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Yoshinao Kumagai
Researcher at Tokyo University of Agriculture and Technology
Publications - 276
Citations - 7262
Yoshinao Kumagai is an academic researcher from Tokyo University of Agriculture and Technology. The author has contributed to research in topics: Epitaxy & Layer (electronics). The author has an hindex of 37, co-authored 264 publications receiving 5833 citations. Previous affiliations of Yoshinao Kumagai include Dr Emilio B Espinosa Sr Memorial State College of Agriculture and Technology & Nagoya University.
Papers
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Journal ArticleDOI
Recent progress in Ga2O3 power devices
Masataka Higashiwaki,Kohei Sasaki,Hisashi Murakami,Yoshinao Kumagai,Akinori Koukitu,Akito Kuramata,Takekazu Masui,Shigenobu Yamakoshi +7 more
TL;DR: In this article, a review article on the current status and future prospects of the research and development on gallium oxide (Ga2O3) power devices is presented, covering single-crystal bulk and wafer production, homoepitaxial thin film growth by molecular beam epitaxy and halide vapor phase epitaxy.
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1-kV vertical Ga2O3 field-plated Schottky barrier diodes
Keita Konishi,Ken Goto,Hisashi Murakami,Yoshinao Kumagai,Akito Kuramata,Shigenobu Yamakoshi,Masataka Higashiwaki +6 more
TL;DR: In this paper, field-plated Schottky barrier diodes (FP-SBDs) were fabricated on a Si-doped n−-Ga2O3 drift layer grown by halide vapor phase epitaxy on a Sn-Doped n+-Ga 2O3 (001) substrate.
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Preparation of Large Freestanding GaN Substrates by Hydride Vapor Phase Epitaxy Using GaAs as a Starting Substrate
Kensaku Motoki,Takuji Okahisa,Naoki Matsumoto,Masato Matsushima,Hiroya Kimura,Hitoshi Kasai,Kikurou Takemoto,Koji Uematsu,Tetsuya Hirano,Masahiro Nakayama,Seiji Nakahata,Masaki Ueno,Daijirou Hara,Yoshinao Kumagai,Akinori Koukitu,Hisashi Seki +15 more
TL;DR: In this paper, a freestanding GaN substrate over 2 inches in size was successfully prepared for the first time by hydride vapor phase epitaxy (HVPE) using GaAs as a starting substrate.
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Homoepitaxial growth of β-Ga2O3 layers by halide vapor phase epitaxy
Hisashi Murakami,Kazushiro Nomura,Ken Goto,Kohei Sasaki,Katsuaki Kawara,Quang Tu Thieu,Rie Togashi,Yoshinao Kumagai,Masataka Higashiwaki,Akito Kuramata,Shigenobu Yamakoshi,Bo Monemar,Bo Monemar,Akinori Koukitu +13 more
TL;DR: In this article, high-purity β-Ga2O3 layers of high crystalline quality were grown homoepitaxially by halide vapor phase epitaxy (HVPE) using gaseous GaCl and O2 on (001) and (002) substrates prepared by edge defined film-fed growth.
Journal ArticleDOI
Temperature-dependent capacitance–voltage and current–voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on n––Ga2O3 drift layers grown by halide vapor phase epitaxy
Masataka Higashiwaki,Keita Konishi,Kohei Sasaki,Ken Goto,Kazushiro Nomura,Kazushiro Nomura,Quang Tu Thieu,Rie Togashi,Hisashi Murakami,Yoshinao Kumagai,Bo Monemar,Bo Monemar,Akinori Koukitu,Akito Kuramata,Shigenobu Yamakoshi +14 more
TL;DR: In this paper, the temperature-dependent electrical properties of Pt/Ga2O3 Schottky barrier diodes (SBDs) fabricated on n−-Ga 2O3 drift layers grown on single-crystal n+-G 2O 3 (001) substrates by halide vapor phase epitaxy were investigated.