-bearing organic group, respectively. The resist composition has satisfactory resolution and overcomes the problem of a low selective etching ratio between resist film and organic film during oxygen reactive etching.