Showing papers by "Masahiro Hirano published in 2009"
Patent•
17 Feb 2009
TL;DR: In this article, a superconducting compound which has a structure obtained by partially substituting oxygen ions of a compound, which is represented by the following chemical formula: LnTMOPh (wherein Ln represents at least one element selected from Y and rare earth metal elements (La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu); TM represents one of the transition metal elements and Pn represents a pnictide element (N, P, As
Abstract: Disclosed is a superconducting compound which has a structure obtained by partially substituting oxygen ions of a compound, which is represented by the following chemical formula: LnTMOPh (wherein Ln represents at least one element selected from Y and rare earth metal elements (La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu); TM represents at least one element selected from transition metal elements (Fe, Ru, Os, Ni, Pd and Pt); and Pn represents at least one element selected from pnictide elements (N, P, As and Sb) and has a ZrCuSiAs-type crystal structure (space group P4/nmm), with at least one kind of monovalent anion (F-, Cl- or Br-). The superconducting compound alternatively has a structure obtained by partially substituting Ln ions of the compound with at least one kind of tetravalent metal ion (Ti4+, Zr4+, Hf4+, C4+, Si4+, Ge4+, Sn4+ or Pb4+) or a structure obtained by partially substituting Ln ions of the compound with at least one kind of divalent metal ion (Mg2+, Ca2+, Sr2+ or Ba2+). The Tc of the superconducting compound is controlled in accordance with the substitution amount of the compound.
15 citations
Patent•
27 Feb 2009
TL;DR: In this article, the authors proposed a method of manufacturing a thin-film transistor that is superior in device characteristic distribution of a TFT that uses an a-IGZO as a channel layer, and reduced a threshold voltage shift amount of a prolonged operation.
Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a thin-film transistor that is superior in device characteristic distribution of a TFT that uses an a-IGZO as a channel layer, and that reduces a threshold voltage shift amount of a prolonged operation. SOLUTION: The method of manufacturing the thin-film transistor uses an In-Ga-Zn-O system amorphous oxide semiconductor film as a channel layer, wherein after having formed the channel layer, it includes a process of doing heat treatment on an amorphous oxide product of the channel layer at a temperature of 200-500°C in a mixed atmosphere of water vapor and an oxygen gas whose dew-point temperature is controlled to be 30-95°C. COPYRIGHT: (C)2010,JPO&INPIT
14 citations
Patent•
03 Jul 2009
TL;DR: In this paper, a p-channel thin-film transistor and process for producing the transistor are described. But the p-type TFT cannot be used for a simple AM-OLED drive circuit, such that a simple TFT connected directly to an anode cannot be constructed.
Abstract: Disclosed are a p-channel thin-film transistor and process for producing the transistor, which can overcome problems in the past such that a CMOS circuit could not have been prepared with an oxide TFT due to the absence of p-type TFT and a simple AM-OLED drive circuit comprising TFT connected directly to an anode could not have been constructed. The p-channel thin-film transistor is characterized in that a thin film of stannous oxide (SnO) having a total content of Sn 4+ and Sn 0 (tin metal) of less than 10 atom% is deposited on a substrate of a thin-film transistor to form a channel layer. In a gas phase method, SnO is used as a target, and a film is formed while regulating the degree of oxidation of Sn deposited on the substrate by utilizing the temperature of the substrate and the partial pressure of oxygen in the atmosphere.
10 citations
Patent•
23 Jul 2009
TL;DR: In this article, a 12CaO-7Al 2 O 3 compound containing electrons (e − ) of ≥ 2×10 18 cm -3 and 21 cm −3 was used to provide an inorganic powder containing electrons.
Abstract: PROBLEM TO BE SOLVED: To provide a novel antioxidant comprising an inorganic powder containing electrons. SOLUTION: The antioxidant has as an effective component a 12CaO-7Al 2 O 3 compound containing electrons (e - ) of ≥2×10 18 cm -3 and 21 cm -3 . COPYRIGHT: (C)2009,JPO&INPIT
1 citations
Patent•
20 Feb 2009
TL;DR: A superconductor is a new compound composition substituting for perovskite copper oxides as mentioned in this paper, which is characterized by comprising a compound which is represented by the chemical formula A(TM) 2 Pn 2 [wherein A is at least one member selected from the elements in Group 1, Group 2, or the rare-earth metal elements.
Abstract: A superconductor which comprises a new compound composition substituting for perovskite copper oxides. The superconductor is characterized by comprising a compound which is represented by the chemical formula A(TM) 2 Pn 2 [wherein A is at least one member selected from the elements in Group 1, the elements in Group 2, or the elements in Group 3 (Sc, Y, and the rare-earth metal elements); TM is at least one member selected from the transition metal elements Fe, Ru, Os, Ni, Pd, or Pt; and Pn is at least one member selected from the elements in Group 15 (pnicogen elements)] and which has an infinite-layer crystal structure comprising (TM)Pn layers alternating with metal layers of the element (A).
Patent•
04 Dec 2009
TL;DR: In this article, an n-type semiconductor thin film is made of a tin oxide (SnO) which contains an impurity of trivalent positive ion selected from Al 3+, Ga 3+, In 3+, and Sb 3+, and the mixture powder is sintered to form an SnO target.
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor having a band gap ranging from 2 eV inclusive to below 3 eV and capable of controlling electric characteristics to both pn polarities, in order to utilize light that is not completely absorbed by the currently available thin film solar battery. SOLUTION: An n-type semiconductor thin film is made of a tin oxide (SnO) which contains an impurity of trivalent positive ion selected from Al 3+ , Ga 3+ , In 3+ , and Sb 3+ and shows n-type conductivity. This n-type semiconductor thin film and a p-type semiconductor thin film made of SnO are laminated together to form a homogeneous pn-junction element. A thin film solar battery is manufactured by using the homogeneous pn-junction element. Oxide powder, which is a source for a trivalent positive ion selected from Al 3+ , Ga 3+ , In 3+ , and Sb 3+ , is added/mixed to SnO powder, and the mixture powder is sintered to form an SnO target. Using this SnO target, the n-type semiconductor thin film made of SnO is manufactured by a physical deposition method. A p-type SnO thin film formed using an SnO target made by sintering SnO powder by the physical deposition method and an n-type SnO thin film manufactured by the same method are laminated together to manufacture the homogeneous pn-junction element. COPYRIGHT: (C)2011,JPO&INPIT
Patent•
09 Jul 2009
TL;DR: In this paper, a compositional feuillete is converted to a supraconducteur en etant dope par des cations trivalent specifiques ou des anions divalents specifique.
Abstract: L'invention porte sur un nouveau supraconducteur forme d'un compose non-oxyde, qui est une alternative aux supraconducteurs oxydes de cuivre perovskite. Un compose feuillete qui est represente par la formule chimique suivante : AF(TM)Pn (dans laquelle A represente au moins un element du groupe 2 du tableau periodique sous sa forme longue, F represente un ion fluor, TM represente au moins un element metal de transition choisi parmi Fe, Ru, Os, Ni, Pd et Pt, et Pn represente au moins un element du groupe 15 du tableau periodique sous sa forme longue), tout en ayant une structure cristalline de type ZrCuSiAs (groupe spacial P4/nmm). Le compose feuillete est converti en un supraconducteur en etant dope par des cations trivalents specifiques ou des anions divalents specifiques.